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Publications, Presentations, and Patents

C1.1.  Refereed Books & Book Chapters

J.F. Conley, Jr. and N. Alimardani, "Impact of Electrode Roughness on MIM Diodes and Step Tunneling in Nano-laminate MIIM Tunnel Barriers," Ch. 5 of Rectenna Solar Cells, G. Moddel and S. Grover, eds., (Springer, 2013).

C1.2.  Refereed Journal Publications (includes 3 invited)

* = Student or post-doctoral authors

  1. Lester Lampert, Brittany Timonen, Sean Smith, Brittney Davidge, Haiyan Li, John F. Conley, Jr., Jeffrey Singer, and Jun Jiao, "Amorphous Alumina Nanowire Array Efficiently Delivers Ac-DEVD-CHO to Inhibit Apoptosis of Dendritic Cells," Chem. Commun. 50, 1234 (2014).  DOI:10.1039/C3CC48088G.
  2. D.Z. Austin, D. Allman, D. Price, and S. Hose, M. Saly, and J.F. Conley, Jr., "Atomic Layer Deposition of Bismuth Oxide using Bi(OCMe2iPr)3 and H2O," J. Vac. Sci. Tech. A 32(1) (2014). DOI: 10.1116/1.4840835
  3. N. Alimardani, J. McGlone, J.F. Wager, and J.F. Conley, Jr., "Conduction Processes in Metal-Insulator-Metal Diodes with Ta2O5 and Nb2O5 Dielectrics Deposited by Atomic Layer Deposition, " J. Vac. Sci. Tech. A 32(1) (2014). DOI: 10.1116/1.4843555
  4. N. Alimardani and J.F. Conley, Jr., "Step Tunneling Enhanced Asymmetry in Asymmetric Electrode Metal-Insulator-Insulator-Metal Tunnel Diodes," Appl. Phys. Lett. 102, 143501-1 to 143501-5 (2013). DOI: 10.1063/1.4799964
  5. J.S. Rajachidambaram, S. Murali, J.F. Conley, Jr., S.L. Golledge, and G.S. Herman, "Bipolar resistive switching in an amorphous zinc tin oxide memristive device," J. Vac. Sci. Tech. B. 31(1), 01A104-1 to 01A104-6 (2013). DOI 10.1116/1.4767124
  6. S. Murali*, J.S. Rajachidambaram*, S.-Y. Han*, C.-H. Chang, G.S. Herman*, and J.F. Conley, Jr., "Resistive Switching in Zinc-Tin-Oxide," Sol. State Electronics 79, 248-252 (2013), doi: 10.1016/j.sse.2012.06.016. DOI: 10.1016/j.sse.2012.06.016
  7. C.-C. Huang*, A.D. Mason*, J.F. Conley, Jr., C. Heist*, M.T. Koesdjojo*, V.T. Remcho, and T. Afentakis, "Impact of Parylene-A Encapsulation on ZnO Nanobridge Sensors and Sensitivity Enhancement via Continuous UV Illumination," J. Elec. Mater. 41(5), 873 (2012). DOI: 10.1007/s11664-011-1867-7.
  8. N. Alimardani*, E. W. Cowell III*, J.F. Wager, J.F. Conley, Jr., D.R. Evans, M. Chin, S.J. Kilpatrick, and M. Dubey, "Impact of electrode roughness on metal-insulator-metal tunnel diodes," J. Vacuum Science and Technology A 30(1), 01A113 (2012). 5 pgs.
  9. S. Murali*, N. Prasertpalichart*, C.-C. Huang*, D. Cann, R. Yimnirun, and J.F. Conley, Jr., "Impedance Spectroscopy of ZnO Nanowires," J. Electrochem. Soc. 158(10), G211-G216 (2011). 6 pgs.
  10. T. Waggoner*, J. Triska*, K. Hoshino*, J.F. Wager, and J.F. Conley Jr., "Zirconium Oxide – Aluminum Oxide Nanolaminate Gate Dielectrics for Amorphous Oxide Semiconductor Thin-Film Transistors," J. Vac. Sci. Tech. B 29(4), 04D115-1 to 04D115-7 (2011). 7 pgs.
  11. A.D. Mason*, C.-C. Huang*, S. Kondo*, M. T. Koesdjojo*, Y.H. Tennico*, V.T. Remcho, J. F. Conley, Jr., "Functionalization and Protection of ZnO Nanobridge Sensors for Gas and Liquid-Phase Sensing," Sensors and Actuators B 155, 245-252 (2011). 8 pgs.
  12. E.W. Cowell, III*, N. Alimardani*, C.C. Knutson*, J.F. Conley, Jr., D.A. Keszler, B.J. Gibbons, and J.F. Wager, "Advancing MIM Electronics: Amorphous Metal Electrodes," Advanced Materials 23, 74-78 (2011). 5 pgs.
  13. [INVITED] J.F. Conley, Jr., "Instabilities in Amorphous Oxide Semiconductor Transparent Thin Film Transistors," IEEE Trans. Device and Material Reliability 10(4), 460-475 (2010).  
  14. S. Smith*, K. McAuliffe*, and J.F. Conley, Jr., "Atomic Layer Deposited Al2O3/Ta2O5 Nanolaminate Capacitors," Sol. Sta. Elec. 54, 1076-1082 (2010). 7 pgs 
  15. B. Pelatt*, C.C. Huang*, and J.F. Conley, Jr., "ZnO Nanobridge Devices Fabricated on Carbonized Photoresist," Sol. Sta. Elec. 54, 1143–1149 (2010). 7 pgs
  16. J. Triska*, J.F. Conley, Jr., R. Presley*, and J.F. Wager, "Positive Bias Stress Stability of Zinc-Tin-Oxide Thin Film Transistors with Al2O3 Gate Dielectrics," J. Vacuum Science and Technology B 28(4), C5I1-C5I6 (2010). 7 pgs.
  17. C.C. Huang*, B. Pelatt*, and J.F. Conley, Jr., "Directed Integration of ZnO Nanobridge Sensors Using Pre-Patterned Carbonized Photoresist," Nanotechnology 21, 195307 (2010). 7 pgs.
  18. J. Green*, T. Gutu*, L. Dong*, J. Jiao, J.F. Conley, Jr., and Y. Ono, "Enhanced Field Emission from Atomic Layer Deposition (ALD) ZnO coated CNTs," J. Appl. Phys. 99, 094308-1 to 094308-4 (2006).
  19. G. Goncher, R. Solanki, J. R. Carruthers, J.F. Conley, Jr., and Y. Ono, "p-n Junctions in Silicon Nanowires," J. Elec. Mat. 35(7), 1509-1512 (2006). 
  20. J.F. Conley, Jr., L. Stecker, and Y. Ono, "Selective Growth and Directed Integration of ZnO Nanobridge Devices on Si Substrates without a Metal Catalyst using a ZnO Seed Layer," J. Elec. Mat. 35(4), 795-802 (2006). 
  21. [INVITED] P.M. Lenahan and J.F. Conley, Jr., "Magnetic Resonance Studies of Trapping Centers in High-k Dielectric Films on Silicon," IEEE Trans. on Materials and Device Reliability 5(1), 90-102 (2005).
  22. J.F. Conley, Jr., L. Stecker, and Y. Ono, "Directed Integration of ZnO Nanobridge Devices on a Si Substrate," Appl. Phys. Lett. 87, 223114-1 to 223114-3 (2005).
  23. L. Dong*, J. Bush*, V. Chirayos*, R. Solanki, J. Jiao, Y. Ono, J.F. Conley, Jr., and B.D. Ulrich, "Dielectrophoretically Controlled Fabrication of Single-Crystal Nickel Silicide Nanowire Interconnects," Nano Letters 5(10), 2112-2115 (2005).
  24. L. Dong*, V. Chirayos*, J. Bush*, J. Jiao, V.M. Dubin*, R.V. Chebian*, Y. Ono, J.F. Conley, Jr., and B.D. Ulrich, "Floating-Potential Dielectrophoresis-Controlled Fabrication of Single Carbon Nanotube Transistors and Their Electrical Properties," J. Phys. Chem. B 109, 13148-13153 (2005).
  25. J.T. Ryan*, P.M. Lenahan, A.Y. Kang*, J.F. Conley, Jr., G. Bersuker, P. Lysaght, "Identification of the atomic scale defects involved in radiation damage in HfO2 based MOS devices," IEEE Trans. Nucl. Sci. 52(6), 2272-2275 (2005).
  26. J.F. Conley, Jr., L. Stecker, and Y. Ono, "Directed assembly of ZnO nanowires on a Si substrate without a metal catalyst using a patterned ZnO seed layer," Nanotechnology 16, 292-296 (2005).
  27. M. Dautrich*, P.M. Lenahan, A.Y. Kang*, and J.F. Conley, Jr., "Non-invasive nature of corona charging on thermal Si/SiO2 structures," Appl. Phys. Lett. 85(10), 1844-1845 (2004).
  28. W. Gao, J.F. Conley, Jr., and Y. Ono, "NbO as Gate Electrode for n-channel metal-oxide-semiconductor field-effect-transistors," Appl. Phys. Lett. 84(23), 4666-4668 (2004).
  29. J.F. Conley, Jr., Y. Ono, and D.J. Tweet, "Densification and Improved Electrical Properties of Pulse Deposited films via in-situ Modulated Temperature Annealing," Appl. Phys. Lett. 84(11), 1913-1915 (2004).
  30. J.F. Conley, Jr., Y. Ono, D.J. Tweet, and R. Solanki, "Pulsed Deposition of Metal-Oxide Thin Films using Dual Precursors," Appl. Phys. Lett. 84(3), 398-400 (2004).
  31. A.Y. Kang*, P.M. Lenahan, and J.F. Conley, Jr., "Electron Spin Resonance Observation of Trapped Electron Centers in Atomic Layer Deposited HfO2 on Si," Appl. Phys. Lett. 83(16), 3407-3409 (2003).
  32. W. He*, R. Solanki, J.F. Conley, Jr., and Y. Ono, "Pulsed Deposition of Silicate Films," J. Appl. Phys. 94(5), 3657-3659 (2003).
  33. J.F. Conley, Jr., Y. Ono, R. Solanki, G. Stecker, and W. Zhuang, "Electrical Properties of HfO2 Deposited via Atomic Layer Deposition using Hf(NO3)4 and H2O," Appl. Phys. Lett. 82(20), 3508-3510 (2003).
  34. A. Vandooren, S. Cristoloveanu, J.F. Conley, Jr., M. Mojarradi, and E. Kolawa, "A Systematic Investigation of the Degradation Mechanisms in SOI N-Channel LD-MOSFETs," Sol. Sta. Elec. 47, 1419-1427 (2003).
  35. J.F. Conley, Jr., Y. Ono, D.J. Tweet, W. Zhuang, and R. Solanki, "Atomic Layer Deposition of Thin Hafnium Oxide Films Using a Carbon Free Precursor," J. Appl. Phys. 93(1), 712-718 (2003).
  36. W. Zhuang, J.F. Conley, Jr., Y. Ono, D.R. Evans, and R. Solanki, "Hafnium Nitrate Precursor Synthesis and Hafnium Oxide Thin Film Properties," Integrated Ferroelectrics 48, 3-12 (2002).
  37. A. Y. Kang*, P. M. Lenahan, and J. F. Conley, Jr., "The Radiation Response of the High Dielectric-Constant Hafnium Oxide/Silicon System," IEEE Trans. Nucl. Sci. 49, 2636-2642 (2002).
  38. A. Y. Kang*, P. M. Lenahan, J. F. Conley, Jr., and R. Solanki, "Electron Spin Resonance Study of Interface Defects in Atomic Layer Deposited Hafnium Oxide on Si," Appl. Phys. Lett. 81, 1128-1130 (2002).
  39. J.F. Conley, Jr., Y. Ono, W. Zhuang, D.J. Tweet, W. Gao, S. K. Mohammed, and R. Solanki, "Atomic Layer Deposition of Hafnium Oxide using Anhydrous Hafnium Nitrate," Electrochem. and Sol. State Lett. 5(5), C57-C59 (2002).
  40. J.S. Suehle, E. M. Vogel, P. Roitman, J.F. Conley, Jr., A. H. Johnston, B. Wang, J.B. Bernstein, and C.E. Weintraub, "Observation of Latent Reliability Degradation in Ultrathin Oxides After Heavy-Ion Irradiation," Appl. Phys. Lett. 80(7), 1282-1284 (2002).
  41. J.F. Conley, Jr., J.S. Suehle, A.H. Johnston, B. Wang, T. Miyahara, and E.M. Vogel, "Heavy-Ion Induced Soft Breakdown of Thin Gate Oxides," IEEE Trans. Nucl. Sci. 48, 1913-1916 (2001).
  42. A. Vandooren, J.F. Conley, Jr., S. Cristoloveanu, M. Mojarradi, E. Kolowa, "Degradation Mechanisms in SOI n-channel LDMOSFETs," Microelectronic Engineering 59(1-4), 489-495 (2001).
  43. C.J. Nicklaw*, M.P. Pagey, S.T. Pantelides, D.M. Fleetwood, R.D. Schrimpf, K.F. Galloway, J.E. Wittig, B.M. Howard, E. Taw*, W. H. McNeil*, and J.F. Conley, Jr., "Defects and Nanocrystals Generated by Si Implantation into a-SiO2," IEEE Trans. Nucl. Sci. 47, 2269-2275 (2000).
  44. R.J. Milanowski, M.P. Pagey, L.W. Massengill, J.F. Conley, R.D. Schrimpf, and K.F. Galloway, "Transient Simulation of Radiation-Induced Charge Trapping and Interface Trap Formation Using a Three-Carrier Transport Model for Silicon Dioxide," Journal of Radiation Effects, Research, and Engineering,  18, 115 (2000).  (ITAR)
  45. J.F. Conley, Jr., P.M. Lenahan, and W.F. McArthur, "First-Order Defect Precursor Formation Kinetics for a Predictive Model of Oxide Charging," Journal of Radiation Effects, Research, and Engineering 18,  (2000).  (ITAR)
  46. P.M. Lenahan, J.J. Mele*, J.F. Conley, Jr., R.K. Lowry, and D. Woodbury, "Predicting Radiation Response from Process Parameters:  Verification of a Physically Based Predictive Model," IEEE Trans. Nucl. Sci. 46, 1534-1543 (1999).
  47. [INVITED] P.M. Lenahan and J.F. Conley, Jr., "What Can Electron Paramagnetic Resonance Tell Us About the Si/SiO2 System?," J. Vac. Sci. and Tech. B 16, 2134-2153 (1998).
  48. J.F. Conley, Jr. and P.M. Lenahan, "Predicting Radiation Hardness from Process Parameters:  A 'First-Principles' Model of Oxide Charging," Journal of Radiation Effects, Research, and Engineering  17, (1999).  (ITAR)
  49. P.M. Lenahan and J.F. Conley, Jr., "A Comprehensive Physically Based Predictive Model for Radiation Damage in MOS Systems," IEEE Trans. Nucl. Sci. 45, 2413-2423 (1998).
  50. P.M. Lenahan and J.F. Conley, Jr., “Response to ‘Comment on “A Model of Hole Trapping in SiO2 Films on Si”’," J. Appl. Phys. 83, 5591-5594 (1998).
  51. J.F. Conley, Jr., P.M. Lenahan, and W.F. McArthur, "Preliminary Investigation of the Kinetics of Post-Oxidation Rapid Thermal Anneal Induced Hole-Trap-Precursor Formation in Microelectronic SiO2 Films," Appl. Phys. Lett. 73, 2188-2190 (1998).
  52. P.M. Lenahan and J.F. Conley, Jr., "A Physically Based Predictive Model of Si/SiO2 Interface Trap Generation Resulting from the Presence of Holes in the SiO2," Appl. Phys. Lett. 71, 3126-3128 (1997).
  53. P.M. Lenahan and J.F. Conley, Jr., "A Model of Hole Trapping in SiO2 Films on Silicon," J. Appl. Phys. 81, 6822-6824 (1997).
  54. J.F. Conley, Jr., P.M. Lenahan, B.D. Wallace, and P. Cole, "Quantitative Model of Radiation Induced Charge Trapping in SiO2," IEEE Trans. Nucl. Sci. 44, 1804-1809 (1997).
  55. J.F. Conley, Jr., P.M. Lenahan, and B.D. Wallace, "Electron Spin Resonance Characterization of Trapping Centers in Unibond Buried Oxides," IEEE Trans. Nucl. Sci. 43, 2635-2638 (1996).
  56. J.F. Conley, Jr., P.M. Lenahan, A.J. Lelis, and T.R. Oldham, “Electron Spin Resonance Evidence that E'γ Centers Can Behave as Switching Oxide Traps,” IEEE Trans. Nucl. Sci. 42, 1744-1749 (1995).
  57. J.F. Conley, Jr. and P.M. Lenahan, “Electron Spin Resonance Analysis of EP Center Interactions with H2: Evidence for a Localized EP Center Structure,” IEEE Trans. Nucl. Sci. 42, 1740-1743 (1995).
  58. J.F. Conley, Jr., P.M. Lenahan, A.J. Lelis, and T.R. Oldham, “Electron Spin Resonance Evidence for the Structure of a Switching Oxide Trap:  Long Term Structural Change at Silicon Dangling Bond Sites in SiO2,” Appl. Phys. Lett. 67, 2179-2181 (1995).
  59. J.F. Conley, Jr. and P.M. Lenahan, “Hydrogen Complexed EP (E') Centers and EP/H2 Interactions:  Implications for EP Structure,” Microelectronic Engineering 28, 35-38 (1995).
  60. J.F. Conley, Jr., P.M. Lenahan, R.K. Lowry, H.L. Evans, and T.J. Morthorst, "Electron Spin Resonance Evidence for an Impurity Related E'-Like Hole Trapping Defect in Thermally Grown SiO2 on Si," J. Appl. Phys. 76, 8186-8188 (1994).
  61. J.F. Conley, Jr., P.M. Lenahan, R.K. Lowry, H.L. Evans, and T.J. Morthorst, "Observation and Electronic Characterization of Two E' Center Charge Traps in Conventionally Grown Thermal SiO2 on Si," Appl. Phys. Lett. 65, 2281-2283 (1994).
  62. J.F. Conley, Jr., P.M. Lenahan, R.K. Lowry, H.L. Evans, and T.J. Morthorst, "Observation and Electronic Characterization of "New" E' Center Defects in Technologically Relevant Thermal SiO2 on Si:  An Additional Complexity in Oxide Charge Trapping," J. Appl. Phys. 76, 2872-2880 (1994).
  63. J.F. Conley, Jr. and P.M. Lenahan, "Molecular Hydrogen, E' Center Hole Traps, and Radiation Induced Interface Traps in MOS Devices," IEEE Trans. Nuc. Sci. 40, 1335-1340 (1993).
  64. J.F. Conley and P.M. Lenahan, "Radiation Induced Interface States and ESR Evidence for Room Temperature Interactions Between Molecular Hydrogen and Silicon Dangling Bonds in Amorphous SiO2 Films on Si," Microelectronic Engineering 22, 215-218 (1993).
  65. J.F. Conley and P.M. Lenahan, "Room Temperature Reactions Involving Silicon Dangling Bond Centers and Molecular Hydrogen in Amorphous SiO2 Thin Films on Silicon," Appl. Phys. Lett. 62, 40-42 (1993).
  66. J.F. Conley, P.M. Lenahan, and P. Roitman, "Evidence for a Deep Electron Trap and Charge Compensation in Separation by Implanted Oxygen Oxides," IEEE Trans. Nuc. Sci. 39, 2114-2120 (1992).
  67. J.F. Conley and P.M. Lenahan, "Room Temperature Reactions Involving Silicon Dangling Bond Centers and Molecular Hydrogen in Amorphous SiO2 Thin Films on Silicon," IEEE Trans. Nuc. Sci. 39, 2186-2191 (1992).
  68. J.F. Conley, Jr. P.M. Lenahan, and P. Roitman, "Electron Spin Resonance of Separation by Implanted Oxygen Oxides:  Evidence for Structural Change and a Deep Electron Trap," Appl. Phys. Lett. 60, 2889-2891 (1992).
  69. J.F. Conley, P.M. Lenahan, and P. Roitman, "Electron Spin Resonance Study of E' Trapping Centers in SIMOX Buried Oxides," IEEE Trans. Nuc. Sci. 38, 1247-1252 (1991).

C1.3.  Peer-Reviewed Archival Conference Publications (including 6 invited)

The following papers appeared in archival proceedings that were distributed to libraries (the next section covers other types of proceedings).  The acceptance rate is indicated as part of the entry whenever the selection process was rigorous.   
* = Student or post-doctoral authors

  1. T. Klarr, D. Austin, N. Alimardani, and J.F. Conley, Jr., "Electrical Stressing of HfO2/Al2O3 Bilayer Metal-Insulator-Insulator-Metal Diodes," IEEE International Integrated Reliability Workshop (IRW) Final Report, in press (2013).
  2. N. Alimardani and J.F. Conley, Jr., "Step tunneling enhanced asymmetry in metal-insulator-insulator-metal (MIIM) diodes for rectenna applications," Proceedings of the SPIE, Next Generation (Nano) Photonic and Cell Technologies for Solar Energy Conversion IV, O.V. Sulima and G. Conibeer, eds., Vol. 8824, OS1-10, 10 pgs., San Diego, CA, August 25-27, 2013. " Step tunneling enhanced asymmetry in metal-insulator-insulator-metal (MIIM) diodes for rectenna applications ", Proc. SPIE 8824, Next Generation (Nano) Photonic and Cell Technologies for Solar Energy Conversion IV, 88240S (September 25, 2013); doi:10.1117/12.2024750; http://dx.doi.org/10.1117/12.2024750
  3. S.W. Smith*, H. Chan*, C. Buesch*, J. Simonsen, and J.F. Conley Jr., "Improved Temperature Stability of Atomic Layer Deposition Coated Cellulose Nanocrystal Aerogels," Mater. Res. Soc. Proc. 1465 (2012). 6 pgs. mrss12-1465-ss05-07 doi:10.1557/opl.2012.1073.
  4. [INVITED] G.S. Herman, J.S. Rajachidambaram, M.S. Rajachidambaram, S.-Y. Han, C.-H. Chang, S. Murali, J.F. Conley, Jr., "Transparent Oxide Semiconductors: Recent Material Developments and New Applications," Proc. of the 2011 IEEE Photonics Conference (DOI 10.1109/PHO.2011.6110668 978-1-4244-8939-8/11/), p. 555-556.
  5. A.D. Mason*, C.-C. Huang*, M.T. Koesdjojo*, N. Stephon*, V.T. Remcho and J. F. Conley, Jr., "Functionalization and Environmental Stabilization of ZnO Nanobridge Sensors Fabricated using Carbonized Photoresist," Mater. Res. Soc. Proc. 1350, mrss11-1350-ee11-06 DOI: 10.1557/opl.2011.1243, 6 pgs.
  6. S. Murali*, J.S. Rajachidambaram*, S.Y. Han, C.-H. Chang, G. Herman, and J.F. Conley, Jr., "Bipolar Resistive Switching of Zinc-Tin-Oxide Resistive Random Access Memory," Proc. of the IEEE International NANO 2011 Conference, Portland, OR, August 2011, pgs. 740-743.
  7. N. Alimardani*, J.F. Conley, Jr., E. W. Cowell III*, J.F. Wager, M. Chin, S. Kilpatrick, and M. Dubey "Stability and Bias Stressing of Metal/Insulator/Metal Diodes," IEEE International Integrated Reliability Workshop (IRW) Final Report, ISBN 978-1-4244-8522-2, pgs. 80-84 (2010).
  8. G.L. Smith, R.G. Polcawich, J.S. Pulskamp, T. Waggoner*, and J.F. Conley, Jr., "Atomic Layer Deposited Alumina for use as an Etch Barrier Against Xenon Difluoride Etching," Solid State Sensor, Actuator and Microsystems Workshop Proceedings, Hilton Head Island, SC, pgs. 194-197 (2010).
  9. S. Smith*, K. McAuliffe*, and J.F. Conley, Jr., "Atomic Layer Deposited Al­2O3/Ta2O5 Nanolaminate Capacitors," 2009 IEEE International Semiconductor Device Research Symposium (ISDRS) Proceedings, ISBN 978-1-4244-6031-1/09, 2 pgs (2009).
  10. A. Mason*, T.F. Roberts*, J.F. Conley, Jr., D.T. Price, D.D.J. Allman, and M.S. McGuire, "Investigation of Growth Parameter Influence on Hydrothermally Grown ZnO Nanowires Using a Research Grade Microwave," 2009 IEEE International Semiconductor Device Research Symposium (ISDRS) Proceedings, ISBN 978-1-4244-6031-1/09, 2 pgs (2009).
  11. B. Pelatt*, C.C. Huang*, and J.F. Conley, Jr., "ZnO Nanobridge Devices Fabricated on Carbonized Photoresist," 2009 IEEE International Semiconductor Device Research Symposium (ISDRS) Proceedings, ISBN 978-1-4244-6031-1/09, 2pgs (2009).
  12. [INVITED] J.F. Conley, Jr., "Instabilities in Oxide Semiconductor Transparent Thin Film Transistors," 2009 IEEE International Integrated Reliability Workshop (IRW) Final Report, ISBN 978-1-4244-3921-8, pgs. 50-55, (2009).
  13. J. Triska*, J.F. Conley, Jr., R. Presley*, and J.F. Wager, "Bias Stability of Zinc-Tin-Oxide Thin Film Transistors with Al2O3 Gate Dielectrics," IEEE International Integrated Reliability Workshop (IRW) Final Report, ISBN 978-1-4244-3921-8, pgs. 86-89 (2009).
  14. A.D. Mason*, T.J. Waggoner*, S.W. Smith*, J.F. Conley, Jr., B.J. Gibbons, D. Price, and D. Allman, "Hydrothermal Synthesis of Zinc Oxide Nanowires on Kevlar using ALD and Sputtered ZnO Seed Layers," in Semiconductor Nanowires — Growth, Size-Dependent Properties, and Applications, edited by Ali Javey (Mater. Res. Soc. Symp. Proc. Volume 1178E, Warrendale, PA, 2009), 1178-AA06-38, pgs. 1-6.
  15.  [INVITED] P.M. Lenahan, J.T. Ryan*, C.J. Cochrane*, and J.F. Conley, Jr., "Defects in HfO2 Based Dielectric Gate Stacks," in CMOS Gate-Stack Scaling — Materials, Interfaces and Reliability Implications, edited by J. Butterbaugh, A. Demkov, R. Harris, W. Rachmady, B. Taylor (Mater. Res. Soc. Symp. Proc. Volume 1155, Warrendale, PA, 2009), pgs. 1-6.
  16. J.M. Green*, T. Gutu*, L.F. Dong*, J. Jiao, J.F. Conley, Jr., and Y. Ono. "Electron Microscopy Characterization of Al2O3 and ZnO Coated Carbon Nanotubes." Proceedings of Microscopy and Microanalysis 2006, Vol. 12, Supplement 2, 676-677 (2006).
  17. J.F. Conley, Jr., D. McClain* J. Jiao, W. Gao, D. Evans, and Y. Ono, "Characterization of Nanocones Grown During DC Magnetron Sputtering of an ITO Target," in Chemistry of Nanomaterial Synthesis and Processing, edited by X. Peng, X. Feng, J. Liu, Z. Ren, and J.A. Voigt (Mater. Res. Soc. Symp. Proc. 879E, Warrendale, PA, 2005), Z3.37, pgs. 1-6.   
  18. J.F. Conley, Jr., D.J. Tweet, Y. Ono, and G. Stecker, "Interval Annealing During Alternating Pulse Deposition," in High-k Insulators and Ferroelectrics for Advanced Microelectronic Devices, R.M. Wallace, D. Landheer, M. Houssa, and J. Morais, eds., Mat. Res. Soc. Proc. Vol. 811, pp. 5-10, (Materials Research Society, Pittsburgh, PA, 2004).
  19. Y. Senzaki, S. Park, D. Tweet, J.F. Conley, Jr., and Y. Ono, "Ozone-Based Atomic Layer Deposition of HfO2 and HfxSi1-xO2 and Film Characterization," in High-k Insulators and Ferroelectrics for Advanced Microelectronic Devices, R.M. Wallace, D. Landheer, M. Houssa, and J. Morais, eds., Mat. Res. Soc. Proc. Vol. 811, pp. 217-222, (Materials Research Society, Pittsburgh, PA, 2004).
  20. J.F. Conley, Jr., Y. Ono, D. Tweet, G. Stecker, R. Solanki, and W.W. Zhuang, "Alternating Pulse Deposition of High-k Metal Oxide Thin Films using Hf(NO3)4 as a Metal and an Oxygen Source with Multiple in-situ Annealing," in Physics and Technology of High-k Gate Diectrics II, S. Kar, R. Singh, D. Misra, H. Iwai, M. Houssa, J. Morais, and D. Landheer, eds., Electrochem. Soc. Proc. Vol. 2003-22, (The Electrochemical Society, Pennington, NJ, 2003), 11 pgs.
  21. W. Gao, J.F. Conley, Jr., and Y. Ono, "NbO Gate Electrode," in Physics and Technology of High-k Gate Diectrics II, S. Kar, R. Singh, D. Misra, H. Iwai, M. Houssa, J. Morais, and D. Landheer, eds., Electrochem. Soc. Proc. Vol. 2003-22, (The Electrochemical Society, Pennington, NJ, 2003), 9 pgs.
  22. A.Y. Kang*, P.M. Lenahan, J.F. Conley, Jr., and Y. Ono, "Reliability Concerns for HfO2/Si (and ZrO2/Si) Systems: Interface and Dielectric Traps," IEEE 2003 International Integrated Reliability Workshop (IRW) Final Report, IEEE #03TH8715, p. 24-27 (2003).
  23. M. Dautrich*, P.M. Lenahan, A.Y. Kang*, and J.F. Conley, Jr., "Non-Invasive Nature of Corona Charging on Thermal Si/SiO2 Structures," IEEE 2003 International Integrated Reliability Workshop (IRW) Final Report, IEEE #03TH8715, p. 7-9 (2003).
  24. J.F. Conley, Jr., Y. Ono, and R. Solanki, "Pulsed Deposition of HfO2 using Hf(NO3)4 as an Oxidizing Agent for HfCl4," in CMOS Front-End Materials and Process Technology, T.J. King, R.J.P. Lander, S. Saito, and B. Yu, eds., Mat. Res. Soc. Proc. Vol. 765, pp. 91-96, (Materials Research Society, Pittsburgh, PA, 2003).
  25. W. Gao, J. F. Conley, and Y. Ono, "Stacked Metal Layers as Gates for MOSFET Threshold Voltage Control," in CMOS Front-End Materials and Process Technology, T.J. King, R.J.P. Lander, S. Saito, and B. Yu, eds., Mat. Res. Soc. Proc. Vol. 765, pp. 3-8, (Materials Research Society, Pittsburgh, PA, 2003).
  26. J.F. Conley, Jr., Y. Ono, W. Zhuang, L. Stecker, and G. Stecker, "Electrical Properties and Reliability of HfO2 Deposited via ALD using Hf(NO3)4 Precursor," IEEE 2002 Integrated Reliability Workshop (IRW) Final Report, IEEE #02TH8634, p. 108-112 (2002).
  27. A.Y. Kang*, P.M. Lenahan, and J.F. Conley, Jr., "Reliability Concerns for HfO2/Si Devices: Interface and Dielectric Traps," IEEE International Integrated Reliability Workshop (IRW) Final Report, IEEE #02TH8634, p. 102-107 (2002).
  28. J.F. Conley, Jr., Y. Ono, D.J. Tweet, W. Zhuang, R. Solanki, "Atomic Layer Chemical Vapor Deposition of Hafnium Oxide Using Anhydrous Hafnium Nitrate Precursor," in Silicon Materials – Processing, Characterization, and Reliability, J. Veteran, D.L. O'Meara, V. Misra, P. Ho, eds., Mat. Res. Soc. Proc. Vol. 716, pp. 73-78, (Materials Research Society, Pittsburgh, PA, 2002).
  29. J.S. Suehle, B. Wang*, E. M. Vogel, J.F. Conley, Jr., A. H. Johnston, and J.B. Bernstein, "Latent Reliability Degradation of Ultra-Thin Oxides After Heavy-Ion Irradiation and Gamma-Ray Irradiation," IEEE 2001 International Integrated Reliability Workshop (IRW) Final Report, IEEE #01TH8580, p. 16-19, (2001).
  30. J.F. Conley, Jr., A. Vandooren, L. Reiner*, S. Cristoloveanu, M. Mojarradi, and E. Kolowa, "Radiation Induced Degradation of SOI n-channel LDMOSFETs," in proceedings of the 2001 IEEE International SOI Conference, p. 125-6 (2001).  (Extended abstract.)
  31. J.F. Conley, Jr., Y. Ono, D.J. Tweet, W. Zhuang, M. Khaiser, R. Solanki, "Investigation of Hafnium Oxide Deposited via Atomic Layer Chemical Vapor Deposition (ALCVD)," IEEE 2001 International Integrated Reliability Workshop (IRW) Final Report, IEEE #01TH8580, p. 11-15 (2001).
  32. J.S. Suehle, T. Meyers, and J.F. Conley, Jr., “The Effects of Ionizing Radiation on Wear-Out and Reliability of Thin Gate Oxides,” 2000 IEEE Microelectronics and Reliability and Qualification Workshop, p. IV.2, 4 pgs (2000). (Extended Abstract)
  33. W.M. McNeil*, J.F. Conley, Jr., and H. Walker, "2-D Imaging of Trapped Charge in SiO2 Using Kelvin Probe Force Microscopy," in proceedings of the 2000 IEEE International SOI Conference, p. 38-9 (2000).  (Extended abstract)
  34. J.F. Conley, Jr., P.M. Lenahan, and W.F. McArthur, "Addition of Kinetics to a Predictive Thermodynamics Model of Radiation Hardening," in Government Microcircuit Applications Conference (GOMAC) Digest of Papers, Vol. XXIV, p. 754-757 (1999).  (ITAR)
  35. R. Milanowski, M. Pagey, J. Conley, L. Massengill, R. Schrimpf, and K. Galloway, "Total Dose Radiation-Effects Simulation Using Three-Carrier Transport in SiO2," in Government Microcircuit Applications Conference (GOMAC) Digest of Papers, Vol. XXIV, p. 758-761 (1999).  (ITAR)
  36. J.F. Conley, Jr. and P.M. Lenahan, "Predicting Radiation Hardness from Process Parameters:  A 'First-Principles' Model of Oxide Charging," in Government Microcircuit Applications Conference (GOMAC) Digest of Papers, Vol. XXIII, p. 578-581 (1998).  (ITAR)
  37. J.F. Conley, Jr., W.F. McArthur, and P.M. Lenahan, "A Preliminary Investigation of the Kinetics of Post-Oxidation Anneal Induced E' Precursor Formation," in the IEEE International Integrated Reliability Workshop (IRW) Final Report, IEEE #98TH8363, p. 62-67 (1998).
  38. J.F. Conley, Jr., "Confirmation of a Predictive Process Dependent Model of Oxide Charging," in the IEEE 1997 International Integrated Reliability Workshop (IRW) Final Report, IEEE #97TH8319, p. 138-139 (1997).
  39. [INVITED] P.M. Lenahan and J.F. Conley, Jr., "A Physically Based Model of Charge Trapping in Gate Oxides," in Silicon Nitride and Silicon Dioxide Thin Insulating Films, M.J. Deen, W.D. Brown, K.B. Sundaram, and S.I Raider, eds., Electrochem. Soc. Proc. Vol. 97-10, p. 275-284 (The Electrochemical Society, Pennington, NJ, 1997).
  40. J.F. Conley, Jr., P.M. Lenahan, and P. Cole, "Predictive Model of SOI Buried Oxide Charging Based on Statistical Mechanics and Spin Resonance Data," proceedings of the 1997 IEEE International SOI Conference, p. 176-7 (1997).
  41. [INVITED] J.F. Conley, Jr. and P.M. Lenahan, "A Review of Electron Spin Resonance Spectroscopy of Defects in Thin Film SiO2 on Si," in The Physics and Chemistry of SiO2 and the Si/SiO2 Interface 3, H.Z. Massoud, E.H. Poindexter, and C.R. Helms, eds., Electrochem. Soc. Proc. Vol. 96-1, p. 214-249 (The Electrochemical Society, Pennington, NJ, 1996).
  42. [INVITED] P.M. Lenahan and J.F. Conley, Jr., "Radiation Damage in Metal Oxide Silicon Devices:  Fundamental Understanding Developed Through Magnetic Resonance," in Proceedings of the IEEE Radiation Studies Conference (RADSCON 96), p. 89-107 (1996).
  43. J.F. Conley, Jr., P.M. Lenahan, and B.D. Wallace*, "Physically Based Predictive Model of Oxide Charging," in the IEEE 1996 International Integrated Reliability Workshop (IRW) Final Report, IEEE #96TH8215, p. 134-141 (1996).
  44. [INVITED] J.F. Conley, Jr., "Application of Electron Spin Resonance as a Tool for Building in Reliability," in Materials Reliability in Microelectronics VI, W.F. Filter, J.J. Clement, A.S. Oates, R. Rosenberg, and P.M. Lenahan, eds., Mat. Res. Soc. Proc. Vol. 428, p. 293-315 (The Materials Research Society, Pittsburgh, PA, 1996).
  45. J.F. Conley, Jr., P.M. Lenahan, and B.D. Wallace*, "Electron Spin Resonance Characterization of Unibond Material," proceedings of the 1996 IEEE International SOI Conference, p. 164-5 (1996).  (Extended abstract)
  46. J.F. Conley, Jr. and P.M. Lenahan, “Electron Spin Resonance Evidence for a Localized EP Defect Structure,” in Defect and Impurity Engineered Semiconductors and Devices, S. Ashok, J. Chevallier, I. Akasaki, N. M. Johnson, and B. L. Sopori, eds. Mat. Res. Soc. Proc. Vol. 378, p. 377-382 (The Materials Research Society, Pittsburgh, PA, 1995).
  47. R.K. Lowry, H.L. Evans, W.L. Schultz, T.J. Morthorst, P.M. Lenahan, and J.F. Conley, Jr., "Electron Spin Resonance Characterization of Electrically Active Oxide Defects," in Proceedings of the 20th International Symposium for Testing and Failure Analysis (ISTFA), Los Angeles, CA, p. 33-40 (1994).
  48. J.F. Conley, Jr., P.M. Lenahan, R.K. Lowry, H.L. Evans, and T.J. Morthorst, "The Roles of Several E' Variants in Thermal Gate Oxide Reliability," in Materials Reliability in Microelectronics IV, Mat. Res. Soc. Proc. Vol. 138, pp. 37-42 (Materials Research Society, Pittsburgh, PA, 1994).
  49. J.F. Conley, Jr., P.M. Lenahan, R.K. Lowry, H.L. Evans, and T.J. Morthorst, "Characterization of Two E' Center Charge Traps in Conventionally Processed Thermal SiO2 on Si," in ESSDERC 94:  Proceedings of the 24th European Solid State Device Research Conference, edited by C. Hill and P. Ashburn (Editions Frontieres, London, 1994) pp. 309-312.
  50. H.L. Evans, R.K. Lowry, W.L. Schultz, T.J. Morthorst, P.M. Lenahan, J.F. Conley, Jr., "Enhancing Reliability of CMOS Devices Using Electrical Techniques and Electron Spin Resonance," in Proceedings of the 32nd Annual IEEE International Reliability Physics Symposium, San Jose, CA, p. 410-419 (1994).
  51. P. Roitman, S. Mayo, D. Simons, S.J. Krause, J.C. Park, J.D. Lee, D. Venables, P.M. Lenahan, and J.F. Conley, "Effect of Nitrogen Ambients During High Temperature SIMOX Annealing," in SOI Technology and Devices (6th International Symposium), S. Cristoloveanu, ed., Electrochem. Soc. Proc. Vol. 94-11, pp. 92-97 (The Electrochemical Society, Pennington, NJ, 1994).
  52. J.F. Conley, Jr., P.M. Lenahan, and P. Roitman, "Electron Traps, Structural Change, and Hydrogen Related SIMOX Defects," proceedings of the 1992 IEEE International SOI Conference, p. 26-27 (1992).  (Extended abstract)
  53. J.F. Conley, Jr., P.M. Lenahan, and P. Roitman, "ESR Study of E' Trapping Centers in SIMOX Oxides," proceedings of the 1991 IEEE International SOI Conference (October, 1991), p. 12-13.  (Extended abstract)
  54. J.F. Conley, P.M. Lenahan, and P. Roitman, "Electron Spin Resonance Study of Trapping Centers in SIMOX Buried Oxides," in Insulating Films on Semiconductors 1991, edited by W. Eccleston and M. Uren (Adam Higler, Bristol, 1991), p. 259-262.
  55. J.F. Conley, Jr. and P.M. Lenahan, "Direct Experimental Evidence for a Dominant Hole Trapping Center in SIMOX Oxides," proceedings of the 1990 IEEE International SOI Conference (October, 1990), p. 164-5.  (Extended abstract)

C1.4.  Other Peer-Reviewed Publications

The following papers appeared in proceedings that were distributed primarily to attendees (as CDs, printed volumes, availability through a public website, etc.).   

  1. J.F. Conley, Jr. and N. Alimardani, "Step Tunneling Enhanced Metal-Insulator-Insulator-Metal (MIIM) Tunnel Diodes," presented at the International Symposium on Advanced Nanodevices and Nanotechnology  (ISANN) 2014, Poipu, Kuaii, Dec. 2013.
  2. T. Klarr, D. Austin, N. Alimardani, and J.F. Conley, Jr., "Electrical Stressing of HfO2/Al2O3 Bilayer Metal-Insulator-Insulator-Metal Diodes," presented at the IEEE International Integrated Reliability Workshop (IIRW), Lake Tahoe, CA, Oct. 2013.
  3. [Best Poster Nominee!] Sean W. Smith, Wei Wang, David Matthews, Douglas A. Keszler, and John F. Conley Jr., "Comparison of Solution Based Prompt Inorganic Condensation of Al2O3 with Atomic Layer Deposition," presented at the 2013 MRS Fall Meeting, Boston, MA, Dec. 2013.
  4. Sean W. Smith, Wei Wang, David Matthews, Douglas A. Keszler, and John F. Conley Jr., "Comparison of Al2O3 Deposited via Prompt Inorganic Condensation vs. Atomic Layer Deposition," presented at the 60th Meeting of the American Vacuum Society, Los Angeles, CA, Oct. 2013.
  5. N. Alimardani and J.F. Conley, Jr., "Investigation of the Dominant Conduction Mechanisms in Metal-Insulator-Metal Tunnel Diodes with Ta2O5 and Nb2O5 Dielectrics Deposited by Atomic Layer Deposition," presented at the 60th Meeting of the American Vacuum Society, Los Angeles, CA, Oct. 2013.
  6. N. Alimardani and J.F. Conley, Jr., "Investigation of ALD Dielectrics and Nanolaminates for Rectenna Based Energy Harvesting Applications," presented at the American Vacuum Society 13th International Conference on Atomic Layer Deposition, San Diego, CA, July 2013.
  7. D.Z. Austin, S.W. Smith, D. Allman, D. Price, S. Hose, M. Saly, and J.F. Conley, Jr. "Characterization of Bismuth Oxide Deposited by Atomic Layer Deposition Using Bi(OCMe2iPr)3 and H2O," presented at the American Vacuum Society 13th International Conference on Atomic Layer Deposition, San Diego, CA, July 2013.
  8. N. Alimardani and J.F. Conley, Jr., "Step Tunneling Enhanced Asymmetry in Metal-Insulator-Insulator-Metal (MIIM) Diodes," oral presentation at the 2013 Materials Research Society Electronic Materials Conference, South Bend, IN, June 2013.
  9. John Simonsen, Sean Smith, Christian Beusch, John Conley, "Improved temperature stability of atomic layer deposition coated cellulose nanocrystal aerogels," presented at the 245th American Chemical Society Meeting, New Orleans, LA, April, 2013.
  10. Sean Smith, Christian Buesch, Dave Matthews, John Simonsen, and John Conley, "Atomic Layer Deposition on Cellulose Nanocrystal Aerogels, presented at the Tappi International Conference on Nanotechnology for Renewable Materials, Stockholm, Sweden, June, 2013.
  11. N. Alimardani and J.F. Conley, Jr. "Engineering Asymmetry in Metal-Insulator-Insulator-Metal (MIIM) Tunnel Diodes, presented at the 43rd IEEE Semiconductor Interface Specialists Conference (SISC), San Diego, CA, Dec. 2012, 2 pgs. (Extended abstract).
  12. [INVITED] J.F. Conley Jr., "Resistive Switching in Zinc-Tin-Oxide and Atomic Layer Deposition of Nanolaminates for Amorphous Oxide Semiconductor Thin Film Transistors," presented at the 222nd Meeting of the Electrochemical Society (ECS), Honolulu, HI, October 2012, 1 pg. (Abstract).
  13. S.W. Smith, J.F. Conley Jr., H. Chan, and J. Simonsen, "Improved Temperature Stability of Atomic Layer Deposition Coated Cellulose Nanocrystal Aerogels," AVS-ALD 2012 / Baltic-ALD 2012 Conference, Dresden, Germany, June 2012.
  14. S. Murali, J.S. Rajachidambaram, S.Y. Han, C.H. Chang, G.S. Herman, and J.F. Conley, Jr., "Resistive Switching in Amorphous Zinc-Tin-Oxide," Workshop on Dielectrics in Microelectronics (WoDiM), Dresden, Germany, June 2012.
  15. N. Alimardani*, E.W. Cowell III*, J.F. Wager, and J.F. Conley, Jr., "Fabrication and Investigation of Metal-Insulator-Insulator-Metal (MIIM) Tunnel Diodes Using Atomic Layer Deposition," 221st Meeting of the Electrochemical Society (ECS), Seattle, WA, May 2012, 1 pg. (Abstract).
  16. S.W. Smith, J.F. Conley Jr., H. Chan, and J. Simonsen, "Improved Temperature Stability of Atomic Layer Deposition Coated Cellulose Nanocrystal Aerogels," 2012 Spring Meeting of the Materials Research Society, San Francisco, CA, April 2012, 1 pg. (Abstract)
  17. S. Murali, J.S. Rajachidambaram, S.Y. Han, C.H. Chang, G.S. Herman, and J.F. Conley, Jr., "Bipolar Memresistive Switching in Zinc-Tin-Oxide," 2012 Spring Meeting of the Materials Research Society, San Francisco, CA, April 2012, 1 pg. (Abstract)
  18. A. Mason*, C.-C. Huang*, M.T. Koesdjojo*, N. Stephon*, V.T. Remcho, and J.F. Conley, Jr., "Functionalization and Environmental Stabilization of ZnO Nanobridge Sensors for Liquid and Vapor Phase Sensing using Parylene-A," Nano Today 2011 Conference, Waikoloa Beach, HI, Dec. 2011.
  19. G. Herman, J. Rajachidambaram*, M. Rajachidambaram*, S.-Y. Han, C.-H. Chang, S. Murali,* and J. Conley, "Transparent Oxide Semiconductors: Recent Material Developments and New Applications," presented at the IEEE Photonics 2011 Conference, Arlington, VA, Oct. 2011,
  20. G.S. Herman, J.S. Rajachidambaram*, S. Murali*, J. Conley, S.P. Sanghavi, P. Nachimuthu, V. Shutthanandan, T. Varga, and S. Thevuthasan, "Application of Amorphous Zinc Tin Oxide for Memristor Devices," presented at the AVS 58th Annual International Symposium and Exhibition, Nashville, TN, October 30, 2011.
  21. N. Alimardani*, E.W. Cowell III*, J.F. Wager, and J.F. Conley, Jr., "Investigation of Dual Dielectric Stacks on Metal-Insulator-Metal (MIM) Tunnel Diode Operation," presented at the American Vacuum Society (AVS) 11th International Conference on Atomic Layer Deposition, Boston, MA, July 2011, 1 pg. (Abstract)
  22. S.W. Smith* and J.F. Conley, Jr., "Nucleation laminate: A method for measuring few-cycle growth in multicomponent ALD systems with substrate inhibited growth effects," presented at the American Vacuum Society (AVS) 11th International Conference on Atomic Layer Deposition, Boston, MA, July 2011, 1 pg. (Abstract)
  23. A.D. Mason*, C.-C. Huang*, C. Heist*, M. T. Koesdjojo*, N. Stephon*, V.T. Remcho, and J. F. Conley, Jr., "Environmental Stabilization and Functionalization of ZnO Nanobridge Sensors Fabricated using Carbonized Photoresist," presented at the Minerals, Metals, and Materials Society (TMS) 53nd Electronic Materials Conference, Santa Barbara, CA, June 2011. (O) 2 pgs. (Abstract)
  24. N. Alimardani*, E. W. Cowell III*, J.F. Wager, and J.F. Conley, Jr., "Investigation of Electrode Roughness and High-k Dielectric Barrier on Metal-Insulator-Metal Tunnel Diode Operation," presented at the Minerals, Metals, and Materials Society (TMS) 53nd Electronic Materials Conference, Santa Barbara, CA, June 2011. (O) 2 pgs. (Abstract)
  25. N. Bauer*, M. Wang*, S.W. Smith*, J.C. Mitchell, and J.F. Conley, Jr., "Nanomechanical Characterization of Atomic Layer Deposition Coatings for Biomedical Applications," presented at the 38th International Conference on Metallurgical Coatings and Thin Films, San Diego, CA, May 2011. 1 pg. (Abstract)
  26. A.D. Mason*, C.-C. Huang*, S. Kondo*, M. T. Koesdjojo*, N. Stephon*, V.T. Remcho, and J. F. Conley, Jr., "Functionalization and Environmental Stabilization of ZnO Nanobridge Sensors Fabricated using Carbonized Photoresist," 2011 Spring Meeting of the Materials Research Society, San Francisco, CA, April 2011, 1 pg. (Abstract)
  27. G.R Werner*, S.W. Smith*, J.F. Conley, Jr., J.C Mitchell, "Atomic Layer Deposition Coated Orthodontic Archwires to Reduce Coefficient-of-Friction," presented at the 40th Annual Meeting of the American Association for Dental Research (AADR), San Diego, CA, March 2011. (O) 1 pg. (Abstract)
  28. T. Waggoner*, J. Triska*, K. Hoshino*, J.F. Wager, and J.F. Conley, Jr. "Zirconium Aluminum Oxide Nanolaminate Gate Dielectric for Amorphous Oxide Semiconductor Thin Film Transistors," 38th Conference on the Physics and Chemistry of Surfaces and Interfaces (PCSI-38), Jan. 2011, 3 pgs. (Extended abstract)
  29. T.W. Waggoner*, J.T. Triska*, J.F. Conley, Jr., K. Hoshino*, R. Presley, and J.F. Wager, "Zinc-Tin-Oxide Thin-Film-Transistors with Al2O3 and ZrO2 Gate Dielectrics," presented at the Minerals, Metals, and Materials Society (TMS) 52nd Electronic Materials Conference, South Bend, IN, June 2010. (O) 2 pgs. (Abstract)
  30. A. Mason*, C.C. Huang*, J.F. Conley, Jr., M. Koesdjojo*, S. Kondo*, and V. Remcho, "Protection of ZnO Nanowires for Liquid-Phase Sensing," presented at the Minerals, Metals, and Materials Society (TMS) 52nd Electronic Materials Conference, South Bend, IN, June 2010. (O) 2 pgs. (Abstract)
  31. G.L. Smith, R.G. Polcawich, J.S. Pulskamp, T. Waggoner*, and J.F. Conley, Jr., "Atomic Layer Deposited Alumina for use as an Etch Barrier Against Xenon Difluoride Etching," Hilton Head 2010: Solid State Sensors, Actuators, and Microsystems Workshop," Hilton Head, SC, June 2010, 2 pgs. (42%)
  32. I. Jewell*, C.-C. Huang*, S. Smith*, A. Mason*, A. Jander, and J.F. Conley, Jr., "In-situ Resistive Measurements of Graphite Oxide Reduction for Spin-Transport Based Devices," Spring meeting of the Materials Research Society, San Francisco, CA, April, 2010.
  33. S. Azimi*, S.W. Smith*, J.F. Conley, Jr., J.C. Mitchell, "Nanomechanical Testing of ALD Coatings for Dental and Orthopaedic Applications," presented at the 39th Annual Meeting of the American Association for Dental Research, Washington, DC, March 2010. (O) 1 pg. (Abstract)
  34. T. Waggoner* and J.F. Conley, Jr., "Resistive Switching in Atomic Layer Deposited ZnO and TiO2 Films,"2010 March Meeting of The American Physical Society (APS), Portland, OR, Mar. 2010, Vol. 55, 1 pg. (Abstract)
  35. I. Jewell*, C.-C. Huang*, S.W. Smith*, A. Mason*, A. Jander, and J.F. Conley, Jr., "In-situ Resistive Measurements of Graphite Oxide Reduction for Spin-Transport Based Devices,"2010 March Meeting of The American Physical Society (APS), Portland, OR, Mar. 2010, 1 pg. (Abstract)
  36. S. Murali*, V. Ng*, C.-C. Huang*, and J.F. Conley, Jr., "Dielectrophoretic Alignment of ZnO Nanowires,"2010 March Meeting of The American Physical Society (APS), Portland, OR, Mar. 2010, 1 pg. (Abstract)
  37. N. Alimardani*, J.F. Conley, Jr., S. Kilpatrick, and M. Dubey, "Atomic Layer Deposited Ta2O5/Al2O3, ZrO2/Al2O3 and ZrO2/Ta2O5 as Dual Dielectric MIIM Diodes for Rectenna Applications," 2010 March Meeting of The American Physical Society (APS), Portland, OR, Mar. 2010, 1 pg. (Abstract)
  38. S.W. Smith* and J.F. Conley, Jr.,"Atomic Layer Deposited Aluminum Oxide / Tantalum Oxide Laminate Films," 2010 March Meeting of The American Physical Society (APS), Portland, OR, Mar. 2010, 1 pg. (Abstract)
  39. A. Mason*,  C.-C. Huang*, B. Pelatt*, and J.F. Conley, Jr., "Directed Growth of ZnO Nanobridge Sensors using Carbonized Photoresist," 2010 March Meeting of The American Physical Society (APS), Portland, OR, Mar. 2010, 1 pg. (Abstract)
  40. J. Triska*, J.F. Conley, Jr., R. Presley, and J.F. Wager, "Bias Stability of Zinc-Tin-Oxide Thin Film Transistors with Al2O3 Gate Dielectrics," 37th Conference on the Physics and Chemistry of Surfaces and Interfaces (PCSI-37), Jan. 2010, 3 pgs. (Extended abstract)
  41. [INVITED] S.W. Smith*, K.G. McAuliffe,* and J.F. Conley, Jr., "Atomic Layer Deposited High-k Nanolaminate Capacitors," Proceedings of the 14th US-Japan Seminar on Dielectric and Piezoelectric Materials, pgs. 52-55 (2009).
  42. S.W. Smith*, J.F. Conley, Jr, Kyle Malloy*, and J.C. Mitchell, "Atomic Layer Deposition of Conformal Oxide Coatings on Stainless Steel,"  AVS 9th International Conference on Atomic Layer Deposition, Monterey, CA, July 2009, 1 pg. (Abstract)
  43. C. Zhan, P. Schuele, J. Conley, and J. Hartzell, "A Novel Crystallized Silicon Thin Film Transistor Based Piezoresistive Cantilever Label-Free Biosensor," American Vacuum Society 54th International Symposium, Seattle, WA, Oct. 2007, 1 pg. (Abstract)
  44. J.M. Green*, T. Gutu*, L. Dong, J. Jiao, J.F. Conley, Jr., and Y. Ono, "Electron Microscopy Characterization of Al2O3 and ZnO Coated Carbon Nanotubes,"  Micro-Nano Breakthrough Conference, Vancouver, WA, June 2006, 1 pg. (Abstract)
  45. J.F. Conley, Jr., J.M. Green*, L. Dong*, J. Jiao, and Y. Ono, "Field Emission Induced UV Electroluminescence from Atomic Layer Deposition ZnO Coated Carbon Nanotubes,"  Electronic Materials Conference, State College, PA, June 2006, 1 pg. (Abstract)
  46. J.M. Green*, T. Gutu*, L. Dong, J. Jiao, J.F. Conley, Jr., and Y. Ono, "Enhanced Field Emission and Morphology of Atomic Layer Deposition ZnO Coated Carbon Nanotubes,"  2006 Spring Meeting of the Materials Research Society, San Francisco, CA, April 2006, 1 pg. (Abstract)
  47. J.T. Ryan*, P.M. Lenahan, A.Y. Kang*, J.F. Conley, Jr., G. Bersuker, P. Lysaght, "Identification of the atomic scale defects involved in radiation damage in HfO2 based MOS devices,"  IEEE Nuclear and Space Radiation Effects Conference (NSREC), Seattle, WA, July 2005, 1 pg. (Abstract)
  48. J.T. Ryan*, P.M. Lenahan, T.G. Pribicko*, G. Bersuker, P. Lysaght, J. Barnett, J. Conley, "Electron Paramagnetic Resonance Studies of Hafnium Oxide MOS Structures,"  Electronic Materials Conference, Santa Barbara, CA, June 2005, 1 pg. (Abstract)
  49. J.F. Conley, Jr., Y. Ono, and L. Stecker, "Directed Assembly of ZnO Nanobridges on a Si Substrate using a ZnO Seed Layer,"  Electronic Materials Conference, Santa Barbara, CA, June 2005, 1 pg. (Abstract)
  50. J.T. Ryan*, J.P. Campbell*, T.G. Pribicko*, P.M. Lenahan, J.F. Conley and W. Tsai, "Paramagnetic Centers in Hafnium Oxide Films on Silicon," Advanced Gate Dielectric Stacks on High-Mobility Semiconductors Session, 2005 Spring Meeting of the Materials Research Society, San Francisco, CA, March 2005, 1 pg. (Abstract)
  51. J.F. Conley, Jr., L. Stecker, and Y. Ono, "Growth of ZnO Nanowires Selectively on a Si Substrate without a Metal Catalyst," Chemistry of Nanomaterial Synthesis and Processing at the 2005 Spring Meeting of the Materials Research Society, San Francisco, CA, March 2005, 1 pg. (Abstract)
  52. J. Ryan*, J. Campbell*, T. Pribicko*, P. Lenahan, J. Conley, and W. Tsai, "Paramagnetic Centers in Hafnium Oxide Films on Silicon," March 2005 Meeting of The American Physical Society (APS), Portland, OR, Mar. 2005, Bulletin of the American Physical Society, W14.7, 1 pg. (Abstract)
  53. H.G. McWhinney, J.F. Conley, T.N. Fogarty, L. Trombetta, R. Wilkins, T. L.Grady, M. Bibbs, and R. Dwevedi, "Characterization of Hafnium Oxide Films on Silicon Using X-Ray Photoelectron Spectroscopy," Pittsburgh Conference and Exposition on Analytical Chemistry and Applied Spectroscopy, Orlando, FL, Feb./Mar. 2005, 1 pg. (Abstract)
  54. M. Dautrich*, P.M. Lenahan, J.F. Conley, Jr., and A.Y. Kang, "Non-Invasive Nature of Corona Charging on Thermal Si/SiO2 Structures; an Electron Spin Resonance Study," 34th IEEE Semiconductor Interface Specialists Conference (SISC) Abstracts, December 2003, 2 pgs. (Extended abstract)
  55. A.Y. Kang*, P.M. Lenahan, J.F. Conley, Jr., and Y. Ono, "Physical Structure of Trapped Electrons in Atomic Layer Deposited Hafnium Oxide using Hf(NO3)4 Precursor," IEEE Semiconductor Interface Specialists Conference (SISC) Abstracts, San Diego, CA, December 2003, 2 pgs. (Extended abstract)
  56. J.F. Conley, Jr., Y. Ono, R. Solanki, Douglas Tweet, G. Stecker, and W.W. Zhuang, "Alternating Pulse Deposition of Metal Oxide Thin Films using Hf(NO3)4 as both a Metal and an Oxygen Source,"  2003 AVS Topical Conference on Atomic Layer Deposition, San Jose, CA, July 2003, 1 pg. (Abstract)
  57. A.Y. Kang*, P.M. Lenahan, and J.F. Conley, Jr., "Charge trapping in atomic layer deposited hafnium oxide on silicon,"  2003 TMS Electronic Materials Conference (EMC), Salt Lake City, UT, June 2003, 1 pg. (Abstract)
  58. A.Y. Kang*, P.M. Lenahan, and J.F. Conley, Jr., "The Interface of HfO2/Si Deposited via ALD using Hf(NO3)4 Precursor," 33rd IEEE Semiconductor Interface Specialists Conference (SISC) December 2002, 2 pgs. (Extended abstract)
  59. P.M. Lenahan, A.Y. Kang*, and J.F. Conley, Jr., "Reliability Problems in a High-k Dielectric System:  HfO2/Si,"  2002 IEEE Microelectronics Reliability and Qualification Workshop (MRQW), Manhattan Beach, CA, December 2002, 2 pgs. (Extended abstract)
  60. J.F. Conley, Jr., R. Solanki, G. Stecker, L. Charneski, W. Zhuang, D. Tweet, L. Stecker, W. Gao, and Y. Ono, "ALD of HfO2 on a New Modulated Temperature Tool using Hf(NO3)4,"  2002 AVS Topical Conference on Atomic Layer Deposition, Seoul, Korea, August 2002, 1 pg. (Abstract)
  61. A.Y. Kang*, P.M. Lenahan, and J.F. Conley, Jr., "Identification of Paramagnetic Defects at the Hafnium/Silicon Interface"  Rocky Mountain Conference on Analytical Chemistry, Denver, CO, July 2002, 1 pg. (Abstract)
  62. A.Y. Kang*, P.M. Lenahan, and J.F. Conley, Jr., "The Radiation Response of the High Dielectric Constant Hafnium Oxide / Silicon System,"  IEEE Nuclear and Space Radiation Effects Conference (NSREC), Phoenix, AZ, July 2002, 1 paragraph. (Abstract)
  63. A.Y. Kang*, P.M. Lenahan, and J.F. Conley, Jr., "An Electron Spin Resonance Observation of Hafnium Oxide Films for Advanced Gate Dielectrics,"  Electronic Materials Conference (EMC), Santa Barbara, CA, June 2002, 1 pg. (Abstract)
  64. W. Zhuang, J.F. Conley, Jr., Y. Ono, D.R. Evans, and R. Solanki, "Hafnium Nitrate Precursor Synthesis and Hafnium Oxide Thin Film Properties,"  14th International Symposium on Ferroelectrics, Nara, Japan, May 2002, 1 pg. (Abstract)
  65. J.F. Conley, Jr., J.S. Suehle, A.H. Johnston, B. Wang*, T. Miyahara, and E.M. Vogel, "Heavy Ion Induced Soft Breakdown of Thin Gate Oxides,"  IEEE Nuclear and Space Radiation Effects Conference (NSREC), Vancouver, B.C., July 2001, 1 pg. (Abstract) Nominated for Best Paper.
  66. A. Vandooren, J.F. Conley, Jr., S. Cristoloveanu, M. Mojarradi, E. Kolowa, "Degradation Mechanisms in SOI n-channel LDMOSFETs,"  22nd Insulating Films on Semiconductors (INFOS), Italy, Spring 2001, 2 pgs. (Extended abstract)
  67. J.S. Suehle, T. Meyers, and J.F. Conley, Jr., “The Effects of Ionizing Radiation on Wear-Out and Reliability of Thin Gate Oxides,”  2000 IEEE Microelectronics and Reliability and Qualification Workshop, Glendale, CA, November 2000, 2 pgs. (Abstract)
  68. C.J. Nicklaw*, M.P. Pagey, S.T. Pantelides, D.M. Fleetwood, R.D. Schrimpf, K.F. Galloway, J.E. Wittig, B.M. Howard, E. Taw, W. H. McNeil, and J.F. Conley, Jr., "Defects and Nanocrystals Generated by Si Implantation into a-SiO2,"  IEEE Nuclear and Space Radiation Effects Conference (NSREC), Reno, NV, July 2000, 1 pg. (Abstract)
  69. J.F. Conley, Jr, C.J. Nicklaw, and E. Taw, "Investigation of Implant and Anneal Modified Thermally Grown SiO2," 42nd Electronic Materials Conference (EMC), Denver, CO, June 2000, 1 pg. (Abstract)
  70. P.M. Lenahan, J.J. Mele, J.F. Conley, Jr., R.K. Lowry, and D. Woodbury, "Predicting Radiation Response from Process Parameters:  Verification of a Physically Based Predictive Model,"  IEEE Nuclear and Space Radiation Effects Conference (NSREC), Norfolk, VA, July 1999, 1 pg. (Abstract)
  71. J.F. Conley, Jr. and P.M. Lenahan, "Physically Based Predictive Model for Radiation Hard MOS Devices," presented by P.M. Lenahan at the 1999 NASA/JPL Conference on Electronics for Extreme Environments," Pasadena, CA, February 1999, 2 pgs.
  72. J.F. Conley, Jr., W.F. McArthur, and P.M. Lenahan, "A Preliminary Investigation of the Kinetics of Post-Oxidation Anneal Induced E' Precursor Formation," presented at the 29th IEEE Semiconductor Interface Specialists Conference (SISC) Abstracts, December 1998, 2 pgs. (Extended abstract)
  73. P.M. Lenahan and J.F. Conley, Jr., "A Physically Based Predictive Model for the Generation of Paramagnetic Centers at the Si/SiO2 Boundary of MOS Transistors,"  40th Rocky Mountain Conference on Analytical Chemistry, Denver, CO, July 1998, 1 pg. (Abstract)
  74. P.M. Lenahan and J.F. Conley, Jr., "A Comprehensive Physically Based Model for Radiation Damage in MOS Systems,"  IEEE Nuclear and Space Radiation Effects Conference (NSREC), Newport Beach, CA, July 1998, 1 pg. (Abstract) Nominated for Best Paper.
  75. P.M. Lenahan and J.F. Conley, Jr., "A Physically Based Predictive Model for Generation of Interface Traps at the Si/SiO2 Boundary,"  March Meeting of the American Physical Society, Los Angeles, CA, March 1998, Bulletin of the American Physical Society 43(1), Q23.10, pg. 639 (Abstract)
  76. P.M. Lenahan and J.F. Conley, Jr., "A Process Dependent Predictive Model of Charge Trapping in the SiO2 Bulk,"  39th Rocky Mountain Conference on Analytical Chemistry, Denver, CO, July 1997, 1 pg. (Abstract)
  77. J.F. Conley, Jr., P.M. Lenahan, B.D. Wallace, and P. Cole, "Quantitative Model of Radiation Induced SiO2 Charge Trapping,"  IEEE Nuclear and Space Radiation Effects Conference (NSREC), Snowmass Village, CO, July 1997, 1 pg. (Abstract)
  78. J.F. Conley, Jr., P.M. Lenahan, and B.D. Wallace, "Electron Spin Resonance Characterization of Trapping Centers in Unibond Buried Oxides,"  IEEE Nuclear and Space Radiation Effects Conference (NSREC), Indian Wells, CA, July 1996, 1 pg. (Abstract)
  79. J.F. Conley, Jr., P.M. Lenahan, A.J. Lelis, and T.R. Oldham, “Electron Spin Resonance Evidence that E’g Centers Can Behave as Switching Oxide Traps,”  IEEE Nuclear and Space Radiation Effects Conference (NSREC), Madison, WI, July 1995, 1 pg. (Abstract)
  80. J.F. Conley, Jr. and P.M. Lenahan, "H2 Interactions with EP Centers:  Implications for EP Structure,"  Spring Meeting of the Materials Research Society, San Francisco, CA, April 1995, 1 pg. (Abstract)
  81. J.F. Conley, Jr. and P.M. Lenahan, "Predicting Radiation Hardness from Process Parameters:  A 'First-Principles' Model of Oxide Charging,"  Virtual Wafer Fabrication Session, Hardened Electronics and Radiation Technology (HEART) Conference, Arlington, VA, March 1998. (O)  (Classified)
  82. J.F. Conley, Jr., P.M. Lenahan, A.J. Lelis, and T.R. Oldham, “Electron Spin Resonance Evidence for the Structure of a Switching Oxide Trap,” IEEE Semiconductor Interface Specialists Conference (SISC) Abstracts, December 1995, 2 pgs. (Extended abstract)
  83. J.F. Conley, Jr. and P.M. Lenahan, “Implications for the Structure of a Radiation Damage Center in Thermally Grown Gate and SIMOX Buried Oxides,”  IEEE Nuclear and Space Radiation Effects Conference (NSREC), Madison, WI, July 1995, 1 pg. (Abstract)
  84. J.F. Conley, Jr. and P.M. Lenahan, "Hydrogen Complexed EP Centers and EP/H2 Interactions:  Implications for EP Structure,"  Insulating Films on Semiconductors (INFOS) Conference, Grenoble, France, June 1995, 2 pgs. (Extended abstract)
  85. J.F. Conley, Jr., P.M. Lenahan, R.K. Lowry, H.L. Evans, and T.J. Morthorst, "Electron Spin Resonance Detection of a New Hole Trapping Defect in Thin Film Thermally Grown SiO2 on Si," IEEE Semiconductor Interface Specialists Conference (SISC), December 1994, 2 pgs. (Extended abstract)
  86. R.K. Lowry, H.L. Evans, W.L. Schultz, T.J. Morthorst, P.M. Lenahan, and J.F. Conley, Jr., "Electron Spin Resonance Characterization of Electrically Active Oxide Defects," presented by R.K. Lowry at the 20th International Symposium for Testing and Failure Analysis (ISTFA), Los Angeles, CA, November, 1994, 2 pgs. (Extended abstract)
  87. J.F. Conley, Jr., P.M. Lenahan, R.K. Lowry, H.L. Evans, and T.J. Morthorst, "Characterization of Two E' Center Charge Traps in Conventionally Grown Thermal SiO2 on Si,"  24th European Solid State Device Research Conference (ESSDERC), Edinburgh, Scotland, September 1994, 2 pgs. (Extended abstract)
  88. J.F. Conley, Jr., P.M. Lenahan, R.K. Lowry, H.L. Evans, and T.J. Morthorst, "ESR Study of Three E' Variants in Microelectronic Quality Thin Film Thermal SiO2 on Si," presented by P.M. Lenahan at the 36th Rocky Mountain Conference on Analytical Chemistry, Denver, CO, August 1994, 1 pg. (Abstract)
  89. J.F. Conley, Jr., P.M. Lenahan, R.K. Lowry, H.L. Evans, and T.J. Morthorst, "Characterization of Several E' Center Charge Traps in Conventionally Grown Thermal SiO2 on Si,"  IEEE Nuclear and Space Radiation Effects Conference (NSREC), Tucson, AZ, July 1994, 1 pg. (Abstract)
  90. J.F. Conley, Jr., P.M. Lenahan, R.K. Lowry, H.L. Evans, and T.J. Morthorst, "Multiple E' Like Defects in Thermal Thin Film SiO2:  Additional Complications to the Oxide Charge Trapping Picture,"  March Meeting of the American Physical Society, Pittsburgh, PA, March 1994, Bulletin of the American Physical Society 39, 1 pg. (Abstract)
  91. J.F. Conley, Jr., P.M. Lenahan, R.K. Lowry, H.L. Evans, and T.J. Morthorst, "Evidence for "New" E' Defects in VUV Irradiated Thermally Grown SiO2," IEEE Semiconductor Interface Specialists Conference (SISC), December 1993, 2 pgs.
  92. J.F. Conley, Jr. and P.M. Lenahan, "Molecular Hydrogen, E' Center Hole Traps, and Radiation Induced Interface Traps in MOS Devices,"  IEEE Nuclear and Space Radiation Effects Conference (NSREC), Snowbird, Utah, July 1993, 1 pg. (Abstract)
  93. J.F. Conley, Jr. and P.M. Lenahan, "Radiation Induced Interface States and ESR Evidence for Room Temperature Interactions Between Molecular Hydrogen and Silicon Dangling Bonds in Amorphous SiO2 Films on Si,"  Insulating Films on Semiconductors (INFOS) Conference, Delft, The Netherlands, June 1993, 2 pgs. (Extended abstract)
  94. J.F. Conley, Jr. and P.M. Lenahan, "Molecular Hydrogen, E' Centers, and Pb Centers in Thin Amorphous Silicon Dioxide Films on Silicon,"  35th Rocky Mountain Conference on Analytical Chemistry, Denver, CO, July 1993, 1 pg. (Abstract)
  95. J.F. Conley, Jr. and P.M. Lenahan, "ESR Study Linking H2 and E' Hole Trapping Centers in SiO2 Thin Films on Si," presented by P.M. Lenahan at the March Meeting of the American Physical Society, Seattle, WA, March 1993, Bulletin of the American Physical Society 38(3), 1 pg. (Abstract)
  96. J.F. Conley, Jr. and P.M. Lenahan, "ESR and Room Temperature Hydrogen Interaction with Radiation Induced E' Centers," IEEE Semiconductor Interface Specialists Conference (SISC) Abstracts, December 1992, 2 pgs.
  97. J.F. Conley, Jr., P.M. Lenahan, and P. Roitman, "Evidence for a Deep Electron Trap and Charge Compensation in Separation by Implanted Oxygen Oxides,"  IEEE Nuclear and Space Radiation Effects Conference (NSREC), New Orleans, LA, July 1992, 1 pg. (Abstract)
  98. J.F. Conley and P.M. Lenahan, "Room Temperature Reactions Involving Silicon Dangling Bond Centers and Molecular Hydrogen in Amorphous SiO2 Thin Films on Silicon,"  IEEE Nuclear and Space Radiation Effects Conference (NSREC), New Orleans, LA, July 1992, 1 pg. (Abstract)
  99. J.F. Conley and P.M. Lenahan, "An ESR Study of Trapping Centers and Charge Trapping Induced Structural Change in Separation by Implanted Oxygen Buried Oxides,"  6th International Symposium on Magnetic Resonance in Colloid and Interface Science, Florence, Italy, June 1992, 2 pgs.
  100. J.F. Conley, P.M. Lenahan, and P. Roitman, "ESR Study of SIMOX Charge Trapping,"  Spring Meeting of the Materials Research Society, San Francisco, CA, April 1992, 1 pg. (Abstract)
  101. J.F. Conley, P.M. Lenahan, and P. Roitman, "Hole Trapping Centers in SIMOX Buried Oxides," IEEE Semiconductor Interface Specialists Conference (SISC), December 1991, 2 pgs. (Extended abstract)
  102. J.F. Conley and P.M. Lenahan, Electron Spin Resonance Study Comparing E' Trapping Centers in SIMOX and Thermal Oxides,"  Rocky Mountain Conference on Analytical Chemistry, Denver, CO, July 1991, 1 pg. (Abstract)
  103. J.F. Conley, P.M. Lenahan, and P. Roitman, "Electron Spin Resonance Study of E' Trapping Centers in SIMOX Buried Oxides,"  IEEE Nuclear and Space Radiation Effects Conference (NSREC), San Diego, CA, July 1991, 1 pg. (Abstract)
  104. J.F. Conley, P.M. Lenahan, and P. Roitman, "Electron Spin Resonance Study of Trapping Centers in SIMOX Buried Oxides," Insulating Films on Semiconductors (INFOS) Conference, Liverpool, England, April 1991, 2 pgs. (Extended abstract)
  105. J.F. Conley, P.M. Lenahan, and P. Roitman, "E' Centers and Hole Trapping in SIMOX Buried Oxides," March Meeting of the American Physical Society, Cincinnati, OH, March 1991, Bulletin of the American Physical Society 36(3), pg. 620. (Abstract)

C2.1.  Presentations to Professional  Groups

Invited Talks at International and National Conferences

  1. J.F. Conley Jr., "Fundamentals of Reliability and Instability Issues in Amorphous Oxide Semiconductor TFTs," to be presented at the 13th International Conference on Modern Materials and Technologies (CIMTEC), Montecatini Terme, Italy, June 8-20, 2014.
  2. J.F. Conley Jr., "Enhancing Performance of MIM and MIIM Tunnel Diodes," to be presented at the Workshop on Dielectric in Microelectronics (WODIM), Kinsale, Cork, Ireland June 9-11, 2014.
  3. J.F. Conley Jr., "Resistive Switching in Zinc-Tin-Oxide and Atomic Layer Deposition of Nanolaminates for Amorphous Oxide Semiconductor Thin Film Transistors," presented at the 222nd Meeting of the Electrochemical Society (ECS), Honolulu, HI, October 2012, 1 pg. (Abstract).
  4. G.S. Herman, J.S. Rajachidambaram, M.S. Rajachidambaram, S.-Y. Han, C.-H. Chang, S. Murali, J.F. Conley, Jr., "Transparent Oxide Semiconductors: Recent Material Developments and New Applications," 2011 IEEE Photonics Conference, Arlington, VA October, 2011.
  5. G.S. Herman, J.S. Rajachidambaram*, S. Murali*, J. Conley, S.P. Sanghavi, P. Nachimuthu, V. Shutthanandan, T. Varga, and S. Thevuthasan, "Application of Amorphous Zinc Tin Oxide for Memristor Devices," presented at the AVS 58th Annual International Symposium and Exhibition, October 30, 2011.
  6. J.F. Conley, Jr., "Atomic Layer Deposition of High-k and Nanolaminate Dielectrics for Transparent Thin Film Transistors and Metal/Insulator/Metal Tunnel Diodes," 219th Meeting of the Electrochemical Society (ECS), Montreal, QC, May 2011.
  7. J.F. Conley, Jr., "Directed Growth and Electrical Integration of ZnO Nanobridge Sensors using Lithographically Patterned Carbonized Photoresist," CMOS Emerging Technologies, Whistler, BC, June 2011.
  8. J.F. Conley, Jr., "Growth, Integration, and Application of "Greener" Nanowires", 5th Annual Greener Nanoscience Conference, Portland, OR, June 2010.
  9. J.F. Conley, Jr., "Instabilities in Oxide Semiconductor Transparent Thin Film Transistors," presented at the IEEE International Integrated Reliability Workshop (IIRW), Lake Tahoe, CA, October 2009.
  10. S.W. Smith, K.G. McAuliffe, and J.F. Conley, Jr., "Atomic Layer Deposited High-k Nanolaminate Capacitors," presented at the 14th US-Japan Seminar on Dielectric and Piezoelectric Materials, Welches, OR, October 2009.
  11. J.F. Conley, Jr., R.J. Milanowski, H. Walker, M. Pagey, W. McArthur, and C.J. Nicklaw, "Electron Spin Resonance Characterization of Defects for Oxide Model Development and Verification," Fall Meeting of the Materials Research Society, Boston, MA, December 1997.
  12. P.M. Lenahan, J.F. Conley, Jr., and B.D. Wallace, "Demonstration of a Physically Based Predictive Model for Oxide Charging," presented at the Spring Meeting of the Electrochemical Society, Montreal, Quebec, Canada, May 1997.
  13. J.F. Conley, Jr. and P.M. Lenahan, "A Review of Electron Spin Resonance Spectroscopy of Defects in Thin Film SiO2 on Si," presented at the Spring Meeting of the Electrochemical Society, Los Angeles, CA, May 1996.
  14. P.M. Lenahan and J.F. Conley, Jr., "Radiation Damage in Metal Oxide Silicon Devices:  Fundamental Understanding Developed Through Magnetic Resonance," presented at the IEEE Radiation Studies Conference (RADSCON 96), Prairie View, TX, April 1996.
  15. J.F. Conley, Jr., "Application of Electron Spin Resonance as a Tool for Building in Reliability," presented at the Spring Meeting of the Materials Research Society, San Francisco, CA, April 1996.

Invited Short Courses at International Conferences

  1. J.F. Conley, Jr., "High-k dielectrics: Materials Physics, Instabilities, Defects, and Reliability," IEEE International Integrated Reliability Workshop 2004 Tutorial Handout (23 pages).
  2. J.F. Conley, Jr., "Deposition and Defect Characterization of High-k Material," in the IEEE International Reliability Physics Symposium (IRPS) 2004 Reliability Physics Tutorial Notes, Topic 133, pg. 133.1-133.36.

Invited Talks at Universities and Institutions

  1. Oregon State University, Department of Physics, "Asymmetric Metal-Insulator-Insulator-Metal (MIIM) Tunnel Diodes and Zinc-Tin-Oxide Memristors / Resistive Random Access Memory (RRAM)," October 2012.
  2. U.S. Army Research Lab (ARL), Adelphi, MD, "Asymmetric Metal-Insulator-Insulator-Metal (MIIM) Tunnel Diodes and Zinc-Tin-Oxide Memristors / Resistive Random Access Memory (RRAM)," August 2012.
  3. National Institute of Standards and Technology (NIST), Gaithersburg, MD, "Asymmetric Metal-Insulator-Insulator-Metal (MIIM) Tunnel Diodes and Zinc-Tin-Oxide Memristors / Resistive Random Access Memory (RRAM)," August 2012.
  4. University of Oregon, Materials Science Institute, "Nanobridge Sensors, Atomic Layer Deposited Nanolaminates, and Metal-Insulator-Metal Tunnel Diodes," April 2011.
  5. U.S. Army Research Lab, Adelphi, MD, "Atomic Layer Deposition (ALD) of Thin Films for MIM Tunnel Diodes and Novel Construction of ZnO Nanobridge Devices for UV and Gas Sensing," December 2009.
  6. Michigan Tech University, Houghton, MI, "High Surface Area Applications of Atomic Layer Deposition (ALD)," Nov. 14, 2008.
  7. Pacific Northwest National Laboratory, Richland, WA, "Electronic Materials Research at OSU: Thin Films and Nanomaterials," June 25th, 2008.
  8. U.S. Army Research Lab, Adelphi, MD, "Application of Atomic Layer Deposition (ALD) for Surface Modification and Directed Growth of Nanomaterials," December 2007.
  9. National Institute of Standards and Technology (NIST), Gaithersburg, MD, "Application of Atomic Layer Deposition (ALD) for Surface Modification and Directed Growth of Nanomaterials," December 2007.
  10. Oregon State University, Department of Physics, "Nanotechnology and OSU Research Plans," October 2007.
  11. Oregon State University, Department of Materials Science, "Field Emission Induced UV Electroluminescence of Atomic Layer Deposition ZnO Coated Carbon Nanotubes and Directed Integration of ZnO Nanobridge Devices," October 2007.
  12. Montana State University, "Field Emission Induced UV Electroluminescence of Atomic Layer Deposition ZnO Coated Carbon Nanotubes and Directed Integration of ZnO Nanobridge Devices," March 2007.
  13. Sharp Labs of America, "Silicon Nanowires for Display Applications," June 2006
  14. Washington State University, Dept. of Mechanical Engineering, "Materials Limited Scaling of MOS Transistors: High-k Dielectrics and Nanotechnology," March 2004.
  15. The Pennsylvania State University, Dept. of Engr. Sci. and Mech., "Materials Limited Nano-scaling of MOS Devices: Development of a High-k Dielectric," March 2002.
  16. NASA Jet Propulsion Laboratory,"Short Course on Space Radiation Effects on Microelectronics: Total Dose Effects," Pasadena, CA, Jan. 2001.
  17. Sharp Laboratories of America, "Space Radiation Induced Damage in Commercial Microelectronic Devices," Camas, WA, Nov. 2000.
  18. Bend Research, "Space Radiation Induced Damage in Commercial Microelectronic Devices," Bend, OR, Oct. 2000
  19. Intel, "Space Radiation Induced Damage in Commercial Microelectronic Devices," Beaverton, OR, Oct. 2000.
  20. NASA Jet Propulsion Laboratory, "Development of Predictive Physics Based Defect Models for Rad-Hard TCAD," Pasadena, CA, Jan. 2000.
  21. National Semiconductor, "Predicting Radiation Hardness from Process Parameters: A 'First Principles' Model of Oxide Hole Trapping" San Jose, CA, 1999.
  22. Oregon Graduate Institute, Dept. of Electrical Engineering, "Electron Spin Resonance Identification of Electrically Active Defects in Microelectronics Materials," August 1998.
  23. SPC Global Technologies, "Consideration of Surface Preparation for Defect Based Models of Gate Oxide Reliability," Boise, ID, Spring 1998.
  24. National Institute of Standards and Technology, Ionizing Radiation Division, "Predicting Radiation Hardness from Process Parameters: A 'First Principles' Model of Oxide Hole Trapping," Gaithersburg, MD, March 1998.
  25. The Pennsylvania State University, Dept. of Engr. Sci. and Mech., "Development of Physics Based Predictive Models for Rad-Hard TCAD," April 1996.
  26. Arizona State University, Dept. of Electrical Engineering, "Electron Spin Resonance Identification of Bulk and Interface Trap Defects Defects in Amorphous SiO2 Thin Films," March 1996.
  27. Charles Stark Draper Laboratory, "Electron Spin Resonance Identification of Bulk and Interface Trap Defects Defects in Amorphous SiO2 Thin Films," Boston, MA, 1996.
  28. Dynamics Research Corporation, "Electron Spin Resonance Identification of Point Defects in Amorphous SiO2 Thin Films," November 1995.
  29. Motorola Advanced Products Research and Development Lab (APRDL), "Electron Spin Resonance as a Tool for Building in Reliability (BIR)," Austin, TX, September 1995.

C4. Patents Filed and In Process

ISSUED

  1. US Patent #8,053,266, "Piezo-diode cantilever MEMS fabrication method," C.Q. Zhan, P.J. Schuele, J.F. Conley, Jr., and J. Hartzell, issued 11/8/11.
  2. US Patent #7,763,947, "Piezo-diode cantilever MEMS," C.Q. Zhan, P.J. Schuele, J.F. Conley, Jr., and J. Hartzell, issued 7/27/10.
  3. US Patent #7,597,757, "ZnO film with C-axis orientation," J.F. Conley, Jr. and Y. Ono, issued 10/6/09.
  4. US Patent #7,589,464, "Nanotip Electrode Electroluminescence Device with Contoured Phosphor Layer", J.F. Conley, Jr., D.R. Evans, W. Gao, and Y. Ono, issued 9/15/09. 
  5. US Patent #7,528,695, " Method to manipulate selectivity of a metal oxide sensor," J.F. Conley, Jr. and Y. Ono, issued 5/5/09.
  6. US Patent #7,473,640, "Reactive gate electrode conductive barrier," J.F. Conley, Jr., Y. Ono, and W. Gao, issued 1/6/09.
  7. US Patent #7,462,499, "Carbon nanotube with ZnO asperities," J.F. Conley, Jr., Y. Ono, L. Stecker, S.T. Hsu, J.M. Green, L. Dong, J. Jiao, issued 12/9/08. 
  8. US Patent #7,442,415, "Modulated temperature method of atomic layer deposition (ALD) of high dielectric constant films," J.F. Conley, Jr., Y. Ono, and G.M. Stecker, issued 10/28/08.
  9. US Patent #7,309,621, "Method to fabricate a nanowire CHEMFET sensor device using selective nanowire deposition," J.F. Conley, Jr., Y. Ono, and L. Stecker, issued 12/18/07.
  10. US Patent #7,303,631, " Selective growth of ZnO nanostructure using a patterned ALD ZnO seed layer," J.F. Conley, Jr. and L. Stecker, issued 12/4/07.
  11. US Patent #7,208,768, "Electroluminescent device," Y. Ono, W. Gao, J.F. Conley, Jr., O. Nishio, and K. Sakiyama, issued 4/24/07.
  12. US Patent #7,199,029, "Selective deposition of ZnO nanostructures on a silicon substrate using a nickel catalyst and either patterned polysilicon or silicon surface modification," J.F. Conley, Jr, L.H. Stecker, and G.M. Stecker, issued 4/3/07.
  13. US Patent #7,192,802, "ALD ZnO seed layer for deposition of ZnO nanostructures on a Si substrate," L. Stecker, and J.F. Conley, Jr., issued 3/20/07.
  14. US Patent #7,160,819, "Method to perform selective atomic layer deposition of zinc oxide." J.F. Conley, Jr., Y. Ono, and D.R. Evans, issued 1/9/07.
  15. US Patent #7,053,009, "Nanolaminate film atomic layer deposition method," J.F. Conley, Jr., Y. Ono, and R. Solanki, issued 5/30/06.
  16. US Patent #7,029,944, "Methods of forming a microlens array over a substrate employing a CMP stop," J.F. Conley, Jr., Y. Ono, W. Gao, and D.R. Evans, issued 4/18/06.
  17. US Patent #6,930,059, "Method for depositing a nanolaminate film by atomic layer deposition," J.F. Conley, Jr., Y. Ono, and R. Solanki, issued 8/16/05.
  18. US Patent #6,875,677, "Method to control the interfacial layer for deposition of high dielectric constant films," J.F. Conley, Jr. and Y. Ono, issued 4/5/05.
  19. US Patent #6,873,048, "System and method for integrating multiple metal gates for CMOS applications," W. Gao, J.F. Conley, Jr., and Y. Ono, issued 3/29/05.
  20. US Patent #6,686,212, "Method to Deposit a Stacked High-k Gate Dielectric for CMOS Applications," J.F. Conley, Jr., Y. Ono, and R. Solanki, issued 2/3/04.

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John F. Conley, Jr.: jconley@ eecs.oregonstate.edu, ph (541)737-9874, 3089 Kelley Engineering Center