Back to Research Projects

Biological Synthesis of Nanostructured Metal Oxide Semiconductors

Current Support: NSF Nanoscale Exploratory Research (list of 2002 projects)
Graduate Students: Clayton Jeffyres (M.S. candidate), Shu-hong Liu (M.S. candidate)
Collaborators: Chih-hung Chang, Department of Chemical Engineering, Oregon State University (Chang Research Group homepage)

Project Description:  Diatoms, a class of single-celled algae, possess elaborately patterned exoskeletons made of silica.  These organisms have the ability to actively take up soluble silicon from water, polymerize soluble silicon into solid silica nanospheres, and then assemble these nanospheres into intricate microstructures. 

We are harnessing the biochemical machinery of the diatom cell to biologically fabricate nanostructured silicon-germanium oxide semiconductor materials.  These materials may contain novel nanostructures possessing unique optoelectronic properties, and could inspire the development of new microelectronic devices and thin-film displays. Current technologies for nanostructured Si-Ge materials synthesis require exotic, high temperature processes such as molecular beam epitaxy, laser ablation, and DC magnetron sputtering.  In contrast, biofabrication is a simple, environmentally benign, room-temperature process.

 

We use a two-stage photobioreactor cultivation process to make nanostructured Si-Ge oxide materials.  In the first stage, the diatom cell suspension is grown up on soluble silicon to the point of silicon starvation.  In the second stage, liquid medium containing a mixture of soluble germanium and silicon is perfused into the culture suspension. Ge and Si are taken into the cells by a “surge uptake” mechanism and processed into nanocomposite materials.  The composition and structure of these materials can be externally manipulated by changing the medium perfusion conditions.

The figures below highlight the nanostructure of the biologically fabricated Si-Ge oxide materials.  Here, the diatom cell mass was harvested, thermally annealed in air at 800 oC to remove organic materials, and then mechanically ground to a powder.  This powder was profiled by scanning electron microscopy (STEM) combined with electron dispersive X-ray (EDS) elemental analysis.   The EDS line scan reveals periodic structure of Si and Ge at the 10-100 nm scale.