Conley Materials and Devices Group: Facilities
Electrical Engineering and Computer Science | Materials Science | Oregon State University

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Atomic Layer Deposition (ALD) Chambers

1) Installed Fall 2013: Picosun SUNALE R-200 200mm Plasma Enhanced ALD system. The R-200 system is load locked, can handle 200 mm wafers, and is capable of both thermal ALD (with water or O2 gas), and plasma-assisted ALD (PEALD), with O2 plasma and two other plasma gasses. In addition, this tool currently has three metal-organic source lines (including two for low vapor pressureprecursors). One source is held at room temperature and two sources are heated. Depositions up to 500 C are possible.

R200 Group Photo

2) Installed Fall 2010: Arradiance Gemstar ALD system (see press release); 150 mm ALD reactor with 3D substrate capability, thermal ALD with water as an oxygen source or H2S as a sulfur source. There are four metal-organic source ports and substrate heat is available up to 475 C. The outlet valve on this tool may be closed in order to perform a 'soak' of the sample with each precursor pulse, useful for coating highly porous materials. An in-situ quartz crystal microbalance can be installed, 5 precursor source lines (1 gas; 2 vapour draw for liquids; and 2 low vapor pressure sources, heated up to 120C, one with N2 boost).

ArradianceArradianceArradianceOpen

3) Installed August 2008: Picosun SUNALE R-150B; 150 mm thermal ALD system with H2O and ozone generator (added spring 2017). In addition to the water/ozone line, there are four metal-organic source lines with two Picosolid Boosters heated sources (up to 150C), and two Picosolution precursor sources held at room temperature (Peltier cooled). Deposition temperatures from 50-400+ C are possible.

PicosunR150

ALD Materials:
Conductive
- Ru (Ru(DMBD)(CO)3 / O2)
- RuO2 (Ru(DMBD)(CO)3 / O2) - Thermal ALD & PEALD
Dielectric
- Al2O3 (TMA / H2O) - Thermal and PEALD
- HfO2 (TEMA-Hf / H2O)
- SiO2 PEALD (Bis(DiEthylAmino)Silane (BDEAS) / O2 plasma)
- Bi2O3 (Bi(OCMe2 iPr)3 and H2O)
- Nb2O5 (Nb2(OC2H5)10 / H2O)
- Ta2O5 ( Ta2(OC2H5)10 / H2O and TaCl5 / H2O)
- TiO2 (TiCl4 / H2O or Ti-tetraisopropoxide / H2O)
- ZrO2 (TEMA-Zr / H2O)
Semiconductor
- SnO2 (TDMA-Sn / H2O)
- ZnO (DEZ / H2O)
-NiO (Ni(tBu2DAD)2 / O3)
- Co3O4 (Co(Cp2) / O3)
Sulfides
- ZnS (DEZ / H2S)
- MoS2 (MoCl5 / H2S)
Various nanolaminates

Under development:
- Various metal oxides
- Even more nanolaminates

Nanowire Growth Systems

1) Owen System: Two zone vacuum furnace with MFC gas flow control of N2 and O2, separate tubes for carbonization of photoresist and parylene CVD

NWFurnace

2) Kelley System: Two zone atmospheric furnace with MFC gas flow control of N2 and O2

Electrical Test

Four fully equipped probestations with standard Agilent I-V and C-V characterazation equipment; hot chuck; cryo-probe available.

Unique Characterization

BlueSpin low field electrically detected magnetic resonance (EDMR) for spin dependent tunneling (SDT) and spin dependent recombination (SDR).

Internal photoemission (IPE) spectroscopy for measuring internal energy barrier heights at metal/insulator, metal/semiconductor, and insulator/semiconductor interfaces.

Semiconductor Fabrication

Standard sputtering deposition, evaporation, etch, clean, lithography, anneal, etc. available in co-located OSU cleanroom.

Ellipsometry, profilometry, glovebox, Kelvin probe

See OSU Materials Synthesis and Characterization (MASC) Center Website:

MaSC Logo

Analytical

Spectroscopic ellipsometry, atomic force microscopy (AFM), x-ray diffraction (XRD), x-ray reflectivity (XRR), x-ray photoelectron spectroscopy (XPS) are available in shared use facilities on campus.

OSU Electron Microscopy Facility: Transmission electron microscopy (TEM), scanning electron microscopy (SEM),

Miscellaneous

Other analytical support available through ONAMI facilities such as CAMCOR, CEMN, and EMIF

Probostat

John F. Conley, Jr.: jconley@ eecs.oregonstate.edu, ph (541)737-9874, 3089 Kelley Engineering Center