PUBLICATIONS
1. J. F. Wager and C.
W. Wilmsen, "The Deposited Insulator/III-V Semiconductor Interface," a chapter
in Physics and Chemistry of III-V Compound Semiconductor Interfaces, Plenum, C.
W. Wilmsen, Editor (1985).
2. Atomic and
Molecular Processing of Electronic and Ceramic Materials, Proceedings of the
Conference held August 30-September 2, 1987, University of Washington, Seattle,
Washington, MRS, I. A. Aksay, G. L. McVay, T. G. Stoebe, and J. F. Wager,
Editors (1987).
3. J. F. Wager and P.
D. Keir, "Electrical Characterization of Thin-Film Electroluminescent Devices,"
Annual Review of Materials Science 27, 228 (1997).
4. J. C. Hitt, J. P.
Bender, and, J. F. Wager, "Thin-Film Electroluminescent Device Physics
Modeling," CRC Reviews in Solid State and Materials Sciences 25, 29
(2000).
5.
B. A. Baukol, P. D. Keir, B. A. Cleary,
C. A. Nevers, T. K. Plant, and J. F. Wager, “Electro-Optic Characterization
of Thin-Film Electroluminescent Devices,” Handbook of Luminescence and Display
Materials and Devices, edited by B. R. Vaddi and H. S. Nalwa, American Scientific
Publishers, (2002).
1. J. F. Wager and C.
W. Wilmsen, "Auger Analysis of Ultrathin Si02 Layers on Silicon," Journal of
Applied Physics 50, 874 (1979).
2. J. Shewchun, J.
DuBow, C. W. Wilmsen, R. Singh, D. Burk, and J. F. Wager, "Operation of the
Semiconductor-Insulator-Semiconductor Solar Cell: Experiment," Journal of
Applied Physics 50, 2832 (1979).
3. J. F. Wager and C.
W. Wilmsen, "Detection of SiO2 at the Indium Tin Oxide/Si Solar Cell Interface,"
Journal of Applied Physics 50, 4172 (1979).
4. C. W. Wilmsen, R.
W. Kee, J. F. Wager, J. Stannard, and L. Messick, "Deposited Insulator
Layer/GaAs and InP Interface Formation," Thin Solid Films 64, 49
(1979).
5. H. Birey, S. J.
Pak, J. R. Sites, and J. F. Wager, "Ion Beam Sputtered Al0xNy Encapsulating
Films," J. Vac. Sci. Technol. 16, 2086, (1979).
6. S. M. Goodnick, J.
F. Wager, and C. W. Wilmsen, "Thermal Degradation of Indium-Tin-Oxide/p-Silicon
Solar Cells," J. Appl. Phys. 51, 527 (1980).
7. J. F. Wager and C.
W. Wilmsen, "Thermal Oxidation of InP," J. Appl. Phys. 51, 812
(1980).
8. J. F. Wager and C.
W. Wilmsen, "Si02/InP Interface Formation: Thermodynamic Consid-erations," J.
Vac. Sci. Technol. 17, 800 (1980).
9. J. F. Wager, D. L.
Ellsworth, S. M. Goodnick, and C. W. Wilmsen, "Composition and Thermal Stability
of Thin Native Oxides on InP," J. Vac. Sci. Technol. 19, 513
(1981).
10. J. F. Wager and C. W. Wilmsen, "The
Plasma-Enhanced CVD Si02/InP Interface," J. Vac. Sci. Technol. 53, 5789
(1982).
11. J. F. Wager, W. H. Makky, C. W. Wilmsen, and L.
G. Meiners, "Oxidation of InP in a Plasma-Enhanced Chemical Vapor Deposition
Reactor," Thin Solid Films 95, 343 (1982).
12. J. F. Wager, C. W. Wilmsen, and L. L. Kazmerski,
"Estimation of the Bandgap of InPO4," Appl. Phys. Lett. 42, 589
(1983).
13. J. F. Wager, O. Jamjoum, and L. L. Kazmerski,
"The CdS/CuInSe2 Solar Cell Interface: Thermodynamic Considerations," Solar
Cells 9, 159 (1983).
14. J. F. Wager, K. M. Geib, C. W. Wilmsen, and L. L.
Kazmerski, "Native Oxide Formation and Electrical Instabilities at the
Insulator/InP Interface," J. Vac. Sci. Technol. B1, 778
(1983).
15. C. W. Wilmsen, J. F. Wager, K. M. Geib, T. Hwang,
and M. Fathipour, "Traps at the Depo-sited Insulator-InP Interface: A Discussion
of a Possible Cause," Thin Solid Films 103, 47 (1983).
16. L. L. Kazmerski, I. Jamjoum, J. F. Wager, P. J.
Ireland, and K. J. Bachmann, "Summary Abstract: Oxidation of CuInSe2," J. Vac.
Sci. Technol. A1, 668 (1983).
17. P. J. Ireland, O. Jamjoum, L. L. Kazmerski, R. K.
Ahrenkiel, P. E. Russell, W. Stanchina, and J. F. Wager, "Surface and Interface
Analysis of GaAs-oxyfluorides," J. Vac. Sci. Technol. A1, 653
(1983).
18. J. F. Wager, M. D. Clark, and R. A. Jullens,
"Si02/InP Interfaces with Reduced Interface State Density," J. Vac. Sci.
Technol. B2, 584 (1984).
19. K. M. Geib, S. M. Goodnick, D. Y. Lin, R. G.
Gann, C. W. Wilmsen, and J. F. Wager, "Influence of Interfacial Structure of the
Electronic Properties of Si02/InP," J. Vac. Sci. Technol. B2, 516
(1984).
20. J. F. Wager and D. R. Rhiger, "Surface
Characterization of HgCdTe Native Oxides," J. Vac. Sci. Technol. A3, 212
(1985).
21. J. A. Van Vechten and J. F. Wager, "Consequences
of Anion Vacancy Nearest Neighbor Hopping in III-V Compound Semiconductors;
Drift in InP MISFET's," J. Appl. Phys. 57, 1956 (1985).
22. Z. Liliental, O. Krivanek, J. F. Wager, and S. M.
Goodnick, "The Structure of the InP/SiO2 Interface," Appl. Phys. Lett. 46, 889
(1985).
23. O. Krivanek, Z. Liliental, J. F. Wager, R. G.
Gann, S. M. Goodnick, and C. W. Wilmsen, "A Combined HREM, XPS, and Electrical
Properties Study of the InP-SiO2 Interface," J. Vac. Sci. Technol. B3, 1081
(1985).
24. J. F. Wager and J. A. Van Vechten, "An Atomic
Model for the M Center in InP," Phys. Rev. B32, 5251
(1985).
25. J. A. Van Vechten and J. F. Wager, "Asymmetry of
Anion and Cation Vacancy Migration Enthalpies in III-V Semiconductors; Role of
Kinetic Energy," Phys. Rev. B32, 5259 (1985).
26. B. Rastegar and J. F. Wager, "Surface
Recombination Velocity and Bulk Lifetime in GaAs and InP," Semicond. Sci.
Technol. 1, 207 (1986).
27. J. F. Wager, S. J. T. Owen, and S. J. Prasad,
"InP MISFET Technology," J. Electrochem. Soc. 134, 160
(1987).
28. J. F. Wager and J. A. Van Vechten, "Atomic Model
for EL2 in GaAs," Phys. Rev. B35, 2330 (1987).
29. J. F. Wager and A. J. McCamant, "GaAs MESFET
Interface Considerations," IEEE Trans. Electron Devices ED-34, 1001
(1987).
30. J. F. Wager and J. A. Van Vechten, "Atomic Model
for the ELO Defect in GaAs," J. Appl. Phys. 62, 4192
(1987).
31. M. T. Juang, J. F. Wager, and J. A. Van Vechten,
"Phosphorous Vacancy Nearest-Neighbor Hopping Induced Instabilities in InP
Capacitors," J. Electrochem. Soc. 135, 2019 (1987).
32. M. T. Juang, J. F. Wager, and J. A. Van Vechten,
"Phosphorous Vacancy Nearest-Neighbor Hopping Induced Instabilities in InP
Capacitors, Part II: Computer Simulation," J. Electrochem. Soc. 135, 2023
(1987).
33. J. F. Wager and J. A. Van Vechten, "Reply to
"Comment on 'Atomic Model for the EL2 Defect in GaAs,'" Phys. Rev. B38, 10956
(1988).
34. S. B. Kim and J. F. Wager, "Electroluminescence
in Diamond-Like Carbon Films," Appl. Phys. Lett. 53, 1880
(1988).
35. T. W. Dobson, J. F. Wager, and J. A. Van Vechten,
"Entropy of Migration for Atomic Hopping," Phys. Rev. B40, 2962
(1989).
36. J. F. Wager and J. A. Van Vechten, "Reply to
"Comment on 'Atomic Model for the EL2 Defect in GaAs,'" Phys. Rev. B39, 1967
(1989).
37. A. J. Nelson, D. K. Benson, C. E. Tracy, L. L.
Kazmerski, and J. F. Wager, "Electron Energy-Loss Spectroscopy Analysis of
Low-Temperature Plasma-Enhanced Chemically Vapor Deposited a-C:H Films," J. Vac.
Sci. Technol. A7, 1350 (1989).
38. T. W. Dobson and J. F. Wager, "Enthalpy of
Formation of Antisite Defects and Antistructure Pairs in III-V Compound
Semiconductors," J. Appl. Phys. 66, 1997 (1989).
39. T. W. Dobson, L. V. A. Scalvi, and J. F. Wager,
"Transient Decay of Persistent Photoconductivity in Al0.3Ga0.7As," J. Appl.
Phys. 68, 601 (1990).
40. R. C. McArthur, J. D. Davidson, J. F. Wager, I.
Khormaei, and C.N. King, "Capacitance-Voltage Characteristics of AC Thin Film
Electroluminescent Devices," Appl. Phys. Lett. 56, 1889
(1990).
41. S. B. Kim, J. F. Wager, and D. C. Morton, "Short
Wavelength Electroluminescence in Diamond-Like Carbon Thin Films," Thin Solid
Films 189, 45 (1990).
42. S. B. Kim, J. F. Wager, and D. C. Morton,
"Diamond-Like Carbon for Electroluminescent Applications," Surface and Coatings
Technology 43/44, 99 (1990).
43. J. F. Wager, "A Statistical Thermodynamic
Derivation of the Ballistic Model for Vacancy Migration," Phil. Mag. A 63, 1315
(1991).
44. J. F. Wager, "Energetics of Self-Diffusion in
GaAs," J. Appl. Phys. 69, 3022 (1991).
45. J. D. Davidson, J. F. Wager, I. Khormaei, C. N.
King, and R. Williams, "Electrical Characterization and Modeling of
Alternating-Current Thin-Film Electroluminescent Devices," IEEE Trans. Electron
Devices ED-39, 1122 (1992).
46. J. D. Davidson, J. F. Wager, and S. Kobayashi,
"Aging Studies of ZnS:Mn Alternating-Current Thin-Film Electroluminescent
Devices," J. Appl. Phys. 71, 4040 (1992).
47. J. F. Wager, "Thermodynamics and Kinetics of
Vacancy Self-Compensation in Wide Band Gap Semiconductors," Phil. Mag. A 67, 897
(1993).
48. A. A. Douglas, J. F. Wager, D. C. Morton, J.B.
Koh, and C.P. Hogh, "Evidence for Space Charge in Atomic Layer Epitaxy ZnS:Mn
Alternating-Current Thin-Film Electroluminescent Devices," J. Appl. Phys. 73,
293 (1993).
49. A. Abu-Dayah, S. Kobayashi, and J. F. Wager,
"Internal Charge-Phosphor Field Characteristics of Alternating-Current Thin-Film
Electroluminescent Devices," Appl. Phys. Lett. 62, 744
(1993).
50. K. Bhattacharyya, S. M. Goodnick, and J. F.
Wager, "Monte Carlo Simulation of Electron Transport in Alternating-Current
Thin-Film Electroluminescent Devices," J. Appl. Phys. 73, 3390
(1993).
51. A. A. Douglas, J. F. Wager, D. C. Morton, J. B.
Koh, and C. P. Hogh, "Hot Electron Luminescence in ZnS Alternating-Current
Thin-Film Electroluminescent Devices," Appl. Phys. Lett. 63, 231
(1993).
52. A. Abu-Dayah, J. F. Wager, and S. Kobayashi,
"Electrical Characterization of Atomic Layer Epitaxy ZnS:Mn Alternating-Current
Thin-Film Electroluminescent Devices Subject to Various Waveforms," J. Appl.
Phys. 74, 5575 (1993).
53. A. Abu-Dayah and J. F. Wager, "Aging Studies of
Atomic Layer Epitaxy ZnS:Mn Alternating-Current Thin-Film Electroluminescent
Devices," J. Appl. Phys. 75, 3593 (1994).
54. S. Lim, J. H. Ryu, J. F. Wager, and T. K. Plant,
"Rugate Filters Grown by Plasma-Enhanced Chemical Vapor Deposition," Thin Solid
Films 245, 141 (1994).
55. S. Lim, J. H. Ryu, J. F. Wager, and L. M. Casas,
"Inhomogeneous Dielectrics Grown by Plasma-Enhanced Chemical Vapor Deposition,"
Thin Solid Films 236, 64, 1994.
56. J. H. Ryu, S. Lim, and J. F. Wager,
"Alternating-Current Thin-Film Electroluminescent Devices with Multiple
Dielectric Layers," Thin Solid
Films 248, 63, 1994.
57. W. M. Ang, S. Pennathur, L. Pham, J. F. Wager, S.
M. Goodnick, and A. A. Douglas, "Evidence for Band-to-Band Impact Ionization in
Evaporated ZnS:Mn Alternating-Current Thin-Film Electroluminescent Devices," J.
Appl. Phys. 77, 2719 (1995).
58. K. Streicher, T. K. Plant, and J. F. Wager, "Hot
Electron Impact Excitation of ZnS:Tb Alternating-Current Thin-Film
Electroluminescent Devices," J. Appl. Phys. 78, 2101
(1995).
59. P. D. Keir, W.M. Ang, and J.F. Wager, "Modeling
Space Charge in Alternating-Current Thin-Film Electroluminescent Devices using a
Single Sheet Charge Model," J. Appl. Phys. 78, 4668
(1995).
60. S. Shih, P. D. Keir, and J. F. Wager, J. Viljanen
"Space Charge Generation in Atomic Layer Epitaxy ZnS:Mn Alternating-Current
Thin-Film Electroluminescent Devices with Varying Phosphor Layer Thickness,", J.
Appl. Phys. 78, 5775 (1995).
61. S. Lim, S. Shih, and J. F. Wager, "Design and
Fabrication of a Double Bandstop Rugate Filter Grown by Plasma-Enhanced Chemical
Vapor Deposition," Thin Solid Films 277, 144 (1996).
62. S. Shih, P. D. Keir, J. Hitt, and J. F. Wager,
"On the Nature of Offset of the Charge-Voltage or Internal Charge-Phosphor Field
Characteristics of Alternating-Current Thin-Film Electroluminescent Devices ",
Appl. Phys. Lett. 69, 1921 (1996).
63. P. D. Keir, H. Le, R. L. Thuemler, J. Hitt, and
J. F. Wager, "Relaxation Charge Anomalies in the Charge-Voltage Characteristics
of Alternating-Current Thin-Film Electroluminescent Devices ", Appl. Phys.
Lett. 69, 2421
(1996).
64. M. Reigrotzki, R. Redmer, I. Lee, S. S.
Pennathur, J. F. Wager, S. M. Goodnick, P. Vogl, H. Eckstein, and W. Schattke,
"Impact Ionization Rate and High Field Transport in ZnS with Nonlocal Band
Structure," J. Appl. Phys. 80, 5054 (1996).
65. K. Lite, R. L. Thuemler, T. K. Plant, J. F.
Wager, D. C. Morton, S. S. Sun, and R. H. Mauch, "Vacuum Ultraviolet
Reflectivity Measurements of Thin-Film Electroluminescent Phosphors," Appl.
Phys. Lett. 69, 3525 (1996).
66. I. Lee, S. Pennathur, S.M. Goodnick and J.F.
Wager, "Band Structure and High-Field Transport of a ZnS Phosphor in AC
Thin-Film Electroluminescent Devices," J. Korean Phys. Soc. 31, 517
(1997).
67. R. Myers and J. F. Wager, "Transferred Charge
Analysis of Evaporated ZnS:Mn Alternating-Current Thin-Film Electroluminescent
Devices," J. Appl. Phys. 81, 506
(1997).
68. J. C. Hitt, J. F. Wager, and S. S. Sun, "Static
Space Charge in Evaporated ZnS:Mn Alternating-Current Thin-Film
Electroluminescent Devices," J. Appl. Phys. 83, 1141
(1998).
69. M. Dur, S. M. Goodnick, S. Pennathur, J. F.
Wager, M. Reigrotzki, and R. Redmer, "High-Field Transport and
Electroluminescence in ZnS Phosphor Layers," J. Appl. Phys. 83, 3176
(1998).
70. J. F. Wager, Book Review, “The Mathematica
Handbook,” Materials Research Bulletin 33, 1726 (1998).
71. P. D. Keir, J. F. Wager, B. L. Clark, D. Li, and
D. A. Keszler, "Alkali Metal Coactivators in SrS:Cu,F Thin-Film
Electroluminescent Devices," Appl. Phys. Lett. 75, 1398
(1999).
72. P. D. Keir, C. Maddix, B. A. Baukol, J. F. Wager,
B. L. Clark, and D. A. Keszler, "Lanthanide Doping in ZnS and SrS Thin-Film
Electroluminescent Devices," J. Appl. Phys. 86, 6810
(1999).
73. A. S. Grudzinsky, P. D. Keir, and J. F. Wager,
“Simulations of SrS:Ce ACTFEL Devices Using a Two-Sheet Space Charge Model,”
Display and Imaging 8, 61 (1999).
74. B. A. Baukol, J. C. Hitt, P. D. Keir, and J. F.
Wager, “Electroluminescence Thermal Quenching in Thin-Film Electroluminescent
Devices," Appl. Phys. Lett. 76, 185 (2000).
75. D. Li, B. L. Clark, D. A. Keszler, P. D. Keir and
J. F. Wager, “Color Control in Sulfide Phosphors; Tuning Up the Light for
Electroluminescent Displays," Chem. Mater. 12, 268 (2000).
76. J. P. Bender and J. F. Wager,
"Alternating-Current Thin-Film Electroluminescent Device Modeling via SPICE
Fowler-Nordheim Diode,” IEEE Trans. Electron Devices ED-47, 1113
(2000).
77. B. A. Cleary, J.C. Hitt, P. D. Keir, T.K. Plant, J. F. Wager, and S. S. Sun, "Photo-Induced Charge and Luminescence Measurements of Evaporated ZnS:Mn Alternating-Current Thin-Film Electroluminescent Devices," J. SID Suppl. 1, 51 (2000).
78. S. S. Lee, S.
Lim, S. Sun, and J. F. Wager, “A New CaSiN2 Phosphor for Thin-Film
Electroluminescent Device Application,” J.
SID Suppl. 1, 51 (2000).
79. B. J. Norris and J. F. Wager, “Transient
Brightness, Current, and Voltage Characterization of Organic Light Emitting
Devices,” J. Vac. Sci. Technol. B 19, 546
(2001).
80. B. A. Baukol, J. C. Hitt, J. F. Wager, and S.-S.
Sun, “Electroluminescence Thermal Quenching in Alternating-Current Thin-Film
Electroluminescent Devices," J. Appl. Phys. 90, 2185
(2001).
81. J. C. Hitt and J. F. Wager, “Insulator Issues in
Alternating-Current Thin-Film Electroluminescent Devices," J. Appl. Phys. 90,
2711 (2001).
82. R. L. Hoffman, J. F. Wager, M. K. Jayaraj, and J.
Tate, “Electrical Characterization of Transparent p-i-n Heterojunction Diodes,"
J. Appl. Phys. (submitted).
83. B. A. Cleary, P. D. Keir, J. C. Hitt, T. K.
Plant, J. F. Wager, B. Aitchison, R. T. Tuenge, and S. S. Sun, "Subthreshold
Voltage-Induced Transferred Charge Measurements of Evaporated ZnS:Mn
Alternating-Current Thin-Film Electroluminescent Devices," J. Soc. Info. Display
(submitted).
84. B. J. Norris, J. P. Bender, and J. F. Wager,
“Steady-State Transient-Current-Transient Voltage Characterization of OLEDs,” J.
Soc. Info. Display (submitted).
85. J. P. Bender, B. J. Norris, and J. F. Wager,
“OLED Modeling via SPICE," J. Soc. Info. Display
(submitted).
86. J. F. Wager, J. C. Hitt, B. A. Baukol, J. P.
Bender, and D. A. Keszler, “Luminescent Impurity Doping Trends in
Alternating-Current Thin-Film Electroluminescent Phosphors," J. Lumin.
(submitted)
1. J. F. Wager and C.
W. Wilmsen, "Auger Analysis of the Si02/Si Interface of Ultra thin Oxides," in
The Physics of Si02 and Its Interfaces, S. T. Pantelides, Ed. Pergamon Press,
New York, 373 (1978).
2. J. DuBow, G. Cheek,
A. P. Genis, C. W. Wilmsen, J. F. Wager, and J. Shewchun, "Influence of the
Interface Upon the Properties of ITO/Silicon SIS Solar Cells," Conference Record
13th IEEE Photovoltaic Specialists Conference, 767 (1978).
3. S. M. Goodnick, J.
F. Wager, and C. W. Wilmsen, "Degradation of ITO/p-Silicon Solar Cells,"
Conference Record 14th IEEE Photovoltaic Specialists Conference, 1175
(1980).
4. C. W. Wilmsen, J.
F. Wager, and J. Stannard, "CVD Si02/InP Interface," Inst. Phys.
Conf. Ser. No. 50, 251 (1980).
5. J. F. Wager and J.
A. Van Vechten, "Identification of M Centers in InP," Mat. Res. Soc. Proc. 46,
325 (1985).
6. J. F. Wager,
"Electrical Characterization of MIS Interfaces," SPIE Vol. 623 Advanced
Processing and Characterization of Semiconductors III, 45
(1986).
7. M. T. Juang, J. F.
Wager, and J. A. Van Vechten, "Phosphorous Vacancy Nearest-Neighbor Hopping
Instabilities in InP Capacitors," in Dielectric Films on Compound Semiconductors
(1987).
8. S. B. Kim and J. F.
Wager, "Diamond-Like Carbon Films Prepared by Plasma-Enhanced Chemical Vapor
Deposition," in Atomic and Molecular Processing of Electronic and Ceramic
Materials, I.A. Asay, G.L. McVay, T.G. Stoebe, and J.F. Wager, Editors, 53
(1987).
9. T. W. Dobson, J. F.
Wager, and J. A. Van Vechten, "Entropy of Atomic Hopping in Diffusion and Defect
Transformations," Mat. Res. Soc. Proc. (1988).
10. I. Khormaei, J. F. Wager, and C. N. King,
"Improved Stability of ZnS:Mn ACTFEL Devices," SID89 Digest, 65
(1989).
11. T. W. Dobson and J. F. Wager, "Experimental
Confirmation of the Donor-Like Nature of DX in AlGaAs," Mat. Res. Soc. Symp.
Proc. 148, 445 (1989).
12. R. C. McArthur, J. D. Davidson, J. F. Wager, I.
Khormaei, and C. N. King, "Characterization of ZnS:Mn AC Thin-Film
Electroluminescent Devices by Capacitance-Voltage Analysis," Acta Polytechnica
Scandinavia Ph 170, 181 (1990).
13. J. D. Davidson, J. F. Wager, I. Khormaei, and C.
N. King, "Aging Instabilities of ZnS:Mn AC Thin-Film Electroluminescent
Devices," Acta Polytechnica Scandinavia Ph 170, 185
(1990).
14. J. D. Davidson, I. Khormaei, and J. F. Wager,
"Electrical Characterization and SPICE Modeling of ZnS:Mn ACTFEL Devices," SID91
Digest, 77 (1991).
15. I. Khormaei, C. N. King, R. E. Coovert, and J. F.
Wager, "Stabilization of ZnS:Mn ACTFEL Devices Through Processing
Modifications," SID91 Digest, 74 (1991).
16. L. V. A. Scalvi and J.F. Wager, "The Transient
Decay of Persistent Photoconductivity in AlxGa1-xAs: Measurements and
Simulations," 5th Brazilian School on Semiconductor Physics, J.R. Leite, A.
Fazzio, and A.S. Chaves, Editors, 287 (1991).
17. J. F. Wager, A. A. Douglas, and D. C. Morton,
"Electrical Characterization and Modeling of ACTFEL Devices,"
Electroluminescence, edited by V.P. Singh and J.C. McClure (Cinco Puntos Press,
El Paso), p. 92, (1992).
18. A. A. Douglas and J. F. Wager, "Electrical
Characterization and Modeling of ZnS:Mn ACTFEL Devices with Various Pulse
Waveforms," SID 92 Digest, 356 (1992).
19. K. Bhattacharyya, S. M. Goodnick, and J. F.
Wager, "Monte Carlo Simulation of High Field Electron Transport in
Alternating-Current Thin-Film Electroluminescent Devices," Electro-luminescence,
edited by V.P. Singh and J.C. McClure (Cinco Puntos Press, El Paso), p. 54,
(1992).
20. S. Kobayashi, A. Abu-Dayah, and J. F. Wager,
"Distribution of Trapped Electrons at Interface States in ACTFEL Devices,"
Electroluminescence, edited by V.P. Singh and J.C. McClure (Cinco Puntos Press,
El Paso), p. 234, (1992).
21. A. A. Douglas and J. F. Wager, "ACTFEL Device
Response to Systematically Varied Pulse Waveforms," Electroluminescence, edited
by V.P. Singh and J.C. McClure (Cinco Puntos Press, El Paso), p. 387,
(1992).
22. L. V. A. Scalvi and J. F. Wager, The Energy
Barrier for Electron Trapping in AlxGa1-xAs," Proc. 6th Brazilian School on
Semiconductor Physics, Sao Paulo, Brazil, 1992.
23. A. Abu-Dayah, J. F. Wager, and S. Kobayashi,
"Electrical Characterization of ALE ZnS:Mn ACTFEL Devices," SID 93 Digest, 581
(1993).
24. A. A. Douglas, J. F. Wager, K. Bhattacharyya, S.
M. Goodnick, D. C. Morton, J. B. Koh, and C. P. Hogh, "Hot Electron Luminescence
in ZnS ACTFEL Devices," SID 93 Digest, p. 851 (1993).
25. S. Lim, J. H. Ryu, and J. F. Wager,
"Inhomogeneous Dielectrics Grown by Plasma-Enhanced Chemical Vapor Deposition,"
International Conference on Metallurgical Coatings and Thin Films
(1992).
26. L. V. Pham, J. F. Wager, S. S. Sun, E. Dickey, R.
T. Tuenge, and C. N. King, "Electrical Characterization of Blue
Electroluminescent Devices," IS&T/SPIE Symposium on Electronic Imaging
Science & Technology, February 6-10, 1994, San Jose, CA, SPIE Vol. 2174, p.
190 (1994).
27. S. Pennathur, K. Bhattacharyya, J. F. Wager and
S. M. Goodnick, "Fullband Ensemble Monte Carlo Modeling Of High-Field Transport
in the ZnS Phosphor of AC Thin Film Electroluminescent Devices", Proceedings of
the Third International Workshop on Computational Electronics, edited by S.M.
Goodnick, 288-291 (1994).
28. J. F. Wager, W. M. Ang, S. Pennathur, L. Pham, S.
M. Goodnick, and A. A. Douglas, "Impact Ionization in Evaporated ZnS:Mn
Alternating-Current Thin-Film Electroluminescent Devices", International
Symposium on Inorganic and Organic Luminescence, October 5-6, 1994, Hamamatsu,
Japan.
29. J. F. Wager, "A Comparison of ZnS:Mn ACTFEL
Devices Prepared by Evaporation and Atomic Layer Epitaxy", Proceedings of the
1994 International Workshop on Electroluminescence, edited by Xurong Xu (Science
Press, Beijing), p. 49 (1994).
30. S. Lim, B.H. Chang, J. F. Wager, and M. H. Oh
"Electrical Characterization of Sr(S,Se):Ce, Cl Alternating-Current Thin-Film
Electroluminescent Devices," Proceedings of the 1994 International Workshop on
Electroluminescence, edited by Xurong Xu (Science Press, Beijing), p. 371
(1994).
31. J. F. Wager, S. Lim, J. H. Ryu, J. Marlia, K.
Remley, K. Lite, T. K. Plant, A. Weisshaar, and L. M. Casas, "Compositionally
Inhomogeneous Silicon Oxynitride Dielectrics," Spring Meeting of the
Electrochemical Society, San Francisco California, May 24,
1994.
32. P. D. Keir, W. M. Ang, and J. F. Wager, "Modeling
Space Charge in ACTFEL Devices using a Single Sheet Charge Model," SID 95
Digest, 476 (1995).
33. R. L. Thuemler, P. D. Keir, and J. F. Wager,
"Phosphor Field Dependence in ALE SrS:Ce ACTFEL Devices," SID 95 Digest, 473 (1995).
34. P. Rack, P. Holloway, S. S. Sun, E. Dickey, C.
King, L. Pham, and J. F. Wager, "Brighter Blue Electroluminescent Devices with
an Enhanced Electron Injection Layer," SID 95 Digest, 480
(1995).
35. J. A. Samuels, D. C. Smith, K. N. Siebein, K.
Salazar, R. T. Tuenge, C. F. Shaus, C. N. King, H. Le, J. Hitt, R. L. Thuemler, and J. F. Wager,
"MOCVD of SrS and SrS:Ce Thin Films for Electroluminescent Flat Panel Displays,"
Metal-Organic Chemical Vapor Deposition of Electronic Ceramics II Symposium, p.
15, (1995).
36. J. F. Wager, P. D. Keir, R. L. Thuemler, and S.
Shih, “Thin-Film Electroluminescent Device Space-Charge Modeling,”
1st International Conference on the Science and Technology of Display
Phosphors Extended Abstracts, 55 (1995).
37. M. Peter, K. Lite, K. Streicher, T. K. Plant, and
J. F. Wager, “Hot Electron Impact Excitation in Thin-Film Electroluminescent
Devices,” 1st International Conference on the Science and Technology
of Display Phosphors Extended Abstracts, 61 (1995).
38. P. D. Keir and J. F. Wager, "SPICE Modeling of
Dynamic Space Charge in Alternating-Current Thin-Film Electroluminescent
Devices," SID 96 Digest, 305 (1996).
39. S. Lim, S. J. Kim, J. H. Jung, B. K. Ju, M. H.
Oh, and J. F. Wager, “High Quality Silicon-Nitride Thin Films Grown by Helium
Plasma-Enhanced Chemical Vapor Deposition.” 9th International Vacuum
Microelectronics Conference IVMC’96, 406 (1996).
40. J. C. Hitt and J. F. Wager, “Static Space Charge
in Evaporated ZnS:Mn TFEL Devices,” 2nd International Conference on the
Science and Technology of Display Phosphors Extended Abstracts, 81
(1996).
41. J. F. Wager, "Electroluminescent Phosphors: Point
Defects", Inorganic and Organic Electroluminescence, edited by R.H. Mauch and
H.-E. Gumlich (Wissenchaft and
Technik Verlag, Berlin), p.33 (1996).
42. I. Lee, S. Pennathur, K. Streicher, T. K. Plant,
J.F. Wager, P. Vogl, and S.M. Goodnick, "High-Field Electron Transport of the
ZnS Phosphor in AC Thin-Film Electroluminescent Devices," Inst. Phys. Conf. Ser.
No. 145, 1229 (1996).
43. S. S. Lee, S. Lim, S. S. Sun, J.F. Wager,
“Photoluminescence and Electroluminescence Characteristics of
CaSiN2:Eu Phosphor,” Proceedings of the SPIE 3241, 75
(1997).
44. D.R. Beck, J. F. Wager, L. Arbuthnot, and T.
Flegal, "AMEL Power Considerations," SID 97 Digest, 615
(1997).
45. B. A. Cleary, P. D. Keir, J. C. Hitt, T. K.
Plant, and J. F. Wager, “Photo-induced Charge and Luminance Measurements of
Evaporated ZnS:Mn ACTFEL Devices,” 3rd International Conference on the Science
and Technology of Display Phosphors Extended Abstracts, 65
(1997).
46. J. B. Peery, P. D. Keir, W. M. Ang, and J. F.
Wager, “Simulation of Evaporated ZnS:Mn ACTFEL Devices,” 3rd International Conference on the Science
and Technology of Display Phosphors Extended Abstracts, 69
(1997).
47. S. S. Lee, S. Lim, S. S. Sun, J. F. Wager,
“Photoluminescence and Electroluminescence Characteristics of
CaSiN2:Eu Phosphor,”
3rd International
Conference on the Science and Technology of Display Phosphors Extended
Abstracts, 69 (1997).
48. S. S. Lee, S. Lim, S. S. Sun, J. F. Wager, “A New
CaSiN2:Eu Phosphor for Thin-Film Electroluminescent Device
Applications,” SID 98 Digest (1998).
49. B. J. Norris, J. P. Bender, and J. F. Wager,
“Steady-State Transient Current-Voltage Characterization of OLEDs,”
4th International Conference on the Science and Technology of Display
Phosphors Extended Abstracts, 83 (1998).
50. J. P. Bender, B. J. Norris, and J. F. Wager,
“OLED Modeling via SPICE,” 4th International Conference on the
Science and Technology of Display Phosphors Extended Abstracts, 87
(1998).
51. B. A. Cleary, P. D. Keir, J. C. Hitt, T. K.
Plant, and J. F. Wager, B. Aitchison, R. T. Tuenge, and S. -S. Sun,
“Subthreshold Voltage-Induced Transferred Charge Analysis of ZnS:Mn TFEL
Devices,” 4th International Conference on the Science
and Technology of Display Phosphors Extended Abstracts, 291
(1998).
52. C. A. Nevers, B. A. Cleary, T. K. Plant, and J.
F. Wager, S. Moehnke, and R. T. Tuenge, “Photo-induced Charge and Luminescence
Measurements of ALE SrS:Ce TFEL Devices,” 4th International Conference on the Science
and Technology of Display Phosphors Extended Abstracts, 291
(1998).
53. J. C. Hitt and J. F. Wager, “An n-Sheet
State-Space TFEL Device Model,” 5th International Conference on the
Science and Technology of Display Phosphors Extended Abstracts, 69
(1999).
54. B. A. Baukol, P. D. Keir, J. C. Hitt, B. L.
Clark, D. A. Keszler, and J. F. Wager, “EL Thermal Quenching in SrS:Cu TFEL
Devices,” 5th International Conference on the Science and Technology
of Display Phosphors Extended Abstracts, 89 (1999).
55. B. L. Clark, D. Li, D. A. Keszler, P. D. Keir,
and J. F. Wager, “Saturated Green Electroluminescence from SrS TFEL Devices,”
5th International Conference on the Science and Technology of Display
Phosphors Extended Abstracts, 125 (1999).
56. S. Lim, H. Chang, and J. F. Wager, “Inhomogeneous
Thin Film Optical Coatings for Flat Panel Display Application,” SID 99 Digest
(1999).
57. B. A Baukol, J. F. Wager, and S. Moehnke, "Cu
Doping of Atomic Layer Epitaxy SrS via a Rapid Thermal Anneal Process," SID 00
Digest, 656 (2000).
58. B. A. Baukol, J. F. Wager, J. Ihanus, M. Leskela,
and R. Tuenge, “Eu+2-doped ALE SrS and CaS Red TFEL Phosphors,”
6th International Conference on the Science and Technology of Display
Phosphors Extended Abstracts, 153 (2000).
59. B. L. Clark, D. A. Keszler, J. P. Bender, and J.
F. Wager, “Photo- and Electroluminescence in Zinc Germanate and Zinc Silicate
Powders and ACTFEL Devices,” 6th International Conference on the
Science and Technology of Display Phosphors Extended Abstracts, 145 (2000).
60. J. P. Bender and J. F. Wager, “ACTFEL Device
Modeling via SPICE,” 6th International Conference on the Science and
Technology of Display Phosphors Extended Abstracts, 69 (2000).
61. V. Bondar, L. Axelrud, V. Davydov, Y. Dubov, S.
Popovich, J. F. Wager, and J. P. Bender, “Synthesis and Properties of Phosphors
Based on Zn2GeO4:Mn for Electroluminescent and
Field-Emission Displays,” 6th International Conference on the Science
and Technology of Display Phosphors Extended Abstracts, 79 (2000).
62.
M. K. Jayaraj, A. D. Draeseke, J. Tate, R. L. Hoffman,
and J. F. Wager, “Transparent pn Heterojunction Thin Film Diodes,” MRS Proceedings,
Vol. 666, p. F4.1 (2001).