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     C1.1.  Refereed Books & Book  ChaptersJ.F.  Conley, Jr. and N. Alimardani, "Impact of Electrode Roughness on MIM  Diodes and Step Tunneling in Nano-laminate MIIM Tunnel Barriers," Ch. 5 of  Rectenna Solar Cells, G. Moddel and S. Grover, eds., (Springer, 2013). C1.2.  Refereed Journal Publications  (includes 3 invited)* = Student or post-doctoral authors 
        D.Z.  Austin, D. Allman, D. Price, S. Hose, and J.F. Conley, Jr., "Plasma  Enhanced Atomic Layer Deposition of Al2O3/SiO2  Insulator Bilayers for MIIM Capacitors," IEEE Electron Device Letters 36(5),  1-3 (2015). DOI: 10.1109/LED.2015.2412685X.  Du, C.J. Durgan, D.J. Matthews, J.R. Motley, X. Tan, K. Pholsena, L.  Árnadóttir, J.R. Castle, P.G. Jacobs, R.S. Cargill, W.K. Ward, J.F. Conley Jr.,  and G.S. Herman, "Fabrication of a Flexible Amperometric Glucose Sensor Using  Additive Processes," ECS Journal of Solid State Science and Technology, 4 (4), P3069-P3074 (2015).N. Alimardani and J.F. Conley, Jr., "Enhancing  Metal-Insulator-Insulator-Metal Tunnel Diodes by Defect Enhanced Direct  Tunneling," Appl. Phys. Lett. 105, 082902 (2014).N. Alimardani*,  S.W. King, B.L. French, Cheng Tan, Benjamin F. Lampert, and John F. Conley,  Jr., "Investigation of the  impact of insulator material on the performance of dissimilar electrode  metal-insulator-metal diodes," J. Appl  Phys. 116, 024508 (2014).S.W. Smith, C. Beusch, D.J. Matthews, J.  Simonsen, and J.F. Conley, Jr., "Improved Oxidation Resistance of Organic/  Inorganic Composite Atomic Layer Deposition Coated Cellulose Nanocrystal  Aerogels," J. Vac. Sci Tech A 32(4), 041508 (2014). DOI: 10.1116/1.4882239S.W. Smith, W. Wang, D.A. Keszler, and J.F.  Conley, Jr.," Solution  Based Prompt Inorganic Condensation and Atomic Layer Deposition of Al2O3  Films: A Side-by-Side Comparison," J. Vac. Sci Tech A 32(4), 041501  (2014).Lester  Lampert, Brittany Timonen, Sean Smith, Brittney Davidge, Haiyan Li, John F. Conley,  Jr., Jeffrey Singer, and Jun Jiao, "Amorphous Alumina Nanowire  Array Efficiently Delivers Ac-DEVD-CHO to Inhibit Apoptosis of Dendritic  Cells," Chem. Commun. 50, 1234 (2014).   DOI:10.1039/C3CC48088G. D.Z.  Austin, D. Allman, D. Price, and S. Hose, M. Saly, and J.F. Conley, Jr.,  "Atomic Layer Deposition of Bismuth Oxide using Bi(OCMe2iPr)3 and H2O,"  J. Vac. Sci. Tech. A 32(1) (2014).  DOI: 10.1116/1.4840835N. Alimardani, J. McGlone, J.F. Wager, and J.F. Conley,  Jr., "Conduction Processes in Metal-Insulator-Metal Diodes with Ta2O5  and Nb2O5 Dielectrics Deposited by Atomic Layer  Deposition, " J. Vac. Sci. Tech. A  32(1) (2014). DOI: 10.1116/1.4843555N. Alimardani and J.F. Conley, Jr., "Step  Tunneling Enhanced Asymmetry in Asymmetric Electrode Metal-Insulator-Insulator-Metal  Tunnel Diodes," Appl. Phys. Lett. 102, 143501-1 to 143501-5 (2013). DOI:  10.1063/1.4799964J.S. Rajachidambaram, S. Murali, J.F. Conley,  Jr., S.L. Golledge, and G.S. Herman, "Bipolar resistive switching in an amorphous zinc tin oxide memristive  device," J. Vac. Sci. Tech. B. 31(1), 01A104-1 to 01A104-6 (2013). DOI 10.1116/1.4767124S. Murali*, J.S. Rajachidambaram*,  S.-Y. Han*, C.-H. Chang, G.S. Herman*, and J.F. Conley,  Jr., "Resistive Switching in Zinc-Tin-Oxide," Sol. State Electronics 79, 248-252 (2013), doi:  10.1016/j.sse.2012.06.016. DOI: 10.1016/j.sse.2012.06.016C.-C.  Huang*, A.D. Mason*, J.F. Conley, Jr., C. Heist*, M.T. Koesdjojo*, V.T. Remcho,  and T. Afentakis, "Impact of Parylene-A Encapsulation on ZnO Nanobridge  Sensors and Sensitivity Enhancement via Continuous UV Illumination," J.  Elec. Mater. 41(5), 873 (2012). DOI: 10.1007/s11664-011-1867-7.N.  Alimardani*, E. W. Cowell III*, J.F. Wager, J.F. Conley, Jr., D.R. Evans, M.  Chin, S.J. Kilpatrick, and M. Dubey, "Impact of electrode roughness on  metal-insulator-metal tunnel diodes," J. Vacuum Science and Technology A  30(1), 01A113 (2012). 5 pgs.S. Murali*,  N. Prasertpalichart*, C.-C. Huang*, D. Cann, R. Yimnirun, and J.F. Conley, Jr.,  "Impedance Spectroscopy of ZnO Nanowires," J. Electrochem.  Soc. 158(10), G211-G216 (2011). 6  pgs.T.  Waggoner*, J. Triska*, K. Hoshino*, J.F. Wager, and J.F. Conley Jr.,  "Zirconium Oxide – Aluminum Oxide Nanolaminate Gate Dielectrics for  Amorphous Oxide Semiconductor Thin-Film Transistors," J. Vac. Sci. Tech. B 29(4), 04D115-1 to 04D115-7 (2011). 7  pgs.A.D.  Mason*, C.-C. Huang*, S. Kondo*, M. T. Koesdjojo*, Y.H. Tennico*, V.T. Remcho,  J. F. Conley, Jr., "Functionalization and Protection of ZnO Nanobridge  Sensors for Gas and Liquid-Phase Sensing," Sensors and Actuators B 155, 245-252 (2011). 8 pgs.E.W.  Cowell, III*, N. Alimardani*, C.C. Knutson*, J.F. Conley, Jr., D.A. Keszler,  B.J. Gibbons, and J.F. Wager, "Advancing MIM Electronics: Amorphous Metal  Electrodes," Advanced Materials 23, 74-78 (2011). 5 pgs.[INVITED] J.F.  Conley, Jr., "Instabilities in Amorphous Oxide Semiconductor Transparent  Thin Film Transistors," IEEE Trans. Device and Material Reliability 10(4), 460-475 (2010).  S.  Smith*, K. McAuliffe*, and J.F. Conley, Jr., "Atomic Layer Deposited Al2O3/Ta2O5  Nanolaminate Capacitors," Sol. Sta. Elec. 54, 1076-1082 (2010). 7 pgs  B.  Pelatt*, C.C. Huang*, and J.F. Conley, Jr., "ZnO Nanobridge Devices  Fabricated on Carbonized Photoresist," Sol. Sta. Elec. 54, 1143–1149 (2010). 7 pgsJ.  Triska*, J.F. Conley, Jr., R. Presley*, and J.F. Wager, "Positive Bias  Stress Stability of Zinc-Tin-Oxide Thin Film Transistors with Al2O3  Gate Dielectrics," J. Vacuum Science and Technology B 28(4), C5I1-C5I6  (2010). 7 pgs.C.C.  Huang*, B. Pelatt*, and J.F. Conley, Jr., "Directed Integration of ZnO  Nanobridge Sensors Using Pre-Patterned Carbonized Photoresist,"  Nanotechnology 21, 195307 (2010). 7  pgs.J.  Green*, T. Gutu*, L. Dong*, J. Jiao, J.F. Conley, Jr., and Y. Ono,  "Enhanced Field Emission from Atomic Layer Deposition (ALD) ZnO coated  CNTs," J. Appl. Phys. 99, 094308-1 to 094308-4 (2006).G.  Goncher, R. Solanki, J. R. Carruthers, J.F. Conley, Jr., and Y. Ono, "p-n  Junctions in Silicon Nanowires," J. Elec. Mat. 35(7), 1509-1512  (2006).  J.F.  Conley, Jr., L. Stecker, and Y. Ono, "Selective Growth and Directed  Integration of ZnO Nanobridge Devices on Si Substrates without a Metal Catalyst  using a ZnO Seed Layer," J. Elec. Mat. 35(4), 795-802 (2006).  [INVITED] P.M.  Lenahan and J.F. Conley, Jr., "Magnetic Resonance Studies of Trapping  Centers in High-k Dielectric Films on Silicon," IEEE Trans. on Materials  and Device Reliability 5(1), 90-102  (2005).J.F.  Conley, Jr., L. Stecker, and Y. Ono, "Directed Integration of ZnO  Nanobridge Devices on a Si Substrate," Appl. Phys. Lett. 87, 223114-1  to 223114-3 (2005).L.  Dong*, J. Bush*, V. Chirayos*, R. Solanki, J. Jiao, Y. Ono, J.F. Conley, Jr.,  and B.D. Ulrich, "Dielectrophoretically Controlled Fabrication of  Single-Crystal Nickel Silicide Nanowire Interconnects," Nano Letters 5(10), 2112-2115 (2005).L.  Dong*, V. Chirayos*, J. Bush*, J. Jiao, V.M. Dubin*, R.V. Chebian*, Y. Ono,  J.F. Conley, Jr., and B.D. Ulrich, "Floating-Potential  Dielectrophoresis-Controlled Fabrication of Single Carbon Nanotube Transistors  and Their Electrical Properties," J. Phys. Chem. B 109, 13148-13153 (2005).J.T. Ryan*, P.M. Lenahan, A.Y. Kang*, J.F.  Conley, Jr., G. Bersuker, P. Lysaght, "Identification of the atomic scale  defects involved in radiation damage in HfO2 based MOS  devices," IEEE Trans. Nucl. Sci. 52(6), 2272-2275 (2005). J.F.  Conley, Jr., L. Stecker, and Y. Ono, "Directed assembly of ZnO nanowires  on a Si substrate without a metal catalyst using a patterned ZnO seed  layer," Nanotechnology 16,  292-296 (2005).M.  Dautrich*, P.M. Lenahan, A.Y. Kang*, and J.F. Conley, Jr., "Non-invasive  nature of corona charging on thermal Si/SiO2 structures," Appl.  Phys. Lett. 85(10), 1844-1845  (2004).W.  Gao, J.F. Conley, Jr., and Y. Ono, "NbO as Gate Electrode for n-channel  metal-oxide-semiconductor field-effect-transistors," Appl. Phys. Lett. 84(23), 4666-4668 (2004).J.F.  Conley, Jr., Y. Ono, and D.J. Tweet, "Densification and Improved  Electrical Properties of Pulse Deposited films via in-situ Modulated  Temperature Annealing," Appl. Phys. Lett. 84(11), 1913-1915 (2004).J.F.  Conley, Jr., Y. Ono, D.J. Tweet, and R. Solanki, "Pulsed Deposition of  Metal-Oxide Thin Films using Dual Precursors," Appl. Phys. Lett. 84(3), 398-400 (2004).A.Y.  Kang*, P.M. Lenahan, and J.F. Conley, Jr., "Electron Spin Resonance  Observation of Trapped Electron Centers in Atomic Layer Deposited HfO2  on Si," Appl. Phys. Lett. 83(16),  3407-3409 (2003).W.  He*, R. Solanki, J.F. Conley, Jr., and Y. Ono, "Pulsed Deposition of  Silicate Films," J. Appl. Phys. 94(5),  3657-3659 (2003). J.F.  Conley, Jr., Y. Ono, R. Solanki, G. Stecker, and W.  Zhuang, "Electrical Properties of HfO2 Deposited via Atomic Layer Deposition using Hf(NO3)4  and H2O," Appl. Phys. Lett. 82(20), 3508-3510 (2003).A. VanDooren, S. Cristoloveanu, J.F. Conley, Jr., M.  Mojarradi, and E. Kolawa, "A Systematic Investigation of the Degradation  Mechanisms in SOI N-Channel LD-MOSFETs," Sol. Sta. Elec. 47, 1419-1427 (2003).J.F. Conley, Jr., Y. Ono, D.J. Tweet, W. Zhuang, and R.  Solanki, "Atomic Layer Deposition of Thin Hafnium Oxide  Films Using a Carbon Free Precursor," J. Appl.  Phys. 93(1), 712-718 (2003).W.  Zhuang, J.F. Conley, Jr., Y. Ono, D.R. Evans, and R. Solanki, "Hafnium  Nitrate Precursor Synthesis and Hafnium Oxide Thin Film Properties,"  Integrated Ferroelectrics 48, 3-12  (2002).A.  Y. Kang*, P. M. Lenahan, and J. F. Conley, Jr., "The Radiation Response of  the High Dielectric-Constant Hafnium Oxide/Silicon System," IEEE Trans.  Nucl. Sci. 49, 2636-2642 (2002).A.  Y. Kang*, P. M. Lenahan, J. F. Conley, Jr., and R. Solanki, "Electron Spin  Resonance Study of Interface Defects in Atomic Layer Deposited Hafnium Oxide on  Si," Appl. Phys. Lett. 81,  1128-1130 (2002).J.F.  Conley, Jr., Y. Ono, W. Zhuang, D.J. Tweet, W. Gao, S. K. Mohammed, and R.  Solanki, "Atomic Layer Deposition of Hafnium Oxide using Anhydrous Hafnium  Nitrate," Electrochem. and Sol.  State Lett. 5(5), C57-C59 (2002).J.S.  Suehle, E. M. Vogel, P. Roitman, J.F. Conley, Jr., A. H. Johnston, B. Wang,  J.B. Bernstein, and C.E. Weintraub, "Observation of Latent Reliability  Degradation in Ultrathin Oxides After Heavy-Ion Irradiation," Appl. Phys.  Lett. 80(7), 1282-1284 (2002).J.F.  Conley, Jr., J.S. Suehle, A.H. Johnston, B. Wang, T. Miyahara, and E.M. Vogel,  "Heavy-Ion Induced Soft Breakdown of Thin Gate Oxides," IEEE Trans. Nucl. Sci. 48,  1913-1916 (2001).A.  Vandooren, J.F. Conley, Jr., S. Cristoloveanu, M. Mojarradi, E. Kolowa,  "Degradation Mechanisms in SOI n-channel LDMOSFETs," Microelectronic  Engineering 59(1-4), 489-495 (2001).C.J.  Nicklaw*, M.P. Pagey, S.T. Pantelides, D.M. Fleetwood, R.D. Schrimpf, K.F.  Galloway, J.E. Wittig, B.M. Howard, E. Taw*, W. H. McNeil*, and J.F. Conley,  Jr., "Defects and Nanocrystals Generated by Si Implantation into a-SiO2,"  IEEE Trans. Nucl. Sci. 47, 2269-2275  (2000).R.J.  Milanowski, M.P. Pagey, L.W. Massengill, J.F. Conley, R.D. Schrimpf, and K.F.  Galloway, "Transient Simulation of Radiation-Induced Charge Trapping and  Interface Trap Formation Using a Three-Carrier Transport Model for Silicon  Dioxide," Journal of Radiation Effects, Research, and Engineering,  18,  115 (2000).  (ITAR) J.F.  Conley, Jr., P.M. Lenahan, and W.F. McArthur, "First-Order Defect  Precursor Formation Kinetics for a Predictive Model of Oxide Charging,"  Journal of Radiation Effects, Research, and Engineering 18,  (2000).  (ITAR) P.M.  Lenahan, J.J. Mele*, J.F. Conley, Jr., R.K. Lowry, and D. Woodbury,  "Predicting Radiation Response from Process Parameters:  Verification of a Physically Based Predictive  Model," IEEE Trans. Nucl. Sci. 46,  1534-1543 (1999).[INVITED] P.M.  Lenahan and J.F. Conley, Jr., "What Can Electron Paramagnetic Resonance  Tell Us About the Si/SiO2 System?," J. Vac. Sci. and Tech. B 16, 2134-2153 (1998).J.F.  Conley, Jr. and P.M. Lenahan, "Predicting Radiation Hardness from Process  Parameters:  A 'First-Principles' Model  of Oxide Charging," Journal of Radiation Effects, Research, and  Engineering  17, (1999).  (ITAR) P.M.  Lenahan and J.F. Conley, Jr., "A Comprehensive Physically Based Predictive  Model for Radiation Damage in MOS Systems," IEEE Trans. Nucl. Sci. 45, 2413-2423 (1998).P.M.  Lenahan and J.F. Conley, Jr., “Response to ‘Comment on “A Model of Hole  Trapping in SiO2 Films on Si”’," J. Appl. Phys. 83, 5591-5594 (1998).J.F.  Conley, Jr., P.M. Lenahan, and W.F. McArthur, "Preliminary Investigation  of the Kinetics of Post-Oxidation Rapid Thermal Anneal Induced  Hole-Trap-Precursor Formation in Microelectronic SiO2 Films,"  Appl. Phys. Lett. 73, 2188-2190  (1998).P.M.  Lenahan and J.F. Conley, Jr., "A Physically Based Predictive Model of  Si/SiO2 Interface Trap Generation Resulting from the Presence of  Holes in the SiO2," Appl. Phys. Lett. 71, 3126-3128 (1997).P.M.  Lenahan and J.F. Conley, Jr., "A Model of Hole Trapping in SiO2  Films on Silicon," J. Appl. Phys. 81,  6822-6824 (1997).J.F.  Conley, Jr., P.M. Lenahan, B.D. Wallace, and P. Cole, "Quantitative Model  of Radiation Induced Charge Trapping in SiO2," IEEE Trans.  Nucl. Sci. 44, 1804-1809 (1997).J.F.  Conley, Jr., P.M. Lenahan, and B.D. Wallace, "Electron Spin Resonance  Characterization of Trapping Centers in Unibond Buried Oxides," IEEE  Trans. Nucl. Sci. 43, 2635-2638  (1996).J.F.  Conley, Jr., P.M. Lenahan, A.J. Lelis, and T.R. Oldham, “Electron Spin  Resonance Evidence that E'γ  Centers Can Behave as Switching Oxide Traps,” IEEE Trans. Nucl. Sci. 42, 1744-1749 (1995).J.F.  Conley, Jr. and P.M. Lenahan, “Electron Spin Resonance Analysis of EP Center  Interactions with H2: Evidence for a Localized EP Center Structure,”  IEEE Trans. Nucl. Sci. 42, 1740-1743  (1995).J.F.  Conley, Jr., P.M. Lenahan, A.J. Lelis, and T.R. Oldham, “Electron Spin  Resonance Evidence for the Structure of a Switching Oxide Trap:  Long Term Structural Change at Silicon  Dangling Bond Sites in SiO2,” Appl. Phys. Lett. 67, 2179-2181 (1995).J.F.  Conley, Jr. and P.M. Lenahan, “Hydrogen Complexed EP (E') Centers and EP/H2  Interactions:  Implications for EP  Structure,” Microelectronic Engineering 28,  35-38 (1995). J.F.  Conley, Jr., P.M. Lenahan, R.K. Lowry, H.L. Evans, and T.J. Morthorst,  "Electron Spin Resonance Evidence for an Impurity Related E'-Like Hole  Trapping Defect in Thermally Grown SiO2 on Si," J. Appl. Phys. 76, 8186-8188 (1994).J.F.  Conley, Jr., P.M. Lenahan, R.K. Lowry, H.L. Evans, and T.J. Morthorst,  "Observation and Electronic Characterization of Two E' Center Charge Traps  in Conventionally Grown Thermal SiO2 on Si," Appl. Phys. Lett. 65, 2281-2283 (1994).J.F.  Conley, Jr., P.M. Lenahan, R.K. Lowry, H.L. Evans, and T.J. Morthorst,  "Observation and Electronic Characterization of "New" E' Center  Defects in Technologically Relevant Thermal SiO2 on Si:  An Additional Complexity in Oxide Charge  Trapping," J. Appl. Phys. 76,  2872-2880 (1994).J.F.  Conley, Jr. and P.M. Lenahan, "Molecular Hydrogen, E' Center Hole Traps,  and Radiation Induced Interface Traps in MOS Devices," IEEE Trans. Nuc.  Sci. 40, 1335-1340 (1993).J.F.  Conley and P.M. Lenahan, "Radiation Induced Interface States and ESR  Evidence for Room Temperature Interactions Between Molecular Hydrogen and  Silicon Dangling Bonds in Amorphous SiO2 Films on Si,"  Microelectronic Engineering 22,  215-218 (1993). J.F.  Conley and P.M. Lenahan, "Room Temperature Reactions Involving Silicon  Dangling Bond Centers and Molecular Hydrogen in Amorphous SiO2 Thin  Films on Silicon," Appl. Phys. Lett. 62,  40-42 (1993).J.F.  Conley, P.M. Lenahan, and P. Roitman, "Evidence for a Deep Electron Trap  and Charge Compensation in Separation by Implanted Oxygen Oxides," IEEE  Trans. Nuc. Sci. 39, 2114-2120  (1992).J.F.  Conley and P.M. Lenahan, "Room Temperature Reactions Involving Silicon  Dangling Bond Centers and Molecular Hydrogen in Amorphous SiO2 Thin  Films on Silicon," IEEE Trans. Nuc. Sci. 39, 2186-2191 (1992).J.F.  Conley, Jr. P.M. Lenahan, and P. Roitman, "Electron Spin Resonance of  Separation by Implanted Oxygen Oxides:   Evidence for Structural Change and a Deep Electron Trap," Appl.  Phys. Lett. 60, 2889-2891 (1992).J.F.  Conley, P.M. Lenahan, and P. Roitman, "Electron Spin Resonance Study of E'  Trapping Centers in SIMOX Buried Oxides," IEEE Trans. Nuc. Sci. 38, 1247-1252 (1991).  C1.3.  Peer-Reviewed Archival Conference Publications  (including 6 invited)The following papers appeared in  archival proceedings that were distributed to libraries (the next section  covers other types of proceedings).  The  acceptance rate is indicated as part of the entry whenever the selection  process was rigorous.    * = Student or post-doctoral  authors
 
        T. Klarr, D. Austin, N.  Alimardani, and J.F. Conley, Jr., "Electrical Stressing of HfO2/Al2O3  Bilayer Metal-Insulator-Insulator-Metal Diodes," IEEE International  Integrated Reliability Workshop (IRW) Final Report, pg. 15-18, (2013). CFP13IRW-PRT /  978-1-4799-0950-4 / 1930-8841.N. Alimardani and J.F. Conley, Jr., "Step  tunneling enhanced asymmetry in metal-insulator-insulator-metal (MIIM) diodes  for rectenna applications," Proceedings of the SPIE, Next Generation  (Nano) Photonic and Cell Technologies for Solar Energy Conversion IV, O.V.  Sulima and G. Conibeer, eds., Vol. 8824, OS1-10, 10 pgs., San Diego, CA, August  25-27, 2013. " Step tunneling enhanced asymmetry in  metal-insulator-insulator-metal (MIIM) diodes for rectenna applications ", Proc. SPIE 8824, Next Generation (Nano) Photonic and Cell Technologies  for Solar Energy Conversion IV, 88240S (September 25, 2013); doi:10.1117/12.2024750; http://dx.doi.org/10.1117/12.2024750 S.W. Smith*, H. Chan*, C. Buesch*, J. Simonsen,  and J.F. Conley Jr., "Improved Temperature Stability of Atomic Layer  Deposition Coated Cellulose Nanocrystal Aerogels," Mater. Res. Soc. Proc. 1465 (2012). 6 pgs.  mrss12-1465-ss05-07 doi:10.1557/opl.2012.1073.[INVITED]  G.S. Herman, J.S. Rajachidambaram, M.S. Rajachidambaram, S.-Y. Han, C.-H.  Chang, S. Murali, J.F. Conley, Jr., "Transparent Oxide Semiconductors:  Recent Material Developments and New Applications," Proc. of the 2011 IEEE  Photonics Conference (DOI 10.1109/PHO.2011.6110668 978-1-4244-8939-8/11/), p.  555-556.A.D. Mason*, C.-C. Huang*, M.T. Koesdjojo*, N.  Stephon*, V.T. Remcho and J. F. Conley, Jr., "Functionalization and  Environmental Stabilization of ZnO Nanobridge Sensors Fabricated using  Carbonized Photoresist," Mater. Res. Soc. Proc. 1350, mrss11-1350-ee11-06 DOI: 10.1557/opl.2011.1243, 6 pgs.S. Murali*, J.S. Rajachidambaram*, S.Y. Han, C.-H. Chang, G. Herman, and J.F. Conley, Jr., "Bipolar  Resistive Switching of Zinc-Tin-Oxide Resistive Random Access Memory,"  Proc. of the IEEE International NANO 2011 Conference, Portland, OR, August  2011, pgs. 740-743.N.  Alimardani*, J.F. Conley, Jr., E. W. Cowell III*, J.F. Wager, M. Chin, S.  Kilpatrick, and M. Dubey "Stability and Bias Stressing of  Metal/Insulator/Metal Diodes," IEEE International Integrated Reliability  Workshop (IRW) Final Report, ISBN 978-1-4244-8522-2, pgs. 80-84 (2010).G.L.  Smith, R.G. Polcawich, J.S. Pulskamp, T. Waggoner*, and J.F. Conley, Jr.,  "Atomic Layer Deposited Alumina for use as an Etch Barrier Against Xenon  Difluoride Etching," Solid State Sensor, Actuator and Microsystems  Workshop Proceedings, Hilton Head Island, SC, pgs. 194-197 (2010).S.  Smith*, K. McAuliffe*, and J.F. Conley, Jr., "Atomic Layer Deposited Al2O3/Ta2O5  Nanolaminate Capacitors," 2009 IEEE International Semiconductor Device  Research Symposium (ISDRS) Proceedings, ISBN 978-1-4244-6031-1/09, 2 pgs  (2009).A.  Mason*, T.F. Roberts*, J.F. Conley, Jr., D.T. Price, D.D.J. Allman, and M.S.  McGuire, "Investigation of Growth Parameter Influence on Hydrothermally  Grown ZnO Nanowires Using a Research Grade Microwave," 2009 IEEE  International Semiconductor Device Research Symposium (ISDRS) Proceedings, ISBN  978-1-4244-6031-1/09, 2 pgs (2009).B.  Pelatt*, C.C. Huang*, and J.F. Conley, Jr., "ZnO Nanobridge Devices  Fabricated on Carbonized Photoresist," 2009 IEEE International  Semiconductor Device Research Symposium (ISDRS) Proceedings, ISBN 978-1-4244-6031-1/09,  2pgs (2009).[INVITED] J.F. Conley, Jr., "Instabilities in Oxide Semiconductor Transparent  Thin Film Transistors," 2009 IEEE International Integrated Reliability  Workshop (IRW) Final Report, ISBN 978-1-4244-3921-8, pgs. 50-55, (2009).J.  Triska*, J.F. Conley, Jr., R. Presley*, and J.F. Wager, "Bias Stability of  Zinc-Tin-Oxide Thin Film Transistors with Al2O3 Gate  Dielectrics," IEEE International Integrated Reliability Workshop (IRW)  Final Report, ISBN 978-1-4244-3921-8, pgs. 86-89 (2009).A.D.  Mason*, T.J. Waggoner*, S.W. Smith*, J.F. Conley, Jr., B.J. Gibbons, D. Price,  and D. Allman, "Hydrothermal Synthesis of Zinc Oxide Nanowires on Kevlar  using ALD and Sputtered ZnO Seed Layers," in Semiconductor  Nanowires — Growth, Size-Dependent Properties, and Applications,  edited by Ali Javey (Mater. Res. Soc. Symp. Proc. Volume 1178E, Warrendale, PA, 2009), 1178-AA06-38, pgs. 1-6. [INVITED] P.M. Lenahan, J.T. Ryan*, C.J.  Cochrane*, and J.F. Conley, Jr., "Defects in HfO2 Based  Dielectric Gate Stacks," in CMOS Gate-Stack  Scaling — Materials, Interfaces and Reliability Implications,  edited by J. Butterbaugh, A. Demkov, R. Harris, W. Rachmady, B. Taylor (Mater.  Res. Soc. Symp. Proc. Volume 1155,  Warrendale, PA, 2009), pgs. 1-6.J.M.  Green*, T. Gutu*, L.F. Dong*, J. Jiao, J.F. Conley, Jr., and Y. Ono. "Electron Microscopy  Characterization of Al2O3 and ZnO Coated Carbon  Nanotubes." Proceedings of Microscopy and Microanalysis 2006, Vol. 12, Supplement 2, 676-677 (2006).J.F.  Conley, Jr., D. McClain* J. Jiao, W. Gao, D. Evans, and Y. Ono,  "Characterization of Nanocones Grown During DC Magnetron Sputtering of an  ITO Target," in Chemistry of Nanomaterial Synthesis and Processing, edited  by X. Peng, X. Feng, J. Liu, Z. Ren, and J.A. Voigt (Mater. Res. Soc. Symp.  Proc. 879E, Warrendale, PA, 2005),  Z3.37, pgs. 1-6.    J.F.  Conley, Jr., D.J. Tweet, Y. Ono, and G. Stecker, "Interval Annealing  During Alternating Pulse Deposition," in High-k Insulators and Ferroelectrics for Advanced Microelectronic  Devices, R.M. Wallace, D. Landheer, M. Houssa, and J. Morais, eds., Mat.  Res. Soc. Proc. Vol. 811, pp. 5-10,  (Materials Research Society, Pittsburgh, PA, 2004).Y.  Senzaki, S. Park, D. Tweet, J.F. Conley, Jr., and Y. Ono, "Ozone-Based  Atomic Layer Deposition of HfO2 and HfxSi1-xO2  and Film Characterization," in High-k  Insulators and Ferroelectrics for Advanced Microelectronic Devices, R.M.  Wallace, D. Landheer, M. Houssa, and J. Morais, eds., Mat. Res. Soc. Proc. Vol. 811, pp. 217-222, (Materials  Research Society, Pittsburgh, PA, 2004).J.F.  Conley, Jr., Y. Ono, D. Tweet, G. Stecker, R. Solanki, and W.W. Zhuang,  "Alternating Pulse Deposition of High-k Metal Oxide Thin Films using Hf(NO3)4  as a Metal and an Oxygen Source with Multiple in-situ Annealing," in Physics and Technology of High-k Gate  Diectrics II, S. Kar, R. Singh, D. Misra, H. Iwai, M. Houssa, J. Morais,  and D. Landheer, eds., Electrochem. Soc. Proc. Vol. 2003-22, (The  Electrochemical Society, Pennington, NJ, 2003), 11 pgs.W.  Gao, J.F. Conley, Jr., and Y. Ono, "NbO Gate Electrode," in Physics and Technology of High-k Gate  Diectrics II, S. Kar, R. Singh, D. Misra, H. Iwai, M. Houssa, J. Morais,  and D. Landheer, eds., Electrochem. Soc. Proc. Vol. 2003-22, (The  Electrochemical Society, Pennington, NJ, 2003), 9 pgs.A.Y.  Kang*, P.M. Lenahan, J.F. Conley, Jr., and Y. Ono, "Reliability Concerns  for HfO2/Si (and ZrO2/Si) Systems: Interface and  Dielectric Traps," IEEE 2003 International Integrated Reliability Workshop  (IRW) Final Report, IEEE #03TH8715, p. 24-27 (2003).M.  Dautrich*, P.M. Lenahan, A.Y. Kang*, and J.F. Conley, Jr., "Non-Invasive  Nature of Corona Charging on Thermal Si/SiO2 Structures," IEEE  2003 International Integrated Reliability Workshop (IRW) Final Report, IEEE  #03TH8715, p. 7-9 (2003).J.F.  Conley, Jr., Y. Ono, and R. Solanki, "Pulsed Deposition of HfO2  using Hf(NO3)4 as an Oxidizing Agent for HfCl4,"  in CMOS Front-End Materials and Process  Technology, T.J. King, R.J.P. Lander, S. Saito, and B. Yu, eds., Mat. Res.  Soc. Proc. Vol. 765, pp. 91-96,  (Materials Research Society, Pittsburgh, PA, 2003).W.  Gao, J. F. Conley, and Y. Ono, "Stacked Metal Layers as Gates for MOSFET  Threshold Voltage Control," in CMOS  Front-End Materials and Process Technology, T.J. King, R.J.P. Lander, S.  Saito, and B. Yu, eds., Mat. Res. Soc. Proc. Vol. 765, pp. 3-8, (Materials Research Society, Pittsburgh, PA, 2003).J.F.  Conley, Jr., Y. Ono, W. Zhuang, L. Stecker, and G. Stecker, "Electrical  Properties and Reliability of HfO2 Deposited via ALD using Hf(NO3)4  Precursor," IEEE 2002 Integrated Reliability Workshop (IRW) Final Report,  IEEE #02TH8634, p. 108-112 (2002).A.Y.  Kang*, P.M. Lenahan, and J.F. Conley, Jr., "Reliability Concerns for HfO2/Si  Devices: Interface and Dielectric Traps," IEEE International Integrated  Reliability Workshop (IRW) Final Report, IEEE #02TH8634, p. 102-107 (2002).J.F.  Conley, Jr., Y. Ono, D.J. Tweet, W. Zhuang, R. Solanki, "Atomic Layer  Chemical Vapor Deposition of Hafnium Oxide Using Anhydrous Hafnium Nitrate  Precursor," in Silicon Materials –  Processing, Characterization, and Reliability, J. Veteran, D.L. O'Meara, V.  Misra, P. Ho, eds., Mat. Res. Soc. Proc. Vol. 716, pp. 73-78, (Materials Research Society, Pittsburgh, PA, 2002).J.S.  Suehle, B. Wang*, E. M. Vogel, J.F. Conley, Jr., A. H. Johnston, and J.B.  Bernstein, "Latent Reliability Degradation of Ultra-Thin Oxides After  Heavy-Ion Irradiation and Gamma-Ray Irradiation," IEEE 2001 International Integrated Reliability Workshop  (IRW) Final Report, IEEE #01TH8580, p. 16-19, (2001).J.F.  Conley, Jr., A. Vandooren, L. Reiner*, S. Cristoloveanu, M. Mojarradi, and E.  Kolowa, "Radiation Induced Degradation of SOI n-channel LDMOSFETs,"  in proceedings of the 2001 IEEE International SOI Conference, p. 125-6 (2001).  (Extended abstract.)J.F.  Conley, Jr., Y. Ono, D.J. Tweet, W. Zhuang, M. Khaiser, R. Solanki,  "Investigation of Hafnium Oxide Deposited via Atomic Layer Chemical Vapor  Deposition (ALCVD)," IEEE 2001 International  Integrated Reliability Workshop (IRW) Final Report, IEEE #01TH8580, p. 11-15  (2001).J.S.  Suehle, T. Meyers, and J.F. Conley, Jr., “The Effects of Ionizing Radiation on  Wear-Out and Reliability of Thin Gate Oxides,” 2000 IEEE Microelectronics and  Reliability and Qualification Workshop, p. IV.2, 4 pgs (2000). (Extended  Abstract)W.M.  McNeil*, J.F. Conley, Jr., and H. Walker, "2-D Imaging of Trapped Charge  in SiO2 Using Kelvin Probe Force Microscopy," in proceedings of  the 2000 IEEE International SOI Conference, p. 38-9 (2000).  (Extended abstract)J.F.  Conley, Jr., P.M. Lenahan, and W.F. McArthur, "Addition of Kinetics to a  Predictive Thermodynamics Model of Radiation Hardening," in Government  Microcircuit Applications Conference (GOMAC) Digest of Papers, Vol. XXIV, p.  754-757 (1999).  (ITAR)R.  Milanowski, M. Pagey, J. Conley, L. Massengill, R. Schrimpf, and K. Galloway,  "Total Dose Radiation-Effects Simulation Using Three-Carrier Transport in  SiO2," in Government Microcircuit Applications Conference  (GOMAC) Digest of Papers, Vol. XXIV, p. 758-761 (1999).  (ITAR)J.F.  Conley, Jr. and P.M. Lenahan, "Predicting Radiation Hardness from Process  Parameters:  A 'First-Principles' Model  of Oxide Charging," in Government Microcircuit Applications Conference  (GOMAC) Digest of Papers, Vol. XXIII, p. 578-581 (1998).  (ITAR)J.F.  Conley, Jr., W.F. McArthur, and P.M. Lenahan, "A Preliminary Investigation  of the Kinetics of Post-Oxidation Anneal Induced E' Precursor Formation,"  in the IEEE International Integrated Reliability Workshop (IRW) Final Report,  IEEE #98TH8363, p. 62-67 (1998).J.F.  Conley, Jr., "Confirmation of a Predictive Process Dependent Model of  Oxide Charging," in the IEEE 1997 International Integrated Reliability  Workshop (IRW) Final Report, IEEE #97TH8319, p. 138-139 (1997).[INVITED] P.M. Lenahan and J.F. Conley,  Jr., "A Physically Based Model of Charge Trapping in Gate Oxides," in Silicon Nitride and Silicon Dioxide Thin  Insulating Films, M.J. Deen, W.D. Brown, K.B. Sundaram, and S.I Raider,  eds., Electrochem. Soc. Proc. Vol. 97-10, p. 275-284 (The Electrochemical  Society, Pennington, NJ, 1997). J.F.  Conley, Jr., P.M. Lenahan, and P. Cole, "Predictive Model of SOI Buried  Oxide Charging Based on Statistical Mechanics and Spin Resonance Data,"  proceedings of the 1997 IEEE International SOI Conference, p. 176-7 (1997).[INVITED] J.F. Conley, Jr. and P.M.  Lenahan, "A Review of Electron Spin Resonance Spectroscopy of Defects in  Thin Film SiO2 on Si," in The  Physics and Chemistry of SiO2 and the Si/SiO2 Interface 3,  H.Z. Massoud, E.H. Poindexter, and C.R. Helms, eds., Electrochem. Soc. Proc.  Vol. 96-1, p. 214-249 (The Electrochemical Society, Pennington, NJ, 1996).[INVITED] P.M. Lenahan and J.F. Conley,  Jr., "Radiation Damage in Metal Oxide Silicon Devices:  Fundamental Understanding Developed Through  Magnetic Resonance," in Proceedings of the IEEE Radiation Studies  Conference (RADSCON 96), p. 89-107 (1996).J.F.  Conley, Jr., P.M. Lenahan, and B.D. Wallace*, "Physically Based Predictive  Model of Oxide Charging," in the IEEE 1996 International Integrated  Reliability Workshop (IRW) Final Report, IEEE #96TH8215, p. 134-141 (1996).[INVITED] J.F. Conley, Jr.,  "Application of Electron Spin Resonance as a Tool for Building in  Reliability," in Materials  Reliability in Microelectronics VI, W.F. Filter, J.J. Clement, A.S. Oates,  R. Rosenberg, and P.M. Lenahan, eds., Mat. Res. Soc. Proc. Vol. 428, p. 293-315 (The Materials Research  Society, Pittsburgh, PA, 1996).J.F.  Conley, Jr., P.M. Lenahan, and B.D. Wallace*, "Electron Spin Resonance  Characterization of Unibond Material," proceedings of the 1996 IEEE  International SOI Conference, p. 164-5 (1996).   (Extended abstract)J.F.  Conley, Jr. and P.M. Lenahan, “Electron Spin Resonance Evidence for a Localized  EP Defect Structure,” in Defect and  Impurity Engineered Semiconductors and Devices, S. Ashok, J. Chevallier, I.  Akasaki, N. M. Johnson, and B. L. Sopori, eds. Mat. Res. Soc. Proc. Vol. 378, p. 377-382 (The Materials Research  Society, Pittsburgh, PA, 1995).R.K.  Lowry, H.L. Evans, W.L. Schultz, T.J. Morthorst, P.M. Lenahan, and J.F. Conley,  Jr., "Electron Spin Resonance Characterization of Electrically Active  Oxide Defects," in Proceedings of  the 20th International Symposium for Testing and Failure Analysis (ISTFA),  Los Angeles, CA, p. 33-40 (1994).J.F.  Conley, Jr., P.M. Lenahan, R.K. Lowry, H.L. Evans, and T.J. Morthorst,  "The Roles of Several E' Variants in Thermal Gate Oxide Reliability,"  in Materials Reliability in  Microelectronics IV, Mat. Res. Soc. Proc. Vol. 138, pp. 37-42 (Materials Research Society, Pittsburgh, PA, 1994).J.F.  Conley, Jr., P.M. Lenahan, R.K. Lowry, H.L. Evans, and T.J. Morthorst,  "Characterization of Two E' Center Charge Traps in Conventionally  Processed Thermal SiO2 on Si," in ESSDERC 94:  Proceedings of the  24th European Solid State Device Research Conference, edited by C. Hill and  P. Ashburn (Editions Frontieres, London, 1994) pp. 309-312.H.L.  Evans, R.K. Lowry, W.L. Schultz, T.J. Morthorst, P.M. Lenahan, J.F. Conley,  Jr., "Enhancing Reliability of CMOS Devices Using Electrical Techniques  and Electron Spin Resonance," in Proceedings  of the 32nd Annual IEEE International Reliability Physics Symposium, San  Jose, CA, p. 410-419 (1994).P.  Roitman, S. Mayo, D. Simons, S.J. Krause, J.C. Park, J.D. Lee, D. Venables,  P.M. Lenahan, and J.F. Conley, "Effect of Nitrogen Ambients During High  Temperature SIMOX Annealing," in SOI  Technology and Devices (6th International Symposium), S. Cristoloveanu,  ed., Electrochem. Soc. Proc. Vol. 94-11, pp. 92-97 (The Electrochemical  Society, Pennington, NJ, 1994).J.F.  Conley, Jr., P.M. Lenahan, and P. Roitman, "Electron Traps, Structural  Change, and Hydrogen Related SIMOX Defects," proceedings of the 1992 IEEE  International SOI Conference, p. 26-27 (1992).   (Extended abstract)J.F.  Conley, Jr., P.M. Lenahan, and P. Roitman, "ESR Study of E' Trapping  Centers in SIMOX Oxides," proceedings of the 1991 IEEE International SOI  Conference (October, 1991), p. 12-13.   (Extended abstract)J.F.  Conley, P.M. Lenahan, and P. Roitman, "Electron Spin Resonance Study of  Trapping Centers in SIMOX Buried Oxides," in Insulating Films on Semiconductors 1991, edited by W. Eccleston and  M. Uren (Adam Higler, Bristol, 1991), p. 259-262.J.F.  Conley, Jr. and P.M. Lenahan, "Direct Experimental Evidence for a Dominant  Hole Trapping Center in SIMOX Oxides," proceedings of the 1990 IEEE  International SOI Conference (October, 1990), p. 164-5.  (Extended abstract) C1.4.  Other Peer-Reviewed PublicationsThe following papers appeared in  proceedings that were distributed primarily to attendees (as CDs, printed  volumes, availability through a public website, etc.).     
        N. Murari, R.H. Mansergh, Y. Huang, G.  Westerfield, D. Keszler, J.F. Conley, Jr. "Comparison of Solution Based  Aluminum Oxide Phosphate Thin Films Deposited via Spin Coating vs. a Novel Mist  Deposition System," presented at the 62nd Meeting of the  American Vacuum Society, San Jose, CA, Nov. 2015.S. Lin, N. Murari, and J.F. Conley, Jr., "Metal-Insulator-Insulator-Metal  Diodes for Rectenna Applications," presented at the 62nd Meeting  of the American Vacuum Society, San Jose, CA, Nov. 2015.A.  Valdivia and J.F. Conley, Jr., "Atomic Layer Deposition of 2D MoS2  on 150mm Si/SiO2 Substrates," presented at the 15th  International Conference on Atomic Layer Deposition Conference (ALD 2015),  Portland, OR, June 2015.D.Z.  Austin, D.  Allman, D. Price, S. Hose, and J.F. Conley, Jr., "Low Voltage Nonlinearity  Metal-Insulator-Insulator-Metal (MIIM) Capacitors via Plasma Enhanced Atomic  Layer Deposition,"presented at the  15th International Conference on Atomic Layer Deposition Conference (ALD 2015),  Portland, OR, June 2015.J.F.  Conley Jr., "Atomic Layer Deposition of Dielectric Stacks for Metal/Insulator/Insulator/Metal  Diodes," presented at the 15th International Conference on Atomic Layer  Deposition Conference (ALD 2015), Portland, OR, June 2015.S.  Lin, N. Murari, W.F. Stickle, and J.F. Conley, Jr., "ALD of Nb-doped TiO2  as a Transparent Conductive Oxide,"presented  at  the 15th International Conference on  Atomic Layer Deposition Conference (ALD 2015), Portland, OR, Jun, 2015.W.  Kenneth Ward, Sheila Benware, Matthew Breen, Tyler Milhem, Kristin Morris, Chad  Knutsen, Kamesh Mullapudi, John Conley, and Robert S. Cargill, "Continuous  Glucose Monitoring at the Site of Subcutaneous (SC) Insulin Delivery: Building  a Durable Sensing Catheter, presented  at the American Diabetes Association 74th Scientific Sessions,  Boston, MA,  June 2015. J.F.  Conley, Jr. and N. Alimardani, "Increasing the Asymmetry of Metal-Insulator-Insulator-Metal (MIIM)  Tunnel Diodes through Defect Enhanced Direct Tunneling (DEDT), presented at the  2014 Workshop for Innovative Nanoscale Devices and Systems (WINDS), Kohala  Coast, HI, Dec. 2014.N.  Alimardani, and J.F. Conley, Jr., " Enhancing  the Performance of Metal/Insulator/Insulator/Metal (MIIM) Tunnel Diodes via Defect  Enhanced Direct Tunneling (DEDT)," presented at the IEEE  Semiconductor Interface Specialists Conference (SISC), San Diego, Dec. 2014.D.Z.  Austin, D. Allman, D. Price, S. Hose, and J.F. Conley, Jr., "Plasma  Enhanced Atomic Layer Deposition of Low Voltage Nonlinearity Al2O3/SiO2  Metal-Insulator-Insulator-Metal (MIIM) Capacitors ," presented at  the IEEE Semiconductor Interface Specialists Conference (SISC), San Diego,  Dec. 2014.S.W.  Smith, D.A. Keszler, and J.F. Conley, Jr., "Interfacial oxide formation in  aqueous Al2O3 thin film deposition on silicon via prompt  inorganic condensation," presented at the IEEE Semiconductor  Interface Specialists Conference (SISC), San Diego, Dec. 2014.      D.Z. Austin, D. Allman, D. Price, S. Hose, and J.F. Conley,  Jr., "Low  Voltage Nonlinearity Metal-Insulator-Insulator-Metal (MIIM) Capacitors using  Plasma Enhanced Atomic Layer Deposition of SiO2 and Al2O3", presented at the 61st Meeting of the  American Vacuum Society, Baltimore, MD, Nov. 2014.N. Alimardani, and J.F. Conley, Jr., "Enhanced  Performance Metal/Insulator/Insulator/Metal (MIIM) Tunnel Diodes", presented  at the 61st Meeting of the American Vacuum Society, Baltimore, MD,  Nov. 2014.X. Du, J. Motley, A.K. Herman, L. Arnadottir, G.S. Herman,  X.Tan, J.F. Conley, Jr., W. K. Ward, R. S. Cargill, J.R. Castle, P. G. Jacobs, "Characterization  of an amperometric glucose sensor on a flexible polyimide substrate for  continuous glucose monitoring and insulin delivery through single device  ", presented at the 61st Meeting of the American Vacuum  Society, Baltimore, MD, Nov. 2014.Klarr, L. Wei, N. Nguyen, J. McGlone, J. Wager, and J.F.  Conley, Jr., "Assessment of Barrier Heights between ZrCuAlNi Amorphous  Metal and SiO2, Al2O3, and HfO2  using Internal Photoemission Spectroscopy ", presented at the 61st  Meeting of the American Vacuum Society, Baltimore, MD, Nov. 2014.Tsung-Han Chiang, Bao Yeh, Stephen Lowery, Rick Presley,  Dustin Austin, John F. Wager, and John F. Conley, Jr., "Ultrathin indium  gallium zinc oxide thin-film transistors," to be presented at the 5th  Intl. Symp. on Transparent Conductive Materials, Platanias - Chania, Crete,  Greece, October, 2014.S.W. Smith, D.A. Keszler, and J.F. Conley, Jr., "Interfacial  oxide formation in aqueous Al2O3 thin film deposition on  silicon via prompt inorganic condensation," presented at the 25th  Annual Symposium of the PNWAVS Science and Technology Society, Richland, WA,  Sept. 2014.Lester Lampert, Brittany  Timonen, Sean Smith, Brittney Davidge, Haiyan Li, John F. Conley, Jr., Jeffrey  Singer, and Jun Jiao, "Varying Phases of Alumina Nanowires Templated  by Vertically Aligned Carbon Nanotubes Grown via Atomic Layer Deposition,"  accepted for the 2014 Microscopy & Microanalysis meeting in  Hartford, CT, Aug. 2014.W.  Kenneth Ward, Sheila Benware, Matthew Breen, Kristin Morris, Xiaosong Du,  Xuebin Tan, Tyler Milhem, Chris Durgan, David Matthews, John Conley, Gregory  Herman, Robert Cargill, "Continuous  Sensing of Glucose at the Site of Insulin Delivery in Swine," presented at  the American Diabetes Association 74th Scientific Sessions, San  Francisco, CA,  June 2014.M.  Mutch, P. M. Lenahan, C.J. Cochrane, S. W. King, B. C. Bittel, J. F. Conley, N.  Alimardani, "Bias Dependent Electrically Detected Magnetic Resonance at  Multiple Frequencies in Low-k Dielectrics via Spin Dependent Trap Assisted  Tunneling," presented at the Materials Research Society (MRS) Spring  Meeting, San Francisco, CA, Apr. 2014.J.F.  Conley, Jr. N. Alimardani, B.L. French, and S.W. King, "Enhancing the  Performance of Metal/Insulator/Insulator/Metal (MIIM) Diodes," presented  at the Materials Research Society (MRS) Spring Meeting, San Francisco, CA, Apr.  2014.S. Kundu, X. Du, C. Durgan, D. Matthews, M.  Bates, L. Arnadottir, G.S. Herman, J.F. Conley, Jr., W. K. Ward, R. S. Cargill,  J.R. Castle, P. G. Jacobs, "Fabrication  and characterization of an amperometric glucose-sensing catheter on a flexible  polyimide substrate for an artificial pancreas," presented at FlexTech  2014, Phoenix, AZ Feb. 2014.M.  Mutch, P. M. Lenahan, C.J. Cochrane, S. W. King, B. C. Bittel, J. F. Conley, N.  Alimardani, "Spin Dependent Variable Range Hopping in Thin Dielectric  Films in MOS and MIM Systems," presented at the 41st  Conference on the Physics and Chemistry of  Surfaces and Interfaces (PCSI) Santa Fe, NM, Jan. 2014.J.F.  Conley, Jr. and N. Alimardani, "Step  Tunneling Enhanced Metal-Insulator-Insulator-Metal (MIIM) Tunnel Diodes," presented at the International  Symposium on Advanced Nanodevices and Nanotechnology  (ISANN) 2014, Poipu, Kuaii, Dec. 2013.T. Klarr, D. Austin, N. Alimardani, and J.F.  Conley, Jr., "Electrical Stressing of HfO2/Al2O3  Bilayer Metal-Insulator-Insulator-Metal Diodes," presented at the IEEE  International Integrated Reliability Workshop (IIRW), Lake Tahoe, CA, Oct.  2013.[Best Poster Nominee!] Sean W. Smith, Wei Wang,  David Matthews, Douglas A. Keszler, and John F. Conley Jr., "Comparison of  Solution Based Prompt Inorganic Condensation of Al2O3  with Atomic Layer Deposition," presented at the 2013 MRS Fall Meeting,  Boston, MA, Dec. 2013. Sean W. Smith, Wei Wang, David Matthews, Douglas  A. Keszler, and John F. Conley Jr., "Comparison of Al2O3  Deposited via Prompt Inorganic Condensation vs. Atomic Layer Deposition," presented  at the 60th Meeting of the American Vacuum Society, Los Angeles, CA,  Oct. 2013.N. Alimardani and J.F. Conley, Jr.,  "Investigation of the Dominant Conduction Mechanisms in  Metal-Insulator-Metal Tunnel Diodes with Ta2O5 and Nb2O5  Dielectrics Deposited by Atomic Layer Deposition," presented at the 60th  Meeting of the American Vacuum Society, Los Angeles, CA, Oct. 2013.N.  Alimardani and J.F. Conley, Jr., "Investigation of ALD Dielectrics and  Nanolaminates for Rectenna Based Energy Harvesting Applications,"  presented at the American Vacuum Society 13th International  Conference on Atomic Layer Deposition, San Diego, CA, July 2013.D.Z. Austin, S.W. Smith, D. Allman, D. Price, S.  Hose, M. Saly, and J.F. Conley, Jr. "Characterization of Bismuth Oxide Deposited by Atomic Layer Deposition  Using Bi(OCMe2iPr)3 and H2O," presented  at the American Vacuum Society 13th International Conference on  Atomic Layer Deposition, San Diego, CA, July 2013.N.  Alimardani and J.F. Conley, Jr., "Step Tunneling Enhanced Asymmetry in  Metal-Insulator-Insulator-Metal (MIIM) Diodes," oral presentation at the  2013 Materials Research Society Electronic Materials Conference, South Bend,  IN, June 2013. John Simonsen, Sean Smith, Christian Beusch,  John Conley, "Improved temperature stability of atomic layer deposition  coated cellulose nanocrystal aerogels," presented at the 245th  American Chemical Society Meeting, New Orleans, LA, April, 2013.Sean Smith, Christian Buesch, Dave Matthews,  John Simonsen, and John Conley, "Atomic Layer Deposition on Cellulose  Nanocrystal Aerogels, presented at the Tappi International Conference on  Nanotechnology for Renewable Materials, Stockholm, Sweden, June, 2013.N.  Alimardani and J.F. Conley, Jr. "Engineering Asymmetry in  Metal-Insulator-Insulator-Metal (MIIM) Tunnel Diodes, presented at the 43rd  IEEE Semiconductor Interface Specialists Conference (SISC), San Diego, CA, Dec.  2012, 2 pgs. (Extended abstract).[INVITED]  J.F. Conley Jr., "Resistive Switching in Zinc-Tin-Oxide and Atomic Layer  Deposition of Nanolaminates for Amorphous Oxide Semiconductor Thin Film  Transistors," presented at the 222nd Meeting of the  Electrochemical Society (ECS), Honolulu, HI, October 2012, 1 pg. (Abstract).S.W.  Smith, J.F. Conley Jr., H. Chan, and J. Simonsen, "Improved Temperature  Stability of Atomic Layer Deposition Coated Cellulose Nanocrystal  Aerogels," AVS-ALD 2012 / Baltic-ALD 2012 Conference, Dresden, Germany,  June 2012.S.  Murali, J.S. Rajachidambaram, S.Y. Han, C.H. Chang, G.S. Herman, and J.F.  Conley, Jr., "Resistive Switching in Amorphous Zinc-Tin-Oxide,"  Workshop on Dielectrics in Microelectronics (WoDiM), Dresden, Germany, June  2012.N.  Alimardani*, E.W. Cowell III*, J.F. Wager, and J.F. Conley, Jr.,  "Fabrication and Investigation of Metal-Insulator-Insulator-Metal (MIIM)  Tunnel Diodes Using Atomic Layer Deposition," 221st Meeting of  the Electrochemical Society (ECS), Seattle, WA, May 2012, 1 pg. (Abstract).S.W.  Smith, J.F. Conley Jr., H. Chan, and J. Simonsen, "Improved Temperature  Stability of Atomic Layer Deposition Coated Cellulose Nanocrystal  Aerogels," 2012 Spring Meeting of the Materials Research Society, San  Francisco, CA, April 2012, 1 pg. (Abstract)S.  Murali, J.S. Rajachidambaram, S.Y. Han, C.H. Chang, G.S. Herman, and J.F.  Conley, Jr., "Bipolar Memresistive Switching in Zinc-Tin-Oxide," 2012  Spring Meeting of the Materials Research Society, San Francisco, CA, April 2012,  1 pg. (Abstract)A.  Mason*, C.-C. Huang*, M.T. Koesdjojo*, N. Stephon*, V.T. Remcho, and J.F.  Conley, Jr., "Functionalization and Environmental Stabilization of ZnO  Nanobridge Sensors for Liquid and Vapor Phase Sensing using Parylene-A,"  Nano Today 2011 Conference, Waikoloa Beach, HI, Dec. 2011.G. Herman, J. Rajachidambaram*, M. Rajachidambaram*, S.-Y.  Han, C.-H. Chang, S. Murali,* and J. Conley, "Transparent Oxide Semiconductors:  Recent Material Developments and New Applications," presented at the IEEE  Photonics 2011 Conference, Arlington, VA, Oct. 2011, G.S. Herman, J.S. Rajachidambaram*, S. Murali*, J. Conley,  S.P. Sanghavi, P. Nachimuthu, V. Shutthanandan, T. Varga, and S. Thevuthasan,  "Application of Amorphous Zinc Tin Oxide for Memristor Devices,"  presented at the AVS 58th Annual International Symposium and Exhibition, Nashville,  TN, October 30, 2011.N. Alimardani*, E.W. Cowell III*, J.F. Wager, and J.F.  Conley, Jr., "Investigation of Dual Dielectric Stacks on  Metal-Insulator-Metal (MIM) Tunnel Diode Operation," presented at the  American Vacuum Society (AVS) 11th International Conference on Atomic Layer  Deposition, Boston, MA, July 2011, 1 pg. (Abstract)S.W. Smith* and J.F. Conley, Jr., "Nucleation  laminate: A method for measuring few-cycle growth in multicomponent ALD systems  with substrate inhibited growth effects," presented at the American Vacuum  Society (AVS) 11th International Conference on Atomic Layer Deposition, Boston,  MA, July 2011, 1 pg. (Abstract)A.D.  Mason*, C.-C. Huang*, C. Heist*, M. T. Koesdjojo*, N. Stephon*, V.T. Remcho,  and J. F. Conley, Jr., "Environmental  Stabilization and Functionalization of ZnO Nanobridge Sensors Fabricated using  Carbonized Photoresist," presented at the Minerals, Metals, and  Materials Society (TMS) 53nd Electronic Materials Conference, Santa  Barbara, CA, June 2011. (O) 2 pgs. (Abstract)N.  Alimardani*, E. W. Cowell III*, J.F. Wager, and J.F. Conley, Jr.,  "Investigation of Electrode Roughness and High-k Dielectric Barrier on  Metal-Insulator-Metal Tunnel Diode Operation," presented at the Minerals,  Metals, and Materials Society (TMS) 53nd Electronic Materials  Conference, Santa Barbara, CA, June 2011. (O) 2 pgs. (Abstract)N.  Bauer*, M. Wang*, S.W. Smith*, J.C. Mitchell, and J.F. Conley, Jr., "Nanomechanical Characterization of Atomic Layer  Deposition Coatings for Biomedical Applications," presented at the  38th International Conference on Metallurgical Coatings and Thin  Films, San Diego, CA, May 2011. 1 pg. (Abstract)A.D. Mason*, C.-C. Huang*, S. Kondo*, M. T. Koesdjojo*, N.  Stephon*, V.T. Remcho, and J. F. Conley, Jr., "Functionalization and  Environmental Stabilization of ZnO Nanobridge Sensors Fabricated using  Carbonized Photoresist," 2011 Spring Meeting of the Materials Research  Society, San Francisco, CA, April 2011, 1 pg. (Abstract)G.R  Werner*, S.W. Smith*, J.F. Conley, Jr., J.C Mitchell, "Atomic Layer  Deposition Coated Orthodontic Archwires to Reduce  Coefficient-of-Friction," presented at the 40th Annual Meeting  of the American Association for Dental Research (AADR), San Diego, CA, March  2011. (O) 1 pg. (Abstract)T.  Waggoner*, J. Triska*, K. Hoshino*, J.F. Wager, and J.F. Conley, Jr.  "Zirconium Aluminum Oxide Nanolaminate Gate Dielectric for Amorphous Oxide  Semiconductor Thin Film Transistors," 38th Conference on the Physics and  Chemistry of Surfaces and Interfaces (PCSI-38), Jan. 2011, 3 pgs. (Extended  abstract)T.W.  Waggoner*, J.T. Triska*, J.F. Conley, Jr., K. Hoshino*, R. Presley, and J.F.  Wager, "Zinc-Tin-Oxide Thin-Film-Transistors with Al2O3  and ZrO2 Gate Dielectrics," presented at the Minerals, Metals,  and Materials Society (TMS) 52nd Electronic Materials Conference,  South Bend, IN, June 2010. (O) 2 pgs. (Abstract)A.  Mason*, C.C. Huang*, J.F. Conley, Jr., M. Koesdjojo*, S. Kondo*, and V. Remcho,  "Protection of ZnO Nanowires for Liquid-Phase Sensing," presented at  the Minerals, Metals, and Materials Society (TMS) 52nd Electronic  Materials Conference, South Bend, IN, June 2010. (O) 2 pgs. (Abstract)G.L.  Smith, R.G. Polcawich, J.S. Pulskamp, T. Waggoner*, and J.F. Conley, Jr.,  "Atomic Layer Deposited Alumina for use as an Etch Barrier Against Xenon  Difluoride Etching," Hilton Head 2010: Solid State Sensors, Actuators, and  Microsystems Workshop," Hilton Head, SC, June 2010, 2 pgs. (42%)I.  Jewell*, C.-C. Huang*, S. Smith*, A. Mason*, A. Jander, and J.F. Conley, Jr.,  "In-situ Resistive Measurements of Graphite Oxide Reduction for  Spin-Transport Based Devices," Spring meeting of the Materials Research  Society, San Francisco, CA, April, 2010.S.  Azimi*, S.W. Smith*, J.F. Conley, Jr., J.C. Mitchell, "Nanomechanical Testing of ALD Coatings for  Dental and Orthopaedic Applications," presented at the 39th  Annual Meeting of the American Association for Dental Research, Washington, DC,  March 2010. (O) 1 pg. (Abstract)T. Waggoner* and J.F.  Conley, Jr., "Resistive Switching in Atomic Layer Deposited ZnO and TiO2  Films,"2010 March Meeting of  The American Physical Society (APS), Portland, OR, Mar. 2010, Vol. 55, 1 pg.  (Abstract)I. Jewell*, C.-C. Huang*, S.W. Smith*, A. Mason*, A. Jander, and J.F. Conley, Jr., "In-situ Resistive Measurements of Graphite  Oxide Reduction for Spin-Transport Based Devices,"2010 March Meeting of The American  Physical Society (APS), Portland, OR, Mar. 2010, 1 pg. (Abstract)S. Murali*, V. Ng*, C.-C. Huang*, and J.F.  Conley, Jr., "Dielectrophoretic Alignment of ZnO Nanowires,"2010 March Meeting of The American  Physical Society (APS), Portland, OR, Mar. 2010, 1 pg. (Abstract)N. Alimardani*, J.F.  Conley, Jr., S. Kilpatrick, and M. Dubey, "Atomic Layer Deposited Ta2O5/Al2O3,  ZrO2/Al2O3 and ZrO2/Ta2O5  as Dual Dielectric MIIM Diodes for Rectenna Applications," 2010 March  Meeting of The American Physical Society (APS), Portland, OR, Mar. 2010, 1 pg.  (Abstract)S.W. Smith* and J.F.  Conley, Jr.,"Atomic Layer Deposited Aluminum Oxide / Tantalum Oxide  Laminate Films," 2010 March Meeting of The American Physical Society (APS),  Portland, OR, Mar. 2010, 1 pg. (Abstract)A. Mason*,  C.-C. Huang*,  B. Pelatt*, and J.F. Conley, Jr.,  "Directed Growth of ZnO Nanobridge Sensors using Carbonized  Photoresist," 2010 March Meeting of The American Physical Society (APS),  Portland, OR, Mar. 2010, 1 pg. (Abstract)J.  Triska*, J.F. Conley, Jr., R. Presley, and J.F. Wager, "Bias Stability of  Zinc-Tin-Oxide Thin Film Transistors with Al2O3 Gate  Dielectrics," 37th Conference on the Physics and Chemistry of Surfaces and  Interfaces (PCSI-37), Jan. 2010, 3 pgs. (Extended abstract)[INVITED] S.W. Smith*, K.G. McAuliffe,*  and J.F. Conley, Jr., "Atomic Layer Deposited High-k Nanolaminate  Capacitors," Proceedings of the 14th US-Japan Seminar on  Dielectric and Piezoelectric Materials, pgs. 52-55 (2009).S.W.  Smith*, J.F. Conley, Jr, Kyle Malloy*, and J.C. Mitchell, "Atomic Layer  Deposition of Conformal Oxide Coatings on Stainless Steel,"  AVS 9th International Conference on Atomic  Layer Deposition, Monterey, CA, July 2009, 1 pg. (Abstract)C.  Zhan, P. Schuele, J. Conley, and J. Hartzell, "A Novel Crystallized  Silicon Thin Film Transistor Based Piezoresistive Cantilever Label-Free  Biosensor," American Vacuum Society 54th International  Symposium, Seattle, WA, Oct. 2007, 1 pg. (Abstract)J.M.  Green*, T. Gutu*, L. Dong, J. Jiao, J.F. Conley, Jr., and Y. Ono,  "Electron Microscopy Characterization of Al2O3 and  ZnO Coated Carbon Nanotubes,"   Micro-Nano Breakthrough Conference, Vancouver, WA, June 2006, 1 pg.  (Abstract)J.F.  Conley, Jr., J.M. Green*, L. Dong*, J. Jiao, and Y. Ono, "Field Emission  Induced UV Electroluminescence from Atomic Layer Deposition ZnO Coated Carbon  Nanotubes,"  Electronic Materials  Conference, State College, PA, June 2006, 1 pg. (Abstract)J.M.  Green*, T. Gutu*, L. Dong, J. Jiao, J.F. Conley, Jr., and Y. Ono,  "Enhanced Field Emission and Morphology of Atomic Layer Deposition ZnO  Coated Carbon Nanotubes,"  2006  Spring Meeting of the Materials Research Society, San Francisco, CA, April  2006, 1 pg. (Abstract)J.T. Ryan*, P.M. Lenahan, A.Y. Kang*,  J.F. Conley, Jr., G. Bersuker, P. Lysaght, "Identification of the atomic  scale defects involved in radiation damage in HfO2 based MOS  devices,"  IEEE Nuclear and  Space Radiation Effects Conference (NSREC), Seattle, WA, July 2005, 1 pg.  (Abstract)J.T.  Ryan*, P.M. Lenahan, T.G. Pribicko*, G. Bersuker, P. Lysaght, J. Barnett, J.  Conley, "Electron Paramagnetic Resonance Studies of Hafnium Oxide MOS  Structures,"  Electronic Materials  Conference, Santa Barbara, CA, June 2005, 1 pg. (Abstract)J.F.  Conley, Jr., Y. Ono, and L. Stecker, "Directed Assembly of ZnO Nanobridges  on a Si Substrate using a ZnO Seed Layer,"   Electronic Materials Conference, Santa Barbara, CA, June 2005, 1 pg.  (Abstract)J.T.  Ryan*, J.P. Campbell*, T.G. Pribicko*, P.M. Lenahan, J.F. Conley and W. Tsai,  "Paramagnetic Centers in Hafnium Oxide Films on Silicon," Advanced  Gate Dielectric Stacks on High-Mobility Semiconductors Session, 2005 Spring  Meeting of the Materials Research Society, San Francisco, CA, March 2005, 1 pg.  (Abstract)J.F.  Conley, Jr., L. Stecker, and Y. Ono, "Growth of ZnO Nanowires Selectively  on a Si Substrate without a Metal Catalyst," Chemistry of Nanomaterial  Synthesis and Processing at the 2005 Spring Meeting of the Materials Research  Society, San Francisco, CA, March 2005, 1 pg. (Abstract)J.  Ryan*, J. Campbell*, T. Pribicko*, P. Lenahan, J. Conley, and W. Tsai,  "Paramagnetic Centers in Hafnium Oxide Films on Silicon," March 2005 Meeting of The American Physical Society (APS),  Portland, OR, Mar. 2005, Bulletin of the American Physical Society, W14.7, 1  pg. (Abstract)H.G.  McWhinney, J.F. Conley, T.N. Fogarty, L. Trombetta, R. Wilkins, T. L.Grady, M.  Bibbs, and R. Dwevedi, "Characterization of Hafnium Oxide Films on Silicon  Using X-Ray Photoelectron Spectroscopy," Pittsburgh Conference and  Exposition on Analytical Chemistry and Applied Spectroscopy, Orlando, FL,  Feb./Mar. 2005, 1 pg. (Abstract)M.  Dautrich*, P.M. Lenahan, J.F. Conley, Jr., and A.Y. Kang, "Non-Invasive  Nature of Corona Charging on Thermal Si/SiO2 Structures; an Electron Spin  Resonance Study," 34th IEEE Semiconductor Interface Specialists Conference  (SISC) Abstracts, December 2003, 2 pgs. (Extended abstract)A.Y.  Kang*, P.M. Lenahan, J.F. Conley, Jr., and Y. Ono, "Physical Structure of  Trapped Electrons in Atomic Layer Deposited Hafnium Oxide using Hf(NO3)4  Precursor," IEEE Semiconductor Interface Specialists Conference (SISC)  Abstracts, San Diego, CA, December 2003, 2 pgs. (Extended abstract)J.F.  Conley, Jr., Y. Ono, R. Solanki, Douglas Tweet, G. Stecker, and W.W. Zhuang,  "Alternating Pulse Deposition of Metal Oxide Thin Films using Hf(NO3)4  as both a Metal and an Oxygen Source,"   2003 AVS Topical Conference on Atomic Layer Deposition, San Jose, CA,  July 2003, 1 pg. (Abstract)A.Y.  Kang*, P.M. Lenahan, and J.F. Conley, Jr., "Charge trapping in atomic  layer deposited hafnium oxide on silicon,"   2003 TMS Electronic Materials Conference (EMC), Salt Lake City, UT, June  2003, 1 pg. (Abstract)A.Y.  Kang*, P.M. Lenahan, and J.F. Conley, Jr., "The Interface of HfO2/Si  Deposited via ALD using Hf(NO3)4 Precursor," 33rd  IEEE Semiconductor Interface Specialists Conference (SISC) December 2002, 2  pgs. (Extended abstract)P.M.  Lenahan, A.Y. Kang*, and J.F. Conley, Jr., "Reliability Problems in a  High-k Dielectric System:  HfO2/Si,"  2002 IEEE Microelectronics Reliability and  Qualification Workshop (MRQW), Manhattan Beach, CA, December 2002, 2 pgs.  (Extended abstract)J.F.  Conley, Jr., R. Solanki, G. Stecker, L. Charneski, W. Zhuang, D. Tweet, L.  Stecker, W. Gao, and Y. Ono, "ALD of HfO2 on a New Modulated  Temperature Tool using Hf(NO3)4,"  2002 AVS Topical Conference on Atomic Layer  Deposition, Seoul, Korea, August 2002, 1 pg. (Abstract)A.Y.  Kang*, P.M. Lenahan, and J.F. Conley, Jr., "Identification of Paramagnetic  Defects at the Hafnium/Silicon Interface"   Rocky Mountain Conference on Analytical Chemistry, Denver, CO, July 2002,  1 pg. (Abstract)A.Y.  Kang*, P.M. Lenahan, and J.F. Conley, Jr., "The Radiation Response of the  High Dielectric Constant Hafnium Oxide / Silicon System,"  IEEE Nuclear and Space Radiation Effects  Conference (NSREC), Phoenix, AZ, July 2002, 1 paragraph. (Abstract)A.Y.  Kang*, P.M. Lenahan, and J.F. Conley, Jr., "An Electron Spin Resonance  Observation of Hafnium Oxide Films for Advanced Gate Dielectrics,"  Electronic Materials Conference (EMC), Santa  Barbara, CA, June 2002, 1 pg. (Abstract)W.  Zhuang, J.F. Conley, Jr., Y. Ono, D.R. Evans, and R. Solanki, "Hafnium  Nitrate Precursor Synthesis and Hafnium Oxide Thin Film Properties,"  14th International Symposium on  Ferroelectrics, Nara, Japan, May 2002, 1 pg. (Abstract)J.F.  Conley, Jr., J.S. Suehle, A.H. Johnston, B. Wang*, T. Miyahara, and E.M. Vogel,  "Heavy Ion Induced Soft Breakdown of Thin Gate Oxides,"  IEEE Nuclear and Space  Radiation Effects Conference (NSREC), Vancouver, B.C., July 2001, 1 pg.  (Abstract) – Nominated for Best Paper.A.  Vandooren, J.F. Conley, Jr., S. Cristoloveanu, M. Mojarradi, E. Kolowa,  "Degradation Mechanisms in SOI n-channel LDMOSFETs,"  22nd Insulating Films on  Semiconductors (INFOS), Italy, Spring 2001, 2 pgs. (Extended abstract)J.S.  Suehle, T. Meyers, and J.F. Conley, Jr., “The Effects of Ionizing Radiation on  Wear-Out and Reliability of Thin Gate Oxides,”   2000 IEEE Microelectronics and Reliability and Qualification Workshop,  Glendale, CA, November 2000, 2 pgs. (Abstract)C.J.  Nicklaw*, M.P. Pagey, S.T. Pantelides, D.M. Fleetwood, R.D. Schrimpf, K.F.  Galloway, J.E. Wittig, B.M. Howard, E. Taw, W. H. McNeil, and J.F. Conley, Jr.,  "Defects and Nanocrystals Generated by Si Implantation into a-SiO2,"  IEEE Nuclear and Space Radiation Effects  Conference (NSREC), Reno, NV, July 2000, 1 pg. (Abstract)J.F.  Conley, Jr, C.J. Nicklaw, and E. Taw, "Investigation of Implant and Anneal  Modified Thermally Grown SiO2," 42nd Electronic  Materials Conference (EMC), Denver, CO, June 2000, 1 pg. (Abstract)P.M.  Lenahan, J.J. Mele, J.F. Conley, Jr., R.K. Lowry, and D. Woodbury,  "Predicting Radiation Response from Process Parameters:  Verification of a Physically Based Predictive  Model,"  IEEE Nuclear and Space  Radiation Effects Conference (NSREC), Norfolk, VA, July 1999, 1 pg. (Abstract)J.F.  Conley, Jr. and P.M. Lenahan, "Physically Based Predictive Model for  Radiation Hard MOS Devices," presented by P.M. Lenahan at the 1999  NASA/JPL Conference on Electronics for Extreme Environments," Pasadena,  CA, February 1999, 2 pgs.J.F.  Conley, Jr., W.F. McArthur, and P.M. Lenahan, "A Preliminary Investigation  of the Kinetics of Post-Oxidation Anneal Induced E' Precursor Formation,"  presented at the 29th IEEE Semiconductor Interface Specialists  Conference (SISC) Abstracts, December 1998, 2 pgs. (Extended abstract)P.M.  Lenahan and J.F. Conley, Jr., "A Physically Based Predictive Model for the  Generation of Paramagnetic Centers at the Si/SiO2 Boundary of MOS  Transistors,"  40th Rocky Mountain  Conference on Analytical Chemistry, Denver, CO, July 1998, 1 pg. (Abstract)P.M.  Lenahan and J.F. Conley, Jr., "A Comprehensive Physically Based Model for  Radiation Damage in MOS Systems,"   IEEE Nuclear and Space Radiation Effects Conference (NSREC), Newport  Beach, CA, July 1998, 1 pg. (Abstract) – Nominated for Best Paper.P.M.  Lenahan and J.F. Conley, Jr., "A Physically Based Predictive Model for  Generation of Interface Traps at the Si/SiO2 Boundary,"  March Meeting of the American Physical  Society, Los Angeles, CA, March 1998, Bulletin of the American Physical Society  43(1), Q23.10, pg. 639 (Abstract)P.M.  Lenahan and J.F. Conley, Jr., "A Process Dependent Predictive Model of  Charge Trapping in the SiO2 Bulk,"  39th Rocky Mountain Conference on Analytical  Chemistry, Denver, CO, July 1997, 1 pg. (Abstract)J.F.  Conley, Jr., P.M. Lenahan, B.D. Wallace, and P. Cole, "Quantitative Model  of Radiation Induced SiO2 Charge Trapping,"  IEEE Nuclear and Space Radiation Effects  Conference (NSREC), Snowmass Village, CO, July 1997, 1 pg. (Abstract)J.F.  Conley, Jr., P.M. Lenahan, and B.D. Wallace, "Electron Spin Resonance  Characterization of Trapping Centers in Unibond Buried Oxides,"  IEEE Nuclear and Space Radiation Effects  Conference (NSREC), Indian Wells, CA, July 1996, 1 pg. (Abstract)J.F.  Conley, Jr., P.M. Lenahan, A.J. Lelis, and T.R. Oldham, “Electron Spin  Resonance Evidence that E’g Centers Can  Behave as Switching Oxide Traps,”  IEEE  Nuclear and Space Radiation Effects Conference (NSREC), Madison, WI, July 1995,  1 pg. (Abstract)J.F.  Conley, Jr. and P.M. Lenahan, "H2 Interactions with EP  Centers:  Implications for EP  Structure,"  Spring Meeting of the  Materials Research Society, San Francisco, CA, April 1995, 1 pg. (Abstract)J.F.  Conley, Jr. and P.M. Lenahan, "Predicting Radiation Hardness from Process  Parameters:  A 'First-Principles' Model  of Oxide Charging,"  Virtual Wafer  Fabrication Session, Hardened Electronics and Radiation Technology (HEART)  Conference, Arlington, VA, March 1998. (O)   (Classified)J.F.  Conley, Jr., P.M. Lenahan, A.J. Lelis, and T.R. Oldham, “Electron Spin  Resonance Evidence for the Structure of a Switching Oxide Trap,” IEEE  Semiconductor Interface Specialists Conference (SISC) Abstracts, December 1995,  2 pgs. (Extended abstract)J.F.  Conley, Jr. and P.M. Lenahan, “Implications for the Structure of a Radiation  Damage Center in Thermally Grown Gate and SIMOX Buried Oxides,”  IEEE Nuclear and Space Radiation Effects  Conference (NSREC), Madison, WI, July 1995, 1 pg. (Abstract)J.F.  Conley, Jr. and P.M. Lenahan, "Hydrogen Complexed EP Centers and EP/H2  Interactions:  Implications for EP  Structure,"  Insulating Films on  Semiconductors (INFOS) Conference, Grenoble, France, June 1995, 2 pgs.  (Extended abstract)J.F.  Conley, Jr., P.M. Lenahan, R.K. Lowry, H.L. Evans, and T.J. Morthorst,  "Electron Spin Resonance Detection of a New Hole Trapping Defect in Thin  Film Thermally Grown SiO2 on Si," IEEE Semiconductor Interface  Specialists Conference (SISC), December 1994, 2 pgs. (Extended abstract)R.K.  Lowry, H.L. Evans, W.L. Schultz, T.J. Morthorst, P.M. Lenahan, and J.F. Conley,  Jr., "Electron Spin Resonance Characterization of Electrically Active  Oxide Defects," presented by R.K. Lowry at the 20th International  Symposium for Testing and Failure Analysis (ISTFA), Los Angeles, CA, November,  1994, 2 pgs. (Extended abstract)J.F.  Conley, Jr., P.M. Lenahan, R.K. Lowry, H.L. Evans, and T.J. Morthorst,  "Characterization of Two E' Center Charge Traps in Conventionally Grown  Thermal SiO2 on Si,"   24th European Solid State Device Research Conference (ESSDERC),  Edinburgh, Scotland, September 1994, 2 pgs. (Extended abstract)J.F.  Conley, Jr., P.M. Lenahan, R.K. Lowry, H.L. Evans, and T.J. Morthorst,  "ESR Study of Three E' Variants in Microelectronic Quality Thin Film  Thermal SiO2 on Si," presented by P.M. Lenahan at the 36th  Rocky Mountain Conference on Analytical Chemistry, Denver, CO, August 1994, 1  pg. (Abstract)J.F.  Conley, Jr., P.M. Lenahan, R.K. Lowry, H.L. Evans, and T.J. Morthorst,  "Characterization of Several E' Center Charge Traps in Conventionally  Grown Thermal SiO2 on Si,"   IEEE Nuclear and Space Radiation Effects Conference (NSREC), Tucson, AZ,  July 1994, 1 pg. (Abstract)J.F.  Conley, Jr., P.M. Lenahan, R.K. Lowry, H.L. Evans, and T.J. Morthorst,  "Multiple E' Like Defects in Thermal Thin Film SiO2:  Additional Complications to the Oxide Charge  Trapping Picture,"  March Meeting of  the American Physical Society, Pittsburgh, PA, March 1994, Bulletin of the American  Physical Society 39, 1 pg. (Abstract)J.F.  Conley, Jr., P.M. Lenahan, R.K. Lowry, H.L. Evans, and T.J. Morthorst,  "Evidence for "New" E' Defects in VUV Irradiated Thermally Grown  SiO2," IEEE Semiconductor Interface Specialists Conference  (SISC), December 1993, 2 pgs.J.F.  Conley, Jr. and P.M. Lenahan, "Molecular Hydrogen, E' Center Hole Traps,  and Radiation Induced Interface Traps in MOS Devices,"  IEEE Nuclear and Space Radiation Effects  Conference (NSREC), Snowbird, Utah, July 1993, 1 pg. (Abstract)J.F.  Conley, Jr. and P.M. Lenahan, "Radiation Induced Interface States and ESR  Evidence for Room Temperature Interactions Between Molecular Hydrogen and  Silicon Dangling Bonds in Amorphous SiO2 Films on Si,"  Insulating Films on Semiconductors (INFOS)  Conference, Delft, The Netherlands, June 1993, 2 pgs. (Extended abstract)J.F.  Conley, Jr. and P.M. Lenahan, "Molecular Hydrogen, E' Centers, and Pb  Centers in Thin Amorphous Silicon Dioxide Films on Silicon,"  35th Rocky Mountain Conference on Analytical  Chemistry, Denver, CO, July 1993, 1 pg. (Abstract)J.F.  Conley, Jr. and P.M. Lenahan, "ESR Study Linking H2 and E' Hole  Trapping Centers in SiO2 Thin Films on Si," presented by P.M.  Lenahan at the March Meeting of the American Physical Society, Seattle, WA,  March 1993, Bulletin of the American Physical Society 38(3), 1 pg. (Abstract)J.F.  Conley, Jr. and P.M. Lenahan, "ESR and Room Temperature Hydrogen  Interaction with Radiation Induced E' Centers," IEEE Semiconductor  Interface Specialists Conference (SISC) Abstracts, December 1992, 2 pgs.J.F.  Conley, Jr., P.M. Lenahan, and P. Roitman, "Evidence for a Deep Electron  Trap and Charge Compensation in Separation by Implanted Oxygen  Oxides,"  IEEE Nuclear and Space  Radiation Effects Conference (NSREC), New Orleans, LA, July 1992, 1 pg.  (Abstract)J.F.  Conley and P.M. Lenahan, "Room Temperature Reactions Involving Silicon  Dangling Bond Centers and Molecular Hydrogen in Amorphous SiO2 Thin  Films on Silicon,"  IEEE Nuclear and  Space Radiation Effects Conference (NSREC), New Orleans, LA, July 1992, 1 pg.  (Abstract)J.F.  Conley and P.M. Lenahan, "An ESR Study of Trapping Centers and Charge  Trapping Induced Structural Change in Separation by Implanted Oxygen Buried  Oxides,"  6th International  Symposium on Magnetic Resonance in Colloid and Interface Science, Florence,  Italy, June 1992, 2 pgs. J.F.  Conley, P.M. Lenahan, and P. Roitman, "ESR Study of SIMOX Charge  Trapping,"  Spring Meeting of the  Materials Research Society, San Francisco, CA, April 1992, 1 pg. (Abstract)J.F.  Conley, P.M. Lenahan, and P. Roitman, "Hole Trapping Centers in SIMOX  Buried Oxides," IEEE Semiconductor Interface Specialists Conference  (SISC), December 1991, 2 pgs. (Extended abstract)J.F.  Conley and P.M. Lenahan, Electron Spin Resonance Study Comparing E' Trapping  Centers in SIMOX and Thermal Oxides,"   Rocky Mountain Conference on Analytical Chemistry, Denver, CO, July 1991,  1 pg. (Abstract)J.F.  Conley, P.M. Lenahan, and P. Roitman, "Electron Spin Resonance Study of E'  Trapping Centers in SIMOX Buried Oxides,"   IEEE Nuclear and Space Radiation Effects Conference (NSREC), San Diego,  CA, July 1991, 1 pg. (Abstract)J.F.  Conley, P.M. Lenahan, and P. Roitman, "Electron Spin Resonance Study of  Trapping Centers in SIMOX Buried Oxides," Insulating Films on  Semiconductors (INFOS) Conference, Liverpool, England, April 1991, 2 pgs. (Extended  abstract)J.F.  Conley, P.M. Lenahan, and P. Roitman, "E' Centers and Hole Trapping in  SIMOX Buried Oxides," March Meeting of the American Physical Society,  Cincinnati, OH, March 1991, Bulletin of the American Physical Society 36(3),  pg. 620. (Abstract) C2.1.  Presentations to Professional  Groups Invited Talks at  International and National Conferences 
        J.F. Conley Jr., "Reliability of  multi-insulator MIIM Devices," presented at the International Integrated  Reliability Workshop,  Lake Tahoe, CA,  Oct. 2015.J.F. Conley Jr., "Atomic Layer Deposition  of Dielectric Stacks for Metal/Insulator/Insulator/Metal Diodes," presented  at the 15th International Conference on Atomic Layer Deposition Conference (ALD  2015), Portland, OR, June. 2015.J.F. Conley Jr., "Fundamentals of Reliability and Instability  Issues in Amorphous Oxide Semiconductor TFTs,"  presented at the 13th  International Conference on Modern Materials and Technologies (CIMTEC),  Montecatini Terme, Italy, June 8-20, 2014.J.F. Conley Jr., "Enhancing  Performance of MIM and MIIM Tunnel Diodes," presented at the  Workshop on Dielectric in Microelectronics (WODIM), Kinsale, Cork, Ireland June  9-11, 2014. J.F. Conley Jr., "Resistive Switching in  Zinc-Tin-Oxide and Atomic Layer Deposition of Nanolaminates for Amorphous Oxide  Semiconductor Thin Film Transistors," presented at the 222nd  Meeting of the Electrochemical Society (ECS), Honolulu, HI, October 2012, 1 pg.  (Abstract).G.S. Herman, J.S. Rajachidambaram, M.S.  Rajachidambaram, S.-Y. Han, C.-H. Chang, S. Murali, J.F. Conley, Jr.,  "Transparent Oxide Semiconductors: Recent Material Developments and New  Applications," 2011 IEEE Photonics Conference,  Arlington, VA October, 2011.G.S. Herman, J.S.  Rajachidambaram*, S. Murali*, J. Conley, S.P. Sanghavi, P. Nachimuthu, V.  Shutthanandan, T. Varga, and S. Thevuthasan, "Application of Amorphous  Zinc Tin Oxide for Memristor Devices," presented at the AVS 58th Annual  International Symposium and Exhibition, October 30, 2011.J.F. Conley, Jr., "Atomic Layer Deposition  of High-k and Nanolaminate Dielectrics for Transparent Thin Film Transistors  and Metal/Insulator/Metal Tunnel Diodes," 219th Meeting of the  Electrochemical Society (ECS), Montreal, QC, May 2011.J.F. Conley, Jr., "Directed Growth and  Electrical Integration of ZnO Nanobridge Sensors using Lithographically  Patterned Carbonized Photoresist," CMOS Emerging Technologies, Whistler,  BC, June 2011.J.F. Conley, Jr., "Growth, Integration, and  Application of "Greener" Nanowires", 5th Annual  Greener Nanoscience Conference, Portland, OR, June 2010.J.F. Conley, Jr., "Instabilities in Oxide  Semiconductor Transparent Thin Film Transistors," presented at the IEEE  International Integrated Reliability Workshop (IIRW), Lake Tahoe, CA, October  2009.S.W. Smith, K.G. McAuliffe, and J.F. Conley,  Jr., "Atomic Layer Deposited High-k Nanolaminate Capacitors," presented  at the 14th US-Japan Seminar on Dielectric and Piezoelectric Materials, Welches,  OR, October 2009. J.F. Conley, Jr., R.J. Milanowski, H. Walker, M.  Pagey, W. McArthur, and C.J. Nicklaw, "Electron Spin Resonance  Characterization of Defects for Oxide Model Development and Verification,"  Fall Meeting of the Materials Research Society, Boston, MA, December 1997.P.M. Lenahan, J.F. Conley, Jr., and B.D.  Wallace, "Demonstration of a Physically Based Predictive Model for Oxide  Charging," presented at the Spring Meeting of the Electrochemical Society,  Montreal, Quebec, Canada, May 1997.J.F. Conley, Jr. and P.M. Lenahan, "A  Review of Electron Spin Resonance Spectroscopy of Defects in Thin Film SiO2  on Si," presented at the Spring Meeting of the Electrochemical Society,  Los Angeles, CA, May 1996.P.M. Lenahan and J.F. Conley, Jr.,  "Radiation Damage in Metal Oxide Silicon Devices:  Fundamental Understanding Developed Through  Magnetic Resonance," presented at the IEEE Radiation Studies Conference  (RADSCON 96), Prairie View, TX, April 1996. J.F.  Conley, Jr., "Application of Electron Spin Resonance as a Tool for  Building in Reliability," presented at the Spring Meeting of the Materials  Research Society, San Francisco, CA, April 1996. Invited Short Courses at International Conferences 
        J.F. Conley, Jr., "High-k dielectrics:  Materials Physics, Instabilities, Defects, and Reliability," IEEE International  Integrated Reliability Workshop 2004 Tutorial Handout (23 pages).J.F. Conley, Jr., "Deposition and Defect  Characterization of High-k Material," in the IEEE International  Reliability Physics Symposium (IRPS) 2004 Reliability Physics Tutorial Notes,  Topic 133, pg. 133.1-133.36. Invited Talks at Universities and Institutions 
        Portland  State University, Department of Physics, June 2015.The  Pennsylvania State University, Department of Engineering Science and Mechanics,  State College, PA, May 2015.Oregon  State University, Department of Physics, "Asymmetric  Metal-Insulator-Insulator-Metal (MIIM) Tunnel Diodes and Zinc-Tin-Oxide  Memristors / Resistive Random Access Memory (RRAM)," October 2012.U.S.  Army Research Lab (ARL), Adelphi, MD, "Asymmetric  Metal-Insulator-Insulator-Metal (MIIM) Tunnel Diodes and Zinc-Tin-Oxide  Memristors / Resistive Random Access Memory (RRAM)," August 2012.National  Institute of Standards and Technology (NIST), Gaithersburg, MD, "Asymmetric  Metal-Insulator-Insulator-Metal (MIIM) Tunnel Diodes and Zinc-Tin-Oxide  Memristors / Resistive Random Access Memory (RRAM)," August 2012.University  of Oregon, Materials Science Institute, "Nanobridge Sensors, Atomic Layer  Deposited Nanolaminates, and Metal-Insulator-Metal Tunnel Diodes," April  2011.U.S.  Army Research Lab, Adelphi, MD, "Atomic Layer Deposition (ALD) of Thin  Films for MIM Tunnel Diodes and Novel Construction of ZnO Nanobridge Devices  for UV and Gas Sensing," December 2009.Michigan  Tech University, Houghton, MI, "High Surface Area Applications of Atomic  Layer Deposition (ALD)," Nov. 14, 2008.Pacific  Northwest National Laboratory, Richland, WA, "Electronic Materials  Research at OSU: Thin Films and Nanomaterials," June 25th, 2008.U.S.  Army Research Lab, Adelphi, MD, "Application of Atomic Layer Deposition  (ALD) for Surface Modification and Directed Growth of Nanomaterials,"  December 2007.National  Institute of Standards and Technology (NIST), Gaithersburg, MD,  "Application of Atomic Layer Deposition (ALD) for Surface Modification and  Directed Growth of Nanomaterials," December 2007.Oregon  State University, Department of Physics, "Nanotechnology and OSU Research Plans," October 2007.Oregon  State University, Department of Materials Science, "Field Emission Induced UV Electroluminescence  of Atomic Layer Deposition ZnO Coated Carbon Nanotubes and Directed Integration  of ZnO Nanobridge Devices," October 2007.Montana  State University, "Field Emission  Induced UV Electroluminescence of Atomic Layer Deposition ZnO Coated Carbon  Nanotubes and Directed Integration of ZnO Nanobridge Devices,"  March 2007.Sharp  Labs of America, "Silicon Nanowires for Display Applications," June  2006Washington  State University, Dept. of Mechanical Engineering, "Materials Limited  Scaling of MOS Transistors: High-k Dielectrics and Nanotechnology," March  2004.The  Pennsylvania State University, Dept. of Engr. Sci. and Mech., "Materials  Limited Nano-scaling of MOS Devices: Development of a High-k Dielectric,"  March 2002.NASA Jet  Propulsion Laboratory,"Short Course on Space Radiation Effects on Microelectronics: Total Dose Effects,"  Pasadena, CA, Jan. 2001.Sharp  Laboratories of America, "Space Radiation Induced Damage in Commercial  Microelectronic Devices," Camas, WA, Nov. 2000.Bend  Research, "Space Radiation Induced Damage in Commercial Microelectronic  Devices," Bend, OR, Oct. 2000Intel,  "Space Radiation Induced Damage in Commercial Microelectronic  Devices," Beaverton, OR, Oct. 2000.NASA Jet  Propulsion Laboratory, "Development of Predictive Physics Based Defect Models  for Rad-Hard TCAD," Pasadena, CA, Jan. 2000.National  Semiconductor, "Predicting Radiation Hardness from Process Parameters: A  'First Principles' Model of Oxide Hole Trapping" San Jose, CA, 1999. Oregon  Graduate Institute, Dept. of Electrical Engineering, "Electron Spin  Resonance Identification of Electrically Active Defects in Microelectronics  Materials," August 1998.SPC  Global Technologies, "Consideration of Surface Preparation for Defect  Based Models of Gate Oxide Reliability," Boise, ID, Spring 1998.National  Institute of Standards and Technology, Ionizing Radiation Division,  "Predicting Radiation Hardness from Process Parameters: A 'First  Principles' Model of Oxide Hole Trapping," Gaithersburg, MD, March 1998.The  Pennsylvania State University, Dept. of Engr. Sci. and Mech., "Development  of Physics Based Predictive Models for Rad-Hard TCAD," April 1996.Arizona State  University, Dept. of Electrical Engineering, "Electron Spin Resonance  Identification of Bulk and Interface Trap Defects Defects in Amorphous SiO2  Thin Films," March 1996.Charles  Stark Draper Laboratory, "Electron Spin Resonance Identification of Bulk  and Interface Trap Defects Defects in Amorphous SiO2 Thin  Films," Boston, MA, 1996.Dynamics  Research Corporation, "Electron Spin Resonance Identification of Point  Defects in Amorphous SiO2 Thin Films," November 1995.Motorola  Advanced Products Research and Development Lab (APRDL), "Electron Spin  Resonance as a Tool for Building in Reliability (BIR)," Austin, TX,  September 1995. C4. Patents Filed and In ProcessISSUED 
        US  Patent #8,053,266, "Piezo-diode  cantilever MEMS fabrication method," C.Q. Zhan, P.J. Schuele, J.F.  Conley, Jr., and J. Hartzell, issued 11/8/11.US  Patent #7,763,947, "Piezo-diode  cantilever MEMS," C.Q. Zhan, P.J. Schuele, J.F. Conley, Jr., and J.  Hartzell, issued 7/27/10.US  Patent #7,597,757, "ZnO film with  C-axis orientation," J.F. Conley, Jr. and Y. Ono, issued 10/6/09.US  Patent #7,589,464, "Nanotip Electrode Electroluminescence Device with  Contoured Phosphor Layer", J.F. Conley, Jr., D.R. Evans, W. Gao, and Y.  Ono, issued 9/15/09.  US  Patent #7,528,695, " Method  to manipulate selectivity of a metal oxide sensor," J.F. Conley, Jr. and  Y. Ono, issued 5/5/09.US  Patent #7,473,640, "Reactive gate electrode conductive barrier," J.F.  Conley, Jr., Y. Ono, and W. Gao, issued 1/6/09.US  Patent #7,462,499, "Carbon nanotube with ZnO asperities," J.F.  Conley, Jr., Y. Ono, L. Stecker, S.T. Hsu, J.M. Green, L. Dong, J. Jiao, issued  12/9/08.  US  Patent #7,442,415, "Modulated temperature method of atomic layer  deposition (ALD) of high dielectric constant films," J.F. Conley, Jr., Y.  Ono, and G.M. Stecker, issued 10/28/08.US  Patent #7,309,621, "Method to fabricate a nanowire CHEMFET sensor device  using selective nanowire deposition," J.F. Conley, Jr., Y. Ono, and L.  Stecker, issued 12/18/07.US  Patent #7,303,631, " Selective growth of ZnO nanostructure using a  patterned ALD ZnO seed layer," J.F. Conley, Jr. and L. Stecker, issued  12/4/07.US Patent #7,208,768,  "Electroluminescent device," Y. Ono, W. Gao, J.F. Conley, Jr., O.  Nishio, and K. Sakiyama, issued 4/24/07.US Patent #7,199,029,  "Selective deposition of ZnO nanostructures on a silicon substrate using a  nickel catalyst and either patterned polysilicon or silicon surface modification,"  J.F. Conley, Jr, L.H. Stecker, and G.M. Stecker, issued 4/3/07.US Patent #7,192,802, "ALD  ZnO seed layer for deposition of ZnO nanostructures on a Si substrate," L.  Stecker, and J.F. Conley, Jr., issued 3/20/07.US Patent #7,160,819,  "Method to perform selective atomic layer deposition of zinc oxide."  J.F. Conley, Jr., Y. Ono, and D.R. Evans, issued 1/9/07.US Patent #7,053,009,  "Nanolaminate film atomic layer deposition method," J.F. Conley, Jr.,  Y. Ono, and R. Solanki, issued 5/30/06.US Patent #7,029,944,  "Methods of forming a microlens array over a substrate employing a CMP  stop," J.F. Conley, Jr., Y. Ono, W. Gao, and D.R. Evans, issued 4/18/06.US Patent #6,930,059,  "Method for depositing a nanolaminate film by atomic layer  deposition," J.F. Conley, Jr., Y. Ono, and R. Solanki, issued 8/16/05.US Patent #6,875,677,  "Method to control the interfacial layer for deposition of high dielectric  constant films," J.F. Conley, Jr. and Y. Ono, issued 4/5/05.US Patent #6,873,048,  "System and method for integrating multiple metal gates for CMOS  applications," W. Gao, J.F. Conley, Jr., and Y. Ono, issued 3/29/05.US Patent #6,686,212, "Method  to Deposit a Stacked High-k Gate Dielectric for CMOS Applications," J.F.  Conley, Jr., Y. Ono, and R. Solanki, issued 2/3/04. 9/15
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